Naučne publikacije akademskog osoblja

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Datum kreiranja: 02.03.2017.

Goran Ristić

Dodatne informacije

  • Lični podaci

  • Datum rođenja: 1964.
  • Mesto rođenja: Niš
  • Obrazovanje

  • Fakultet: Filozofski fakultet
  • Odsek / Grupa / Smer: Fizika
  • Godina diplomiranja: 1990
  • Spisak publikacija

  • Knjige i udžbenici:

    i.1. M. M. Pejović, G. S. Ristić, S. M. Golubović, "Rešeni zadaci za pripremu prijemnog ispita iz fizike", Elektronski fakultet, Niš, 2000.


    i.2. M. M. Pejović, S. M. Golubović, G. S. Ristić, A. B. Jakšić, "Opšti kurs fizike - Zbirka rešenih zadataka", Elektronski fakultet, Niš, 2002.


    i.3. G. S. Ristić, "Uvod u kvantnu i statističku fiziku", Elektronski fakultet, Niš, 2008.

  • Radovi u časopisima sa IMPACT faktorom:

    a.1. G. Ristić, S. Golubović, M. Pejović, "pMOS transistors for dosimetric application", Electronics Letters,  Vol. 29 (No. 18), pp. 1644-1646, 1993.


    a2. M. Pejović, G. Ristić, S. Golubović, "A comparison between thermal annealing and UV -radiation annealing of g - irradiated NMOS transistors", Physica Status Solidi (a), 140, pp. K53-K57, 1993.


     a.3. M. Pejović, S. Golubović, G. Ristić, M. Odalović, "Annealing of gamma-irradiated Al ‑ gate NMOS transistors", Solid-State Electronics, 37 (1), pp. 215-216, 1994.


     a.4. M. Pejović, S. Golubović, G. Ristić, M. Odalović, "Temperature and gate bias effects on gamma - irradiated Al ‑ gate metal ‑ oxide ‑ semiconductor transistors", Japanese Journal of Applied Physics, 33 (2), pp. 986-990, 1994.


     a.5. G. Ristić, S. Golubović, M. Pejović, "pMOS dosimeter with two-layer gate oxide operated at zero and negative bias", Electronics Letters, 30 (4), pp. 295-296, 1994.


     a.6. S. Golubović, G. Ristić, M. Pejović, S. Dimitrijev, "The role of interface traps in rebound mechanisms", Physica Status Solidi (a), 143, pp. 333-339, 1994.


     a.7. G. Ristić, S. Golubović, M. Pejović, "P-channel metal-oxide-semiconductor dosimeter fading dependencies on gate bias and oxide thickness", Applied Physics Letters, 66 (1), pp. 88-89, 1995.


     a.8. N. Stojadinović, M. Pejović, S. Golubović, G. Ristić, C. Davidović, S. Dimitrijev, "Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs", Electronics Letters, 31 (6), pp. 497-498, 1995.


     a.9. M. Pejović, S. Golubović, G. Ristić, "Temperature-induced rebound in Al-gate NMOS transistors", IEE Proceedings-G: Circuits, Devices and Systems, 142 (6), pp. 413-416, 1995.


    a.10. A. Jakšić, G. Ristić, M. Pejović, "Rebound effect in power VDMOSFETs due to latent interface-trap generation", Electronics Letters, 31 (14), pp. 1198-1199, 1995.


    a.11. M. Pejović, J. Živković, Č. Milosavljević, G. Ristić, "Formative time determination in nitrogen-filled tube using statistical methods", Japanese Journal of Applied Physics (Part 1), 34(3), pp. 1652-1656, 1995.


    a.12. A. Jakšić, G. Ristić, M. Pejović, “Analysis of the processes in power VDMOSFETs  during gamma-ray irradiation and subsequent thermal annealing”, Physica Status Solidi (a), 155 (2), pp. 371-379, 1996.


    a.13. G. Ristić, S. Golubović, M. Pejović, "Sensitivity and fading of pMOS dosimeters with thick gate oxide", Sensors and Actuators: A. Physical, A 51, pp. 153-158, 1996.


