Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, and Ninoslav Stojadinović “Implications of Negative Bias Temperature Instability in Power MOS Transistors” in “Micro Electronic and Mechanical Systems”, edited by Kenichi Takahata, IN-TECH Press, Boca Raton, pp. 19.319-19.342 (2009), ISBN 978-953-307-027-8, http://www.intechopen.com/books/show/title/micro-electronic-and-mechanical-systems
Ninoslav Stojadinović, Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Snežana Golubović, Zoran Prijić, “Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors” in “Bias Temperature Instability for Devices and Circuits”, Editors: Tibor Grasser, Springer New York, pp. 533-559 (2014), ISBN: 978-1-4614-7908-6 (Print) 978-1-4614-7909-3 (Online), DOI: 10.1007/978-1-4614-7909-3_20, p://link.springer.com/chapter/10.1007/978-1-4614-7909-3_20
Miloš Marjanović, Vesna Paunović, Danijel Danković, Aneta Prijić, Zoran Prijić, “Characterization and SPICE Modeling of Passive Electronic Devices at High Frequencies” in “Proceedings of the IV Advanced Ceramics and Application Conference”, Editors: Bill Lee, Rainer Gadow, Vojislav Mitic, Atlantis Press, pp. 435-446, ISBN: 978-94-6239-212-0, 978-94-6239-213-7 (eBook), https://www.springerprofessional.de/en/characterization-and-spice-modeling-of-passive-electronic-device/12002150
Danijel Danković, “Laboratorijski praktikum sa zadacima za samostalan rad iz predmeta komponente za telekomunikacije”, Univerzitet u Nišu, Elektronski fakultet u Nišu, Edicija: Pomoćni udžbenici, 2018. ISBN: 978-86-6125-202-0. (Odlukom Nastavno-naučnog veća Elektronskog fakulteta u Nišu broj 07/05-003/18-007 od 12.07.2018. godine rukopis je odobren kao pomoćni udžbenik na Elektronskom fakultetu)
Aneta Prijić, Danijel Danković, Zoran Prijić, „Uvod u poluprovodničke komponente i njihovu primenu“ - drugo, izmenjeno i dopunjeno izdanje, Edicija: Osnovni udžbenici, Univerzitet u Nišu, Elektronski fakultet, 2020, ISBN 978-86-6125-224-2. (Odlukom Nastavno-naučnog veća Elektronskog fakulteta u Nišu broj 07/05-007/20-005 od 16.07.2020. godine rukopis je odobren za publikovanje kao udžbenik na Elektronskom fakultetu)
Danijel Danković, “Laboratorijski praktikum sa zadacima za samostalan rad iz predmeta komponente za telekomunikacije, drugo, izmenjeno i dopunjeno izdanje”, Univerzitet u Nišu, Elektronski fakultet u Nišu, Edicija: Pomoćni udžbenici, 2021. ISBN: 978-86-6125-236-5. (Odlukom Nastavno-naučnog veća Elektronskog fakulteta u Nišu broj 07/05-012/21-010 od 13.07.2021. godine rukopis je odobren kao pomoćni udžbenik na Elektronskom fakultetu)
Nikola Mitrović, Danijel Danković, Zoran Prijić, “Laboratorijski praktikum sa zadacima za samostalan rad iz predmeta Analogna mikroelektronika”, Univerzitet u Nišu, Elektronski fakultet u Nišu, Edicija: Pomoćni udžbenici, 2022. ISBN: 978-86-6125-245-7. (Odlukom Nastavno-naučnog veća Elektronskog fakulteta u Nišu broj 07/05-007/22-009 od 12.05.2022. godine rukopis je odobren kao pomoćni udžbenik na Elektronskom fakultetu)
Nikola Mitrović, Miloš Marjanović, Danijel Danković, “Primena ARM mikrokontrolera”, Akademska misao Beograd, ISBN: 978-86-7466-951-8, 2023.
Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović and Sima Dimitrijev, “Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Microelectronics Reliability, vol. 42, pp. 1465-1468 (2002), ISSN 0026-2714, DOI: 10.1016/S0026-2714(02)00171-3, http://www.sciencedirect.com/science/article/pii/S0026271402001713
Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović and S. Dimitrijev, “Effects of electrical stressing in power VDMOSFETs”, Microelectronics Reliability, vol. 45, pp. 115-122 (2005), ISSN 0026-2714, DOI:10.1016/j.microrel.2004.09.002 , http://www.sciencedirect.com/science/article/pii/S0026271404003786
Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, and Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Microelectronics Reliability, vol. 45, pp. 1343-1348 (2005), ISSN 0026-2714, DOI: 10.1016/j.microrel.2005.07.018, http://www.sciencedirect.com/science/article/pii/S002627140500168X
Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Đorić-Veljković, Snežana Golubović, S. Dimitrijev, “Electrical Stressing Effects in Commercial Power VDMOSFETs”, IEE Proc. Circuits, Devices & Systems, vol. 153, no. 3, pp. 281-288 (2006), ISSN 1350-2409, DOI:10.1049/ip-cds:20050050
Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Microelectronics Reliability, vol. 46, pp. 1828-1833 (2006), ISSN 0026-2714, DOI:10.1016/j.microrel.2006.07.077, http://www.sciencedirect.com/science/article/pii/S0026271406002447
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Microelectronics Reliability, vol. 47, pp. 1400-1405 (2007), DOI:10.1016/j.microrel.2007.07.022, http://linkinghub.elsevier.com/retrieve/pii/S0026271407002910
Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs”, IET Circuits, Devices & Systems, vol. 2, no. 2, pp. 213-221 (2008), ISSN 1751-858X, DOI:10.1049/iet-cds:20070173, http://ieeexplore.ieee.org/Xplore/login.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F4123966%2F4490219%2F04490224.pdf%3Farnumber%3D4490224&authDecision=-203
Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković and S. Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese Journal of Applied Physics, vol. 47, pp. 6272-6276 (2008), ISSN 1347-4065 (online) 0021-4922 (print) DOI:10.1143/JJAP.47.6272, http://jjap.jsap.jp/link?JJAP/47/6272/
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Ninoslav Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, Microelectronics Reliability, vol. 48, pp. 1313-1317 (2008), ISSN 0026-2714, DOI:10.1016/j.microrel.2008.06.015, http://linkinghub.elsevier.com/retrieve/pii/S0026271408002023
Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “Effects of low gate bias annealinig in NBT stressed n-channel power VDMOSFETs”, Microelectronics Reliability, vol. 49, pp. 1003-1007 (2009), ISSN 0026-2714, DOI:10.1016/j.microrel.2009.07.010, http://linkinghub.elsevier.com/retrieve/pii/S0026271409002418
Ninoslav Stojadinović, Danijel Danković, Ivica Manić, A. Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Z. Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Microelectronics Reliability, vol. 50, pp. 1278-1282 (2010), ISSN 0026-2714, DOI:10.1016/j.microrel.2010.07.122, http://linkinghub.elsevier.com/retrieve/pii/S0026271410003951
Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, and Ninoslav Stojadinović, “Annealing of Radiation-Induced Defects in Burn-in Stressed Power VDMOSFETs”, Nuclear Technology & Radiation Protection, vol. 26, No. 1, pp. 18-24 (2011), ISSN 1451-3994, DOI: 10.2298/NTRP1101018D, http://ntrp.vinca.rs/2011_1/Djoric-Veljkovic2011_1.html
Ivica Manić, Danijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static under the static and pulsed NBT stress conditions”, Microelectronics Reliability, vol. 51, pp. 1540-1543 (2011), ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.06.004 http://www.sciencedirect.com/science/article/pii/S0026271411001946
Aneta Prijić, Danijel Danković, Ljubomir Vračar, Ivica Manić, Zoran Prijić and Ninoslav Stojadinović, “A method for negative bias instability (NBTI) measurements on power VDMOS transistors”, Measurement Science and Technology, vol.23, p. 8 (2012), ISSN 0957-0233 (Print), 1361-6501 (Online), DOI: 10.1088/0957-0233/23/8/085003, http://iopscience.iop.org/0957-0233/23/8/085003/
Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs”, Informacije MIDEM, Journal of Microlectronics, Electronic Components and Materials, vol. 43, no. 1, pp. 58-66 (2013), ISSN 0352-9045, UDK: 621.3:(53+54+621+66)(05)(497.1)=00, http://www.midem-drustvo.si/Journal%20papers/MIDEM_43%282013%291p58.pdf
Danijel Danković, Ljubomir Vračar, Aneta Prijić, and Zoran Prijić, “An Electromechanical Approach to a Printed Circuit Board Design Course”, IEEE Transaction on Education, vol. 56, no. 4, pp. 470-477 (2013), ISSN: 0018-9359, DOI: 10.1109/TE.2013.2257784, http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6507652
Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, and Ninoslav Stojadinović, “The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power VDMOSFET”, Nuclear Technology & Radiation Protection, vol. 28, No. 4, pp. 406-414 (2013), ISSN 1451-3994, UDC 621.039+614.876:504.06, DOI: 10.2298/NTRP1304406D, http://ntrp.vin.bg.ac.rs/2013_4/DjoricVeljkovic2013_4.htm
Ivica Manić, Danijel Danković, Aneta Prijić, Zoran Prijić, Ninoslav Stojadinović, “Measurement of NBTI Degradation in p-channel Power VDMOSFETs”, Informacije MIDEM, Journal of Microlectronics, Electronic Components and Materials, vol. 44, no. 4, pp. 280-287 (2014), ISSN 0352-9045, UDK: 621.3:(53+54+621+66), http://www.midem-drustvo.si/Journal%20papers/MIDEM_44%282014%294p280.pdf
Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović and Ninoslav Stojadinović, “Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors”, Japanese Journal of Applied Physics, vol. 54, no. 6, pp. 064101-1-064101-7 (2015), ISSN 1347-4065 (online) 0021-4922 (print) DOI:10.7567/JJAP.54.064101, http://iopscience.iop.org/article/10.7567/JJAP.54.064101/meta;jsessionid=DFF6F0F205410326914C50155654C1E1.c1.iopscience.cld.iop.org
Danijel Danković, Ivica Manić, Aneta Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Ninoslav Stojadinović, Zoran Prijić and Snežana Golubović, “Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation”, Semiconductor Science and Technology, vol. 30, No. 10, p. 105009 (9pp) (2015), ISSN 1361-6641, DOI: 10.1088/0268-1242/30/10/105009, http://iopscience.iop.org/article/10.1088/0268-1242/30/10/105009
Danijel Danković, Ninoslav Stojadinović, Zoran Prijić, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković and Snežana Golubović,“ Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET”, Chinese Physics B, vol. 24, no. 10, pp. 106601-1-106601-9 (2015), ISSN 1674-1056, DOI: 10.1088/1674-1056/24/10/106601, http://iopscience.iop.org/article/10.1088/1674-1056/24/10/106601
Vojkan Davidović, Danijel Danković, Aleksandar Ilić, Ivica Manić, Snežana Golubović, Snežana Djorić-Veljković, Zoran Prijić, Ninoslav Stojadinović, “NBT and irradiation effects in Negative bias temperature instability in p-channel power VDMOSFET ”, IEEE Transaction on Nuclear Science, vol. 63, no. 2, pp. 1268-1275 (2016), ISSN 0018-9499, DOI: 10.1109/TNS.2016.2533866, http://ieeexplore.ieee.org/document/7454831/