    a.14. M. M. Pejović, C. Lj. Marković, G. S. Ristić, S. Mekić, "Determination of formative time of electrical breakdown in nitrogen-filled tube", IEE Proceedings - Science, Measurement and Technology, 143 (6), pp. 413-415, 1996.


    a.15. M. Pejović, G. Ristić, A. Jakšić, "Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing", Applied Surface Science, 108 (1), pp. 141-148, 1997.


    a.16. M. Pejović, G. Ristić, "Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures", Solid-State Electronics, 41 (5), pp. 715-720, 1997.


    a.17. M. Pejović, A. Jakšić, G. Ristić, B. Baljošević, "Processes in n-channel MOSFETs during postirradiation thermal annealing", Radiation Physics and Chemistry, 49 (5), pp.521-525, 1997.


    a.18. G. Ristić, A. Jakšić, M. Pejović, “pMOS dosimetric transistors with two-layer gate oxide”, Sensors and Actuators: A. Physical, A 63, pp. 129-134, 1997.


    a.19. M. M. Pejović, C. Lj. Marković, G. S. Ristić, S. Mekić, "Efficiency of copper and gold cathode in initiation of secondary emission in nitrogen-filled tube”, VACUUM - Surface Engineering, Surface Instrumentation and Vacuum Technology, 48 (6), pp. 129-134, 1997.


    a.20. G. S. Ristić, M. Pejović, A. Jakšić, “Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing'', Journal of Applied Physics, 83 (6), pp. 2994-3000, 1998.


    a.21. G. S. Ristić, M. M. Pejović, A. B. Jakšić, “Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases”, Microelectronic Engineering, 45 (3), 1365-1371, 1998.


    a.22. A. Jakšić, M. Pejović, G. Ristić, S. Raković, “Latent interface-trap generation in commercial power VDMOSFETs”, IEEE Trans. Nuclear Science, 45 (3), pp.1365-1371, 1998.


    a.23. M. Pejović, A. Jaksić, G. Ristić, "The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140 oC", Journal of Non-Crystalline Solid, 240, pp. 182-192, 1998.


    a.24. M. M. Pejović, J. P. Karamarkovic, G. S. Ristić, "The application of time delay method for analysis of processes which initiate electrical breakdown in 1.3 mbar nitrogen", IEEE Transaction of Plasma Science, 26 (6), pp. 1733-1737, 1998


    a.25. M. M. Pejović, G. S. Ristić, Č. S. Milosavljević, P. G. Vuković, J. P. Karamarković, "Statistical reliability of time delay values for nitrogen-filled tube at pressure of 1.3 mbar", VACUUM- Surface Engineering, Surface Instrumentation and Vacuum Technology, 53 (3-4), pp. 435-440, 1999.


    a.26. M. M. Pejović, G. S. Ristić, Z. Lj. Petrović, "Influence of light from nitrogen-filled lamps on time delay of electrical breakdown in nitrogen-filled tubes", Journal of Physics D: Applied Physics, 32 (13), pp. 1489-1493, 1999.


    a.27. G. S. Ristić, M. M. Pejović, A. B. Jakšić, "Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors", Journal of Applied Physics, 87 (7), pp. 3468-3477, 2000.


    a.28. A. B. Jakšić, G. S. Ristić, M. M. Pejović, "New experimental evidence of latent interface-trap build up in power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), pp. 580-586, 2000.


    a.29. A. B. Jakšić, M. M. Pejović, G.S. Ristić, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), pp. 659-666, 2000.


    a.30. A. B. Jakšić, M. M. Pejović, G. S. Ristić, "Properties of latent interface-trap building in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments", Applied Physics Letters, 77 (25), pp. 4220-4222, 2000.


    a.31. M. M. Pejović,  G. S. Ristić, "Nitrogen-filled tube as a sensor of ionizing radiation", Review of Scientific Instruments, 71 (6), pp. 2377-2379, 2000.


    a.32. M. M. Pejović, G. S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method", Journal of Physics D: Applied Physics, 33 (21), pp. 2786-2790, 2000.


    a.33. M. M. Pejović, G. S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in argon using the time delay method", Physics of Plasmas, 9 (1), pp. 364-370, 2002.


    a.34.  M. M. Pejović, G. S. Ristić, "Memory effects in argon, nitrogen and hydrogen", IEEE Transaction of Plasma Science, 30 (3), pp. 1315-1319, 2002.