Danijel Danković, Ivica Manić, Vojkan Davidović, Aneta Prijić, Miloš Marjanović, Aleksandar Ilić, Zoran Prijić, Ninoslav Stojadinović, “ On the recoverable and permanent components of NBTI in p-channel power VDMOSFETs”, IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 522-531 (2016), ISSN 1530-4388, DOI: 10.1109/TDMR.2016.2598557, http://ieeexplore.ieee.org/document/7536114/
Vojkan Davidović, Danijel Danković, Aleksandar Ilić, Ivica Manić, Snežana Golubović, Snežana Djorić, Zoran Prijić, Aneta Prijić and Ninoslav Stojadinović, “ Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors”, Japanese Journal of Applied Physics, vol. 57, no. 4, pp. 044101-1-044101-10 (2018), ISSN 1347-4065 (online) 0021-4922 (print) DOI: 10.7567/jjap.57.044101, https://iopscience.iop.org/article/10.7567/JJAP.57.044101
Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Zoran Prijić, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Ninoslav Stojadinović, “A review of pulsed NBTI in P-channel power VDMOSFETs”, Microelectronics Realibaility, vol. 82, pp. 28-36 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.01.003, https://www.sciencedirect.com/science/article/pii/S0026271418300039
Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Srboljub Stanković, Aneta Prijić, Zoran Prijić, Ivica Manić, Danijel Danković, “ NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Microelectronics Realibaility, vol. 88-90, pp. 135-141 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.07.138, https://www.sciencedirect.com/science/article/pii/S0026271418307224
Danijel Danković, Nikola Mitrović, Zoran Prijić, Ninoslav Stojadinović, “Modeling of NBTS Effects in P-Channel Power VDMOSFETs”, IEEE Transactions on Device and Materials Reliability, vol. 20, no. 1, pp. 204-213 (2020), ISSN 1530-4388, DOI: 10.1109/TDMR.2020.2974131, https://ieeexplore.ieee.org/document/8999737?source=authoralert
Miloš Djordjević, Branislav Jovičić, Stefan Marković, Vesna Paunović, Danijel Danković, “A smart data logger system based on sensor and Internet of Things technology as part of the smart faculty”, Journal of Ambient Intelligence and Smart Environments, vol. 12, no. 4, pp. 359-373 (2020), ISSN 1876-1364 (P), ISSN 1876-1372 (E), DOI: 10.3233/AIS-200569, https://content.iospress.com/journals/journal-of-ambient-intelligence-and-smart-environments/12/4.
Nikola Mitrović, Danijel Danković, Branislav Ranđelović, Zoran Prijić, Ninoslav Stojadinović, “ Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method”, Informacije MIDEM, Journal of Microlectronics, Electronic Components and Materials, vol. 50, no. 3, pp. 205-214 (2020), ISSN 0352-9045, UDK: 621.3:(53+54+621+66), http://www.midem-drustvo.si/Journal%20papers/MIDEM_50(2020)3p205.pdf
Danijel Danković, Vojkan Davidović, Snežana Golubović, Sandra Veljković, Nikola Mitrović, Snežana Djorić-Veljković, “Radiation and Annealing Related Effects in NBT Stressed P-Channel Power VDMOSFETs”, Microelectronics Reliability, vol. 126, pp. 114273 (1-5) (2021), ISSN 0026-2714, DOI: 10.1016/j.microrel.2021.114273, https://www.sciencedirect.com/science/article/pii/S0026271421002390
Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Srboljub Stanković, Marko Andjelković, Zoran Prijić, Ivica Manić, Aneta Prijić, Goran Ristić, Danijel Danković “Response of Commercial p-Channel Power VDMOS Transistors to Irradiation and Bias Temperature Stress”, Journal of Circuits, Systems, and Computers, vol. 31, p. 2240003 (1-25) (2022), ISSN 0218-1266 (P), ISSN 1793-6454 (O), DOI: 10.1142/S0218126622400035, https://www.worldscientific.com/doi/10.1142/S0218126622400035
Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Emilija Živanović, Zoran Prijić, Danijel Danković, “Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications”, Microelectronics Reliability, vol. 138, p. 114634 (1-5) (2022), ISSN 0026-2714 (P), ISSN: 1872-941X (O), DOI: 10.1016/j.microrel.2022.114634, https://www.sciencedirect.com/science/article/pii/S0026271422001585
Danijel Danković, Miloš Marjanović, Nikola Mitrović, Emilija Živanović, Milan Danković, Aneta Prijić, and Zoran Prijić, “The Importance of Students’ Practical Work in High Schools for Higher Education in Electronic Engineering”, IEEE Transaction on Education, vol. 66, no. 4, pp. 146-155 (2022), ISSN 0018-9359 (P), ISSN 1557-9638 (O), DOI: 10.1109/TE.2022.3202629, https://ieeexplore.ieee.org/document/9891805
Sandra Veljković, Nikola Mitrović, Igor Jovanović, Emilija Živanović, Albena Paskaleva, Dencho Spassov, Dragan Mančić, Danijel Danković, “Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications”, Microelectronics Reliability, vol. XXX, p. XXXXXX (1-5) (2023), ISSN 0026-2714 (P), ISSN: 1872-941X (O), accepted manuscript.
Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Effects of Gate Bias Stressing in Power VDMOSFETs”, Serbian Journal of Electrical Engineering, vol. 1, pp. 89-101 (2003), ISSN 1451-4869 (Print), 2217-7183 (Online), DOI: 10.2298/SJEE0301089S, http://www.journal.ftn.kg.ac.rs/Vol_1-1/Vol_1-1.htm.
Danijel Danković, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “Lifetime estimation in NBT-stressed p-channel power VDMOSFETs”, Facta Universitatis, Series: Automatic control and Robotics, vol. 11, no. 1 pp. 15-23 (2012), ISSN 1820-6417 (Print), 1820-6425 (Online), UDK: 621.3.049.77 621.3.019.3 621.382.323, http://facta.junis.ni.ac.rs/acar/acar201201/acar20120102.pdf
Miloš Marjanović, Danijel Danković, Aneta Prijić, Zoran Prijić, Nebojša Janković, Vojkan Davidović “Modeling and PSPICE Simulation of NBTI Effects in VDMOS Transistors”, Serbian Journal of Electrical Engineering, vol. 12, no. 1, pp. 69-79 (2015), ISSN 1451-4869 (Print), 2217-7183 (Online), DOI: 10.2298/SJEE1501069M http://www.journal.ftn.kg.ac.rs/Vol_12-1/
Aneta Prijić, Ljubomir Vračar, Dušan Vučković, Danijel Danković and Zoran Prijić, “Practical Aspects of Cellular M2M Systems Design”, Facta Universitatis, Series: Electronics and Energetics, vol. 28, no. 4 pp. 541-556 (2015), ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1504541P http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/986/693
Miloš Marjanović, Danijel Danković, Vojkan Davidović, Aneta Prijić, Ninoslav Stojadinović, Z. Prijić, N. Janković,“Modeling and PSPICE simulation of radiation stress influence shifts in p-channel power VDMOS transistors”, Radiation & Applications in Physics, Chemistry, Bilogy, Medical Sciences, Engineering and Environmental Sciences, vol. 1, no. 1, pp. 26-30 (2016), ISSN 2466-4294, DOI: 10.21175/RadJ.2016.01.05, http://www.rad-journal.org/paper.php?id=5
Ivica Manić, Danijel Danković, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, and Ninoslav Stojadinović, “Effects of Pulsed Negative Bias Temperature Stressing in p-Channel Power VDMOSFETs”, Facta Universitatis, Series: Electronics and Energetics, vol. 29, no. 1 pp. 49-60 (2016) , ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1601049M http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/1288/782
Albena Paskaleva, Dencho Spassov, Danijel Danković, “Consideration of Conduction Mechanisms in High-k Dielectric Stacks as a Tool to Study Electrically Active Defects”, Facta Universitatis, Series: Electronics and Energetics, vol. 30, no. 4, pp. 511-548 (2017) , ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1704511P http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/2879/1712
Vojkan Davidović, Danijel Danković, Snežana Golubović, Snežana Djorić-Veljković, Ivica Manić, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, Srboljub Stanković, “ NBT Stress and Radiation Related Degradation and Underlying Mechanisms in Power VDMOSFETS”, Facta Universitatis, Series: Electronics and Energetics, vol. 31, no. 3 pp. 367-388 (2018) , ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1803367D http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/3869/2248
Miloš Đorđević, Danijel Danković, “ A Smart Weather Station Based on Sensor Technology”, Facta Universitatis, Series: Electronics and Energetics, vol. 32, no. 2, pp. 195-210 (2019) , ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1902195D http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/4026
Nikola Mitrović, Danijel Danković, Zoran Prijić, Ninoslav Stojadinović, “Modeling of NBTI degradation in p-channel VDMOSFETS”, Journal of Applied Engineering Science, vol. 18, no. 4, pp. 515-519 (2020), ISSN: 1451-4117 (Print), 1821-3197 (Online), DOI: 10.5937/jaes0-26760, http://www.engineeringscience.rs/article///Volume_18_722
Miloš Đorđević, Vesna Paunović, Danijel Danković, Branislav Jovičić, Ninoslav Stojadinović, “Smart Autonomus Agricutural System for Improving Yields in Greenhouse based on Sensor and IoT Technology”, Journal of Applied Engineering Science, vol. 18, no. 4, pp. 605-613 (2020), ISSN: 1451-4117 (Print), 1821-3197 (Online) DOI: 10.5937/jaes0-26722, http://www.engineeringscience.rs/article///Volume_18_734
Danijel Danković, Miloš Đorđević,“ A Review of Real Time Smart Systems Developed at University of Niš”, Facta Universitatis, Series: Electronics and Energetics, vol. 33, no. 4, pp. 669-686 (2020), ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE2004669D, http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/6718
Miloš Marjanović, Aleksandra Stojković, Aneta Prijić, Danijel Danković, Zoran Prijić, “Spatial SPICE Model of a Wireless Sensor Network Node Based on a Thermoelectric Generator”, Facta Universitatis, Series: Electronics and Energetics, vol. 35, no. 4, pp. 513-539 (2022), ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE2204513M, http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/10565
Nikola Mitrović, Milan Đorđević, Sandra Veljković, Danijel Danković, “Implementation and Testing of WebSocket Protocol in ESP32 Based IoT Systems”, Facta Universitatis, Series: Electronics and Energetics, vol. 36, no. 2, pp. 267-284 (2023), ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE2302267M, http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/11223
Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović “Spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Proc. 23rd International Conference on Microelectronics (MIEL 2002), Niš (Yugoslavia), May 2002, pp. 717-722.
Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, “Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Proc. 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2002), Rimini (Italy), October 2002, pp. 1465-1468.
Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev and Ninoslav Stojadinović, “Effects of negative gate bias stressing in thick gate oxides for power VDMOSFETs”, Proc. 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002), Grenoble (France), November 2002, pp. 41-44.
Vojkan Davidović, Ivica Manić, Snežana Djorić-Veljković, Danijel Danković, Snežana Golubović, Sima Dimitrijev and Ninoslav Stojadinović, “Effects of negative gate bias stressing in power VDMOSFETs”, Proc. 7th International Symposium on Microelectronics Technologies and Microsystems (MTM 2003), Sozopol (Bulgaria), September 2003, pp. 150-155.
Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović and Sima Dimitrijev, “Effects of electrical stressing in power VDMOSFETs”, Proc. 2003 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC03), Hong-Kong, December 2003, pp. 291-296. (rad po pozivu)
Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović and Sima Dimitrijev, “Electrical stressing effects in power VDMOSFETs”, Proc 7th International Seminar on Power Semiconductors (ISPS 2004), Prague (Czech Republic), September 2004, pp. 109-114.
Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, and Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Proc. 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2005), Arcachon (France), October 2005, pp. 1343-1348.
Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović “Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs”, Proc. 25th International Conference on Microelectronics (MIEL 2006), Belgrade (Serbia), May 2006, pp. 639-644.
Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović “Lifetime Estimation in NBT Stressed P-Channel Power VDMOSFETs”, Proc. 25th International Conference on Microelectronics (MIEL 2006), Belgrade (Serbia), May 2006, pp. 645-648.
Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković, and Sima Dimitrijev “Turn-Around of Threshold Voltage in Gate Bias Stressed P-Channel Power VDMOS Transistors”, Proc 8th International Seminar on Power Semiconductors (ISPS 2006), Prague (Czech Republic), August 2006, pp. 85-89.
Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Proc. 17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal (Germany), October 2006, pp. 1828-1833.
Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, and Snežana Golubović, “Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs”, Invited paper – Proc. 8th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS ‘07), Niš (Serbia), September 2007, pp. 275-282. (rad po pozivu)
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Proc. 18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2007), Arcachon (France), October 2007, pp. 1400-1405.
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović “New Approach in Estimating the Lifetime in NBT Stressed P-Channel Power VDMOSFETs”, Proc. 26th International Conference on Microelectronics (MIEL 2008), Niš (Serbia), May 2008, pp. 599-602.
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović “Negative Bias Temperature Stress and Annealing Effects in p-Channel Power VDMOSFETs”, 9th International Seminar on Power Semiconductors (ISPS 2008), Prague (Czech Republic), August 2008, 127-132.
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Ninoslav Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2008), Maastricht (The Netherlands), September 2008, 1313-1317.
Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “Effects of low gate bias annealinig in NBT stressed n-channel power VDMOSFETs”, Proc. 20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2009), Arcachon (France), October 2009, pp. 1003-1007.
Snežana Djorić-Veljković, Danijel Danković, A. Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović “Degradation of p-channel Power VDMOSFETs under Pulsed NBT Stress”, Proc. 27th International Conference on Microelectronics (MIEL 2010), Niš (Serbia), May 2010, pp. 443-446.
Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Aneta Prijić, Vojkan Davidović, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović “Negative Bias Temperature Instability in p-Channel Power VDMOSFETs Under Pulsed Bias Stress”, 10th International Seminar on Power Semiconductors (ISPS 2010), Prague (Czech Republic), September 2010, 173-178.
Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Zoran Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Proc. 21th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), Montecassino and Gaeta (Italy), October 2010, pp. 1278-1282.
Ivica Manić, Danijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “ NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static under the static and pulsed NBT stress conditions ”, Proc. 22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011), Bordeaux (France), October 2011, pp. 1540-1543.
Danijel Danković, Aneta Prijić, Ivica Manić, Zoran Prijić and Ninoslav Stojadinović “Measurements of Negative Bias Temperature Instability (NBTI) in p-channel Power VDMOSFETs”, 11th International Seminar on Power Semiconductors (ISPS 2012), Prague (Czech Republic), August 2012, 240-245.
Danijel Danković and Miloš Marjanović “The Importance of the IEEESTEC Students’ Projects Confernce”, 2013 International Conference on Technology Transfer (ICTT 2013), Niš (Serbia), June 2013, 265-268.
Zoran Prijić, Danijel Danković, Aneta Prijić, Ivica Manić, Ninoslav Stojadinović, “ A Method for Measuring NBTI Degradation in p-channel Power VDMOSFETs ”, Proc. 50th International Conference on Microelectronics, Devices and Materials (MIDEM 2014), Ljubljana (Slovenia), October 2014, pp. 9-16. (invited paper)
Miloš Marjanović, Vesna Paunović, Zoran Prijić, Aneta Prijić and Danijel Danković, “On the Measurement Methods for Dielectric Constant Determination in Nb/BaTiO3 Ceramics”, Proc. 10th International Symposium on Industrial Electronics (INDEL 2014), Banja Luka (Republika Srpska), 6-8 Novembar 2014, str. 38-41.
Miloš Marjanović, Danijel Danković, Vojkan Davidović, Aneta Prijić, Ninoslav Stojadinović, Zoran Prijić, Nebojša Janković, “Modeling and PSPICE aimulation of radiation stress influence on threshold voltage shifts in p-channel power VDMOS transistors”, Proc. 3rd International Conference on Radiation and Applications in Various Fields of Research (RAD 2015), Budva (Montenegro), 8-12 June 2015, str. 405-408.
Miloš Marjanović, Vesna Paunović, Danijel Danković, Aneta Prijić, Zoran Prijić, “Characterization and SPICE Modeling of Ceramic-Core Inductors at High Frequencies”, Program and the Book of Abstarcts Serbian Ceramic Society Conference – Advanced Ceramics and Application IV, New Frontiers in Multifunctional Material Science and Processig 2015, Belgrade (Serbia), September 2015, pp. 66-66.
Miloš Marjanović, Danijel Danković, Aneta Prijić, Vesna Paunović, Zoran Prijić, “High frequency characterization and modelling of ceramic capacitors”, Proc. 12th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS ‘15), Niš (Serbia), October 2015, pp. 110-113.
Miloš Marjanović, Aneta Prijić, Danijel Danković, Zoran Prijić, Vojkan Davidović, “PSPICE modeling of ionizing radiation effects in p-channel power VDMOS transistors”, Proc. 3rd International Conference on Electrical, Electronic and Computing Engineering (IcETRAN 2016), Zlatibor (Serbia), June 2016, MOI1.3.1-6. (nagrada za najbolji rad u stručnoj sekciji Mikroelektronika i optoelektronika)
Aneta Prijić, Miloš Marjanović, Ljubomir Vračar, Danijel Danković, Dejan Milić, Zoran Prijić, “A Steady-State SPICE Modeling of the Thermoelectric Wireless Sensor Network Node”, Proc. 4th International Conference on Electrical, Electronics and Computing Engineering (IcETRAN 2017), Kladovo (Serbia), June 2017, MOI2.3.1-6.