    a.35. M. M. Pejović, G. S. Ristić, J. P. Karamarković, "Electrical breakdown in low pressure gases", Journal of Physics D: Applied Physics, Topical Review, 35, R91-R103, 2002.


    a.36. M. M. Pejović, G. S. Ristić, Č. S. Milosavljević, and M. M. Pejović, "Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglow", Journal of Physics D: Applied Physics, 35, pp. 2536-2542, 2002.


    a.37. A. Jakšić, G. Ristić, M. Pejović, A. Mohammadzadeh, C. Sudre, and W. Lane, "Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs”,  IEEE Trans. Nuclear Science, 49 (3), pp. 1356-1363, 2002.


    a.38. G. S. Ristić, M. M. Pejović, A. B. Jakšić, "Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs”, Applied Surface Science, 220, pp. 181-185, 2003.


    a.39. W. Zhao, G. Ristić, J. A. Rowlands, "X-ray imaging performance of structured cesium iodide scintillators”, Medical Physics, 31(9), pp. 2594-2605, 2004;


    kategorija časopisa: M21, impakt faktor: 2.748.


    a.40. M. M. Pejović, M. M. Pejović, G. S. Ristić, "Gamma and UV radiation effects on breakdown voltage of neon-filled tube", IEEE Transaction of Plasma Science, 33 (3), pp. 1047-1052, 2005;


    kategorija časopisa: M22, impakt faktor: 1.143.


    a.41. G. S. Ristić, M. M. Pejović, A. B. Jakšić, "Fowler-Nordheim high electric field stress of power VDMOSFETs", Solid-State Electronics, 49 (7), pp. 1140-1152, 2005;


    kategorija časopisa: M21, impakt faktor: 1.247.


    a.42. G. S. Ristić, M. M. Pejović, A. B. Jakšić, "Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing", Applied Surface Science, 252 (8), pp. 3023-3032, 2006;


    kategorija časopisa: M22, impakt faktor: 1.436.


    a.43. A. R. Lubinsky, W. Zhao, G. Ristic, J. A. Rowlands, “Screen optics effects on detective quantum efficiency in digital radiography: Zero-frequency effects”, Medical Physics, 33, pp. 1499-1509, 2006;


    kategorija časopisa: M21, impakt faktor: 3.571.


    a.44. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress", Journal of Non-Crystalline Solid, 353 (2), pp. 170-179, 2007; kategorija časopisa: M21, impakt faktor: 1.319.


    a.45. G.S. Ristić, "Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors", Journal of Physics D: Applied Physics, Topical Review,  41, pp. 023001 (19pp), 2008;


    kategorija časopisa: M21, impakt faktor: 2.104


    a.46. M. M. Pejović, J. P. Karamarković, G. S. Ristić, M.M. Pejović, "Analysis of electrically neutral active particles loss in afterglow in krypton at 2.6 mbar pressure", Physics of Plasmas, 15 (1), pp. 013502 – 1-7, 2008; kategorija časopisa: M21, impakt faktor: 2.427.


    a.47. S. Jha, E.C. Jelenković, M.M. Pejović, G.S. Ristić, M. Pejović, K.Y. Tong, C. Surya, I. Bello and W.J. Zhang, "Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays", Microelectronic Engineering, 86 (1), pp. 37-40  (2009);


    kategorija časopisa: M22, impakt faktor: 1.323.


    a.48. T.N. Nešić, G.S. Ristić, J.P. Karamarković, M.M. Pejović, "Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve", Journal of Physics D: Applied Physics, 41, 225205 (10 pp), 2008;


    kategorija časopisa: M21, impakt faktor: 2.104.


    a.49. G.S. Ristić, "Thermal and UV annealing of irradiated pMOS dosimetric transistors", Journal of Physics D: Applied Physics, 42, 135101 (12pp), 2009; kategorija časopisa: M21, impakt faktor: 2.083.


    a.50. E.V. Jelenkovic, G.S.  Ristic, M.M. Pejovic, M.M.  Jevtic, K.J. Shrawan, M.  Videnovic-Misic, M.  Pejovic, and K.Y.  Tong, "Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation", Journal of Physics D: Applied Physics,  44 (1), 015101 (7 pp), 2011; kategorija časopisa: M21, impakt faktor: 2.109.   


    a.51. G.S. Ristić, N.D. Vasović, "Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 oC", Semiconductor Science & Technology, 49 (7), pp. 1140 – 1152, 2011;


    doi:10.1088/0268-1242/26/8/085019; kategorija časopisa: M22, impakt faktor: 1.323.


    a.52. G.S. Ristić, N.D. Vasović, M. Kovačević, A.B. Jakšić, "The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)", Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atom, 269, 2703 – 2708, 2011;


    kategorija časopisa: doi:10.1016/j.nimb.2011.08.015;  M21, impakt faktor: 1.156.


    a.53. G.S. Ristić, "Defect behaviors during high electric field stress of p-channel power MOSFETs ", IEEE Trans. on Device and Materials Reliability, 12 (1),  94 – 100, March 2012;


    doi: 10.1109/TDMR.2011.2168399; kategorija časopisa: M21, impakt faktor: 1.947.


    a.54. S. Savovic, A. Djordjevich, G. Ristic, "Numerical solution of the transport equation describing the radon transport from subsurface soil to buildings", Radiation Protection Dosimetry, 150 (2), 213–216, 2012; doi: 10.1093/rpd/ncr397; kategorija časopisa: M22, impakt faktor: 0.966.


    a.55. M. Todorović, N.D. Vasović, G.S. Ristić, "A system for gas electrical breakdown time delay measurements based on a microcontroller", Measurement Science & Technology, 23 (1) 015901 (9pp),  2012; doi: 10.1088/0957-0233/23/1/015901; kategorija časopisa: M21, impakt faktor: 1.350.


    a.56. N.D. Vasović, G.S. Ristić, "A new microcontroller-based RADFET dosimeter reader", Radiation Measurements 47 (4), 272-276, April 2012;


    http://dx.doi.org/10.1016/j.radmeas.2012.01.017; kategorija časopisa: M22, impakt faktor: 1.019


    a.57. N.D. Vasović, G.S. Ristić, "A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs", Measurement, 45, 1922–1926, 2012.


    http://dx.doi.org/10.1016/j.measurement.2012.03.011; kategorija časopisa: M22, impakt faktor: 0.853.


    a.58. D. Sokolovic, B. Djordjevic, G. Kocic, P. Babovic, G. Ristic, Z. Stanojkovic, D.M. Sokolovic, A. Veljkovic, A. Jankovic, Z. Radovanovic, "Melatonin effect on body mass and behaviour of rats during exposure to microwave radiation from mobile phone", Bratislava Medical Journal, 113 (5), 265-269, 2012; doi:10.4149/BLL_2012_062; kategorija časopisa: M23, impakt faktor: 0.345.


    a.59. G.S. Ristić, N.D. Vasović, A.B. Jakšić, "The fixed oxide traps modelling during isothermal and isochronal annealing of irradiated RADFETs", Journal of Physics D: Applied Physics, 45, 305101 (11pp), 2012; doi: 10.1088/0022-3727/45/30/305101; kategorija časopisa: M21, impakt faktor: 2.109.


    a.60. M.S. Andjelković, G.S. Ristić, Feasibility study of a current mode gamma radiation dosimeter based on a commercial PIN photodiode and a custom made auto-ranging electrometer, Nuclear Technology & Radiation Protection, 28 (1), 73-83, 2013; doi: 10.2298NTRP/1301073A; kategorija časopisa: M22, impakt faktor: 1.000


    a.61. Č. A. Maluckov, M. K. Radović, S.A. Rančev, G.S. Ristić, J.P. Karamarković, "The electrical breakdown time delay distributions in “GE 155/500” gas diode (starter)", Romanian Reports in Physics, 65 (4), 1373–1383, 2013; kategorija časopisa: M23, impakt faktor: 1.123


    a.62. G.S. Ristic, M.S. Andjelkovic, A.B. Jaksic, "The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses", Applied Radiation and Isotopes, 102, 29-34, 2015 (M21) DOI: 10.1016/j.apradiso.2015.04.009


    a.63. M.S. Andjelković, G.S. Ristić, A.B. Jakšić, "Using RADFET for the real-time measurement of gamma radiation dose rate", Measurement Science & Technology, 26 (2), 2015 (M21)