Vojkan Davidović, Albena Paskaleva, Dencho Spassov, Elzbieta Guziewicz, Tomasz Krajewski, Snežana Golubović, Snežana Djorić-Veljković, Ivica Manić, Danijel Danković, and Ninoslav Stojadinović, “Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks”, Proc. 30th International Conference on Microelectronics (MIEL 2017), Niš (Serbia), October 2017, pp. 143-146.
Danijel Danković, Ivica Manić, Ninoslav Stojadinović, Zoran Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Albena Paskaleva, Dencho Spassov, and Snežana Golubović, “Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs”, Proc. 30th International Conference on Microelectronics (MIEL 2017), Niš (Serbia), October 2017, pp. 147-151.
Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Srboljub Stanković, Aneta Prijić, Zoran Prijić, Ivica Manić, Danijel Danković, “ NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Proc. 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Aalborg (Denmark), October 2018, pp. 135-1414.
Nikola Mitrović, Danijel Danković, Zoran Prijić and Ninoslav Stojadinović, “Modelling of ΔVT in NBT Stressed P-Channel Power VDMOSFETs”, Proc. 31th International Conference on Microelectronics (MIEL 2019), Niš (Serbia), 16-18 September 2019, pp. 177-180.
Miloš Đorđević, Vesna Paunović, Danijel Danković, Milić Pejović, “A Method for Automating the Measurement and Characterization of Electrical Materials”, Proc. 14th International Conference on Advanced Technologies Systems and Services in Telecommunications (TELSIKS ‘19), Niš (Serbia), 23-25 September 2019, pp. 219-222.
Milan Stojanović, Nikola Mitrović, Ljubomir Vračar, Danijel Danković “Design and Realization of Solar Cell Monitoring System”, Proc. 7th Student conference “Energy efficiency and sustainable development” (SCEESD ‘19), Skopje (Macedonia), 29.October-01.November 2019, pp. 219-222.
Nikola Mitrović, Milan Đorđević, Sandra Veljković, Danijel Danković, “Testing the efficiency of Wi-Fi data transmission in ESP-based IoT systems”, Proc. International Conference E-business technologies (EBT 2021), Belgrade (Serbia), 10-11 June 2021, pp. 110-112.
Danijel Danković, Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Djorić Veljković, Zoran Prijić, Albena Paskaleva, Dencho Spassov, Snežana Golubović, “A Review of the Electric Circuits for NBTI Modeling in p-Channel Power VDMOSFETs”, Proc. 32nd International Conference on Microelectronics (MIEL 2021), Niš, Serbia, 12-14 September 2021, pp. 55-62, (invited paper).
Miloš Marjanović, Aleksandra Stojković, Aneta Prijić, Danijel Danković, Zoran Prijić, “A SPICE Compatible Spatial Equivalent Circuit Model of the Heatsink” Proc. 32nd International Conference on Microelectronics (MIEL 2021), Niš, Serbia, 12-14 September 2021, pp. 103-106.
Sandra Veljković, Nikola Mitrović, Snežana Djorić Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, Albena Paskaleva, Dencho Spassov, Zoran Prijić, Aneta Prijić, Srboljub Stanković, Danijel Danković, “Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors” Proc. 32nd International Conference on Microelectronics (MIEL 2021), Niš, Serbia, 12-14 September 2021, pp. 345-350.
Danijel Danković, Vojkan Davidović, Snežana Golubović, Sandra Veljković, Nikola Mitrović, Snežana Djorić-Veljković, “Radiation and Annealing Related Effects in NBT Stressed P-Channel Power VDMOSFETs”, Proc 32nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Bordeaux, France, 4-7 October, 2021, pp. 114273 (1-5).
Nikola Mitrović, Milan Djordjević, Sandra Veljković and Danijel Danković, “Implementation of WebSockets in ESP32 based IoT Systems”, Proc. 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS 2021), Niš, Serbia, 20-22 October 2021, pp 261-264.
Nikola Mitrović, Sandra Veljković, Zoran Prijić, Danijel Danković, “Comparison of the performance of the different GPS receivers in practical applications”, Proc. IEEE Zooming Innovation in Consumer Technologies Conference (ZINC 2022), Novi Sad, Serbia, 25-26 May 2022, pp. 11-16.
Nikola Mitrović, Milan Djordjević, Sandra Veljković, Danijel Danković, “NFC enabled Wi-Fi managging system forESP32 based IoT system”, Proc. 2nd International Conference on E-business technologies (EBT 2022), Belgrade, Serbia, 23-24 June 2022, pp. 57-60.
Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Emilija Živanović, Zoran Prijić, Danijel Danković, “Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications”, Proc 33rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2022), Berlin, Germany, 22-26 September, 2022, pp. 114634 (1-5).
Nikola Mitrović, Milan Djordjević, Sandra Veljković, Danijel Danković, “Design of IoT platform for air quality monitoring system”, Proc. 19th International Conference “Man and Working Environment” - Occupational and Environmental Safety Engineering & Management (OESEM 2022), Niš, Serbia, 24-25 November 2022, pp. 195-199.
Nikola Mitrović, Milan Djordjević, Sandra Veljković, Danijel Danković, “IoT Enabled Software Platform for Air Quality Measurements”, Proc. 3rd International Conference on E-business technologies (EBT 2023), Belgrade, Serbia, 15-17 June 2023, pp. 147-151.