    DOI: 10.1088/0957-0233/26/2/025004


    a.64. M.S. Andjelković, G.S. Ristić, "Current mode response of phototransistors to gamma radiation", Radiation Measurements, 75, 29-38, 2015 (M21) DOI: 10.1016/j.radmeas.2015.03.005


    a.65. D.T. Sokolovic, B.S. Djordjevic, G.M. Kocic, T.J. Stoimenov, Z.A. Stanojkovic, D.M. Sokolovic, A.R. Veljkovic, G.S. Ristic, M. Despotovic, D. Milisavljevic, R.J. Jankovic, I.I. Binic, "The Effects of Melatonin on Oxidative Stress Parameters and DNA Fragmentation in Testicular Tissue of Rats Exposed to Microwave Radiation", Advances in Clinical and Experimental Medicine, 24 (3), 429-436, 2015 (M23)


    DOI: 10.17219/acem/43888


    a.66. M.S. Andjelković, V. Petrović, Z. Stamenković, G.S. Ristić, G.S. Jovanović, "Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch", Journal of Electronic Testing-Theory and Applications, 31 (3), 275-289, 2015 (M23)


    DOI: 10.1007/s10836-015-5529-1


    a.67. G.S. Ristić, M.S. Andjelković, S. Savović, "The isochronal annealing of irradiated n-channel power VDMOSFETs", Nuclear Instruments and Methods in Physics Research B, 366, 171–178, 2016 (M21) DOI: 10.1016/j.nimb.2015.11.003


    a.68. Č.A. Maluckov, M.K. Radović, G.S. Ristić, "Experimental investigations of commercial gas discharge tube “Osram St 111” using time lag measuring method", Electrical Engineering, 2016 (M2?) DOI: 10.1007/s00202-016-0391-4

  • Radovi u ostalim časopisima:

    b.1. G. S. Ristić, M. M. Pejović, A. B. Jakšić, “Isothermal and isochronal annealing of γ-ray irradiated-channel power VDMOS transistor”, Facta Universitatis, series: Physics, Chemistry and Technology, 2 (1), pp. 47-61 (1999).


    b.2. M. M. Pejović, G. S. Ristić, J.P. Karamarković, “Electrical breakdonwn time delay in gases at low pressures”, Facta Universitatis, series: Physics, Chemistry and Technology, 2 (2), pp. 63-78 (2000).

  • Radovi na naučnim skupovima međunarodnog značaja:

    c.1. M. Pejović J. Živković, G. Ristić, "Determination of Formative Time in Nitrogen for Small Values of the Afterglow Period", Proc. XVI Summer School and International Symposium on the Physics of Ionized Gases (16th SPIG), pp. 248-250, Belgrade, 1993.


    c.2. M. M. Pejović, G. Ristić, C. Lj. Marković, S. Mekić, "Laue distribution of time delay of electrical breakdown in nitrogen for 1 % overvoltage", Proc. XVII Summer School and International Symposium on the Physics of Ionized Gases (17th SPIG), pp. 240-243, Belgrade, 1994.


    c.3. A. Jakšić, G. Ristić, M. Pejović, “Effects of gamma-irradiation and postirradiation thermal annealing in power VDMOSFETs”, Proc. 20th International Conference on Microelectronics (MIEL’95), 1, pp. 241-246, Niš, September 1995.


    c.4. A. Jakšić, G. Ristić, M. Pejović, “Latent interface-trap generation during thermal annealing of gamma-ray irradiated power VDMOSFETs”, Proc. 18th International Semiconductor Conference (CAS’95), pp. 215-218, Sinaia, Romania, October 1995.


    c.5. M. M. Pejović, G. Ristić, C. Lj. Marković and S. Mekić, "Efficiency of different secondary emission mechanisms in initiation of electrical breakdown", Proc. XVIII Summer School and Internation. Symposium on the Physics of Ionized Gases (18th SPIG), pp. 348-351, Kotor, 1996.


    c.6. A. Jakšić, M. Pejović, G. Ristić, "Post-irradiation effects in commercial power VDMOSFETs", Proc. 4th International Seminar on Power Semiconductor (ISPS'98), Prague, September 1998.