Sandra Veljković, Nikola Mitrović, Igor Jovanović, Emilija Živanović, Albena Paskaleva, Dencho Spassov, Dragan Mančić, Danijel Danković, “Self-heating of stressed VDMOS devices under specific operating conditions”, Proc 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Toulouse, France, 2-5 October, 2023, accepted manuscript.
Vojkan Davidović, Snežana Golubović, Ivica Manić, Danijel Danković, Ninoslav Stojadinović, Snežana Djorić-Veljković, Sima Dimitrijev, “Primena tehnika za razdvajanje efekata naelektrisanja u oksidu i površinskih stanja kod VDMOS tranzistora snage”, Zbornik radova XLVI konferencije za ETRAN, Banja Vrućica-Teslić (Republika Srpska), 03-06 Jun 2002, sveska IV, str. 145-148.
Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, Sima Dimitrijev, “Efekti naprezanja negativnom polarizaciojom na gejtu kod VDMOS tranzistora snage”, Zbornik radova XLVII konferencije za ETRAN, Herceg Novi, 08-13 Jun 2003, sveska IV, str. 183-186.
Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković, Sima Dimitrijev, “Turn-around efekat napona praga kod PMOS tranzistora naprezanih pozitivnim naponima na gejtu”, Zbornik radova XLIX konferencije za ETRAN, Budva, 05-10 Jun 2005, sveska IV, str. 125-128.
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, “Nestabilnosti p-kanalnog VDMOS tranzistora snage usled naponsko-temperaturnih naprezanja sa negativnom polarizacijom gejta”, Zbornik radova XLIX konferencije za ETRAN, Budva, 05-10 Jun 2005, sveska IV, str. 129-132 (nagrada za najbolji rad u stručnoj komisiji Mikroelektronika i optoelektronika).
Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “NBTI in p- and n-channel power VDMOSFETs”, Zbornik radova 52. konferencije za ETRAN, Palić, 08-12 Jun 2008, str. MO1.1-1-4.
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, “Lifetime evaluation in p-channel power VDMOSFETs under NBT stress”, Zbornik radova 52. konferencije za ETRAN, Palić, 08-12 Jun 2008, str. MO1.2-1-4 (nagrada za najbolji rad u stručnoj komisiji Mikroelektronika i optoelektronika).
Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković “Instabilities in p-channel power VDMOSFETs subjected to multiple negative bias temperature stressing and annealing”, Zbornik radova 53. konferencije za ETRAN, Vrnjačka banja, 15-19 Jun 2009, str. MO1.1-1-4.
Djordje Kostadinović, Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković “Efekti spontanog oporavka kod p-kanalnih VDMOS tranzistora snage naprezanih jakim električnim poljem u oksidu gejta”, Zbornik radova 53. konferencije za ETRAN, Vrnjačka banja, 15-19 Jun 2009, str. MO1.2-1-4.
Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković “Instabilities in p-channel power VDMOSFETs subjected to pulsed negative bias temperature stressing”, Zbornik radova 54. konferencije za ETRAN, Donji Milanovac, 7-10 Jun 2010, str. MO1.1-1-4.
Danijel Danković, Vladica Sinadinović, Dušan Milošević, Zoran Prijić “Realizacija “inteligentnog” semafora na bazi Nanoboard-a 3000”, Zbornik radova 8. simpozijuma za industrijsku elektroniku (INDEL 2010), Banja Luka (Republika Srpska), 4-6 Novembar 2010, str.120-124.
Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, Snežana Djorić-Veljković “Određivanje perioda pouzdanog rada p-kanalnih VDMOS tranzistora snage podvrgnutih kontinualnim i impulsnim NBT naprezanjima”, Zbornik radova 56. konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.1-1-4.
Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “Modelovanje napona praga p-kanalnih VDMOS tranzistora snage tokom naponsko temperaturnih naprezanja i odžarivanja”, Zbornik radova 56. konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.2-1-4.
Danijel Danković, Aneta Prijić, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “Naponsko temperaturna naprezanja p-kanalnih VDMOS tranzistora snage”, Zbornik radova 57. konferencije za ETRAN, Zlatibor, 3-6 Jun 2013, str. MO1.1-1-4 (nagrada za najbolji rad u stručnoj sekciji Mikroelektronika i optoelektronika).
Snežana Đorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Uticaj odžarivanja na oporavak električno naprezanih p-kanalnih VDMOS tranzistora snage”, Zbornik radova 57. konferencije za ETRAN, Zlatibor, 3-6 Jun 2013, str. MO1.2-1-6 (nagrada – predloženi rad u stručnoj sekciji Mikroelektronika i optoelektronika za štampu u časopisu).
Miloš Marjanović, Danijel Danković, Aneta Prijić, Zoran Prijić, Vojkan Davidović, Nebojša Janković, “Modeliranje i PSPICE simulacija NBTI efekata kod VDMOS tranzistora”, Zbornik radova 58. konferencije za ETRAN, Vrnjačka Banja, 2-5 Jun 2014, str. MO1.1.1-5 (nagrada –Najbolji rad mladog istraživača na sekciji MO).
Aleksandar Ilić, Zoran Prijić, Aneta Prijić, Vojkan Davidović, Danijel Danković, Ninoslav Stojadinović, “Mobilna eksperimentalna postavka za određivanje napona praga VDMOS tranzistora snage”, Zbornik radova 58. konferencije za ETRAN, Vrnjačka Banja, 2-5 Jun 2014, str. MO1.2.1-4.
Vojkan Davidović, Albena Paskaleva, Dencho Spassov, Elzbieta Guziewicz, Tomasz Krajewski, Snežana Golubović, Snežana Djoric-Veljković, Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “Ispitivanje višeslojnih HfO2/Al2O3struktura za memorijske komponente”, Zbornik radova 61. konferencije za ETRAN, Kladovo, 5-8 Jun 2017, str. MO1.1.1-4. (nagrada –Najbolji rad na sekciji MO).
Miloš Marjanović, Vesna Paunović, Aneta Prijić, Danijel Danković, Zoran Prijić, “Analiza debljine silicijum dioksida pomoću TCAD simulatora”, Zbornik radova 61. konferencije za ETRAN, Kladovo, 5-8 Jun 2017, str. NM1.3.1-5.
Miloš Marjanović, Danijel Danković, “ Deset godina Konferencije studentskih projekata IEEESTEC”, Zbornik radova 10th Student Projects Conference, Niš, 23 Novembar 2017, str. 1-4.
Vojkan Davidović, Danijel Danković, Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, “Elektrohemijski procesi kod p-kanalnih VDMOS tranzistora snage pri sukcesivnom NBT naprezanju i ozračivanju”, Zbornik radova 62. konferencije za ETRAN, Palić, 11-14 Jun 2018, str. 299-303.
Miloš Đorđević, Branislav Jovičić, Bojan Milosavljević, Vesna Paunović, Danijel Danković, “ Sistem pametne kuće zasnovan na GSM mobilnoj i IoT tehnologiji”, Zbornik radova 11th Student Projects Conference, Niš, 29 Novembar 2018, str. 29-34.
Snežana Đorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Procedure merenja električnih karakteristika naprezanih p-kanalnih VDMOS tranzistora snage”, Zbornik radova 63. konferencije za ETRAN, Srebrno Jezero, 03-06 Jun 2019, str. 601-604.
Miloš Marjanović, Danko Danković, Danijel Danković, “Projekat Centra za promociju nauke “Pretočimo znanje u praktičan rad” realizovan u Naučnim klubovima Niš i Leskovac”, Zbornik radova 12th Student Projects Conference, Niš, 28 Novembar 2019, str. 105-108.
Nikola Mitrović, Danijel Danković, Zoran Prijić, Ninoslav Stojadinović, “Modelovanje promena napona praga p-kanalnih VDMOS tranzistora snage tokom NBT naprezanja”, Zbornik radova 64. konferencije za ETRAN, Niš, 28-30 Septembar 2020.
Miloš Đorđević, Miloš Marjanović, Vesna Paunović, Danijel Danković, “Karakterizacija dopirane BaTiO3 keramike primenom nove metode za merenje električnih karakteristika”, Zbornik radova 64. konferencije za ETRAN, Niš, 28-30 Septembar 2020.
Nikola Mitrović, Danijel Danković, Zoran Prijić, Ninoslav Stojadinović, “Modeling of NBTI degradation in p-channel VDMOSFETS”, Proceedings of 2nd YOUng ResearcherS Conference 2020 (YOURS), Belgrade (Serbia), September 2020.
Miloš Djordjević, Branislav Jovičić, Stefan Marković, Vesna Paunović, Danijel Danković, “Smart Autonomus Agricutural System for Improving Yields in Greenhouse based on Sensor and IoT Technology”, Proceedings of 2nd YOUng ResearcherS Conference 2020 (YOURS), Belgrade (Serbia), September 2020.
Danijel Danković, Miloš Marjanović, “Projekat Centra za promociju nauke “Za IEEESTEC se spremi” na Elektronskom fakultetu u Nišu”, Zbornik radova 13th Student Projects Conference, Niš, 26 Novembar 2020, str. 199-200.
Sandra Veljković, Nikola Mitrović, Snežana Đorić-Veljković, Vojkan Davidović, Snežana Golubović, Danijel Danković, “Efekti zračenja i odžarivanja kod naponsko temperaturno naprezanih p-kanalnih VDMOS tranzistora snage”, Zbornik radova 65. konferencije za ETRAN, Etno selo Stanišići, Republika Srpska, 8-10 Septembar, 2021, str. 321-325.
Danijel Danković, Miloš Marjanović, Jana Vračar, Nikola Mitrović, Sandra Veljković, Emilija Živanović, “IEEESTEC na-S-paja”, Zbornik radova 14th Student Projects Conference, Niš, Serbia, 25 Novembar 2021, str. 283-286.
Danijel Danković, Emilija Živanović, Miloš Marjanović, “Petnaest godina Konferencije studentskih projekata IEEESTEC”, Zbornik radova 15th Student Projects Conference, Niš, Serbia, 24 Novembar 2022, str. 1-4.
Miloš Marjanović, Emilija Živanović, Danijel Danković, Goran Ristić, “Dozimetar jonizujućeg zračenja zasnovan na Arduino mikrokontroleru i senzoru BG51”, Zbornik radova 15th Student Projects Conference, Niš, Serbia, 24 Novembar 2022, str. 299-302.
Emilija Živanović, Miloš Marjanović, Sandra Veljković, Nikola Mitrović, Jana Vračar, Danijel Danković, “U susret jubileju: naša petnaesta godina kroz radionice i druženje”, Zbornik radova 15th Student Projects Conference, Niš, Serbia, 24 Novembar 2022, str. 315-319.
Zoran Prijić, Danijel Danković, Aneta Prijić, Vesna Paunović, Emilija Živanović, Marko Dimitrijević, Dragan Mančić, “Iskustva u realizaciji projekata iz oblasti razvoja visokog obrazovanja na Elektronskom fakultetu Univerziteta u Nišu”, Zbornik radova 67. konferencije za ETRAN, Istočno Sarajevo, Bosna i Hercegovina, 5-8 Jun, 2023, EDU1.1 – 1-6.
Danijel Danković, Aneta Prijić, Ivica Manić, Ljubomir Vračar, Zoran Prijić, and Ninoslav Stojadinović “Nova metoda za ispitivanje nestabilnosti usled naponsko temperaturnih naprezanja VDMOS tranzistora snage”, Priznato tehničko rešenje spada u kategoriju: nova metoda, softver M85 (2012). Nastavno-naučno veće Elektronskog fakulteta u Nišu, Broj 17/10-010/13-001 od 17.01.2013.