    c.7. M. M. Pejović, G. S. Ristić, J. P. Karamarković, "Kinetics of nitrogen ions and atoms in afterglow", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (19th SPIG), pp. 433-436, Zlatibor, 1998.


    c.8. M. M. Pejović, G. S. Ristić, J. P. Karamarković, "Kinetics of nitrogen ions and atoms in afterglow", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (19th SPIG), pp. 433-436, Zlatibor, 1998.


    c.9. J. P. Karamarković, M. M. Pejović, Z. M. Stojiljković, G. S. Ristić, "Distribution of time delay in krypton-filled tube at 2. mbar", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (19th SPIG), pp. 437-440, Zlatibor, 1998.


    c.10. G. S. Ristić, A. B. Jakšić, M. M. Pejović, "Latent interface-trap buildup in power VDMOSFETs: new experimental evidence and numerical simulation", 5th European Confer. Radiations and their Effects on Devices and Systems (RADECS '99),  pp. H14 - H17 , 1999.


    c.11. A. B. Jakšić, M. M. Pejović, G. S. Ristić, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs ", 5th European Confer. Radiations and their Effects on Devices and Systems (RADECS '99),  pp. K17-K20 , 1999.


    c.12. A.B. Jakšić, M.M. Pejović, G.S. Ristić, “Post-irradiation behaviour of commercial power VDMOSFETs”, Proc. 22th International Conference on Microelectronics (MIEL 2000), 1, pp. 343-346, Niš, 2000.


    c.13. A. Jakšić, G. Ristić, M. Pejović, A. Mohammadzadeh, W. Lane “Characterisation of radiation response of 400 nm implanted gate oxide RADFETs”, Proc. 23th International Conference on Microelectronics (MIEL 2002), 2, pp. 727-730, Niš, 2002.


    c.14. G. Ristić, M. Pejović, A. Jakšić, "Comparative study of the effects of irradiation and high electric field stress in commercial n-channel power VDMOSFETs", Proc. RADECS 2002 Workshop, Radiation Effects on Devices and Systems,  pp. 33-35,  Padova, Italy, 19-20 September 2002.


    c.15. E. N. Živanović, M. M. Pejović, G. S. Ristić, "Influence of gamma and UV radiations on memory curve of nitrogen-filled tube", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), pp. 345-348, National park “Tara”, Serbia, 23-27 August, 2004.


    c.16. J. P. Karamarković, G. S. Ristić, M. M. Pejović, E. N. Živanović, N. T. Nešić, "Modeling of memory curves in nitrogen-filled diode with copper and molybdenum electrodes", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), pp. 353-356, National park “Tara”, Serbia, 23-27 August, 2004.


    c.17. M. M. Pejović, M. M. Pejović, G. S. Ristić, "A breakdown voltage measurement of neon-filled tube using digital system", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), pp. 409-412, National park “Tara”, Serbia, 23-27 August, 2004.


    c.18. W. Zhao, G. Ristić, J. A. Rowlands, “Inherent imaging performance of cesium iodide scintillators”, Proc. SPIE 5368, p. 211-220, 2004.


    c.20. E.V. Jelenković, S. Jha, K.Y. Tong, G.S. Ristić, "Positive bias temperature stress in irradiated and non-irradiated thin film transistors (TFTs)", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), pp. 79-80, Niš, Serbia, 2012.


    c.21. D. Krstić,  D. Nikezić, G.S. Ristić, "Calculation of effective dose in ORNL phantoms series due to natural radioactivity in building materials", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), pp. 51-53, Niš, Serbia, 2012.


    c.22. D. Krstić,  D. Nikezić, G.S. Ristić, "Modeling a thyroid of an ORNL phantom as an input file for MCNP5/X", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), pp. 55-57, Niš, Serbia, 2012.


    c.23. M. Anđelković, G.S. Ristić, "A pulse mode gamma radiation monitoring system", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), pp. 109-112, Niš, Serbia, 2012.


    c.24. M. Anđelković, G.S. Ristić, "An autoranging electrometer for current mode dosimetry", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), pp. 113-116, Niš, Serbia, 2012.


    c.25. U. Jovanović, G. S. Ristić, "Realization of radiation low-cost multichannel analyzer", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), pp. 117-120, Niš, Serbia, 2012.


    c.26. M. Todorović, G. S. Ristić, "A new heating system for thermoluminescence reader", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), pp. 121-124, Niš, Serbia, 2012.


    c.26. G.S. Ristić, M. Anđelković, A.B. Jakšić, "Sensitivity of pMOS dosimeters with various gate oxide thickness", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), pp. 125-128, Niš, Serbia, 2012.


    c.27. N. Vasovic, G. Ristic, Z. Stamenkovic, "A switching system for reliable electrical characterization of MOSFETs", In the Proceedings of 16th International Symposium on the IEEE International Symposium on Design and Diagnostics  of Electronic Circuits and Systems (DDECS), Warsaw, Poland, 2014


    c.28. M. Andjelkovic, V. Petrovic, Z. Stamenkovic, G. Ristic, G. Jovanovic, "Simulation-based analysis of the single event response of a single event latchup protection switch," In the Proceedings of the IEEE International Symposium on Design and Diagnostics  of Electronic Circuits and Systems (DDECS), Belgrade, Serbia, 2015.


    c.29.  M. Andjelkovic, A. Ilic, V. Petrovic, M. Nenadovic, Z. Stamenkovic, G. Ristic, “SET Response of a SEL Protection Switch for 130 and 250 nm CMOS Technologies,” 22nd IEEE International Symposium on On-line Testing and Robust System Design (IOLTS), Sant Feliu de Guixols, Spain, 4 – 6 July, 2016. DOI: 10.1109/IOLTS.2016.7604695;   link: http://ieeexplore.ieee.org/document/7604695/

  • Radovi na domaćim naučnim skupovima:

    e.1. G. Ristić, S. Golubović, M. Pejović, "Spontani oporavak ozračenih MOS tranzistora sa Al ‑ gejtom", Zbornik radova I srpske konferencije o mikroelektronici i optoelektronici, MIOPEL, 1. 2. 4., str. 1 - 5, Beograd, 1992.


     e.2. S. Golubović, G. Ristić, S. \orić, N. Stojadinović, "Efekti gama-zračenja kod VDMOS tranzistora snage", Zbornik radova I srpske konferencije o mikroelektronici i optoelektronici, MIOPEL, 1. 2. 5., str. 1 - 5, Beograd, 1992.


     e.3. G. Ristić, S. Golubović, M. Pejović, "Uticaj UV-zračenja i povišene temperature na radijacione defekte kod NMOS tranzistora", Zbornik radova XXXVII konferencije ETANA-a, sveska IX, str. 99-104, Beograd, 1993.


     e.4. S. Golubović, G. Ristić, M. Pejović, M. Odalović, "Termički oporavak NMOS tranzistora ozračenih gama zračenjem", Zbornik radova XXXVII konferencije ETANA‑a, sveska IX, str. 105-109, Beograd, 1993.


     e.5. M. Pejović, J. Živković, G. Ristić, "Određivanje vremena formiranja pražnjenja u cevima punjenim azotom korišćenjem statističkih metoda", Zbornik radova XXXVII konferencije ETANA-a, sveska IX, str. 185-190, Beograd, 1993.


     e.6. A. Jakšić, G. Ristić, M. Pejović, "Uticaj polarizacije gejta na efekte -zračenja kod VDMOS tranzistora snage", Zbornik radova XXXVIII konferencije ETRAN-a, sveska IV, str. 23-24, Niš, 1994.


     e.7. M. Pejović, G. Ristić, S. Golubović, "Oporavak ozračenih VDMOS tranzistora snage na povišenoj temperaturi", Zbornik radova XXXVIII konferencije ETRAN-a, sveska IV, str. 25-26, Niš, 1994.


     e.8. G. Ristić, M. Pejović, "Radijaciono osetqivi PMOS tranzistor kao senzor i dozimetar jonizujućeg zračenja", Zbornik radova IX Kongresa fizičara Jugoslavije, str. 753-756,  Petrovac, maj 1995.


     e.9. A. Jakšić, G. Ristić, "Uticaj gama-zračenja i oporavka na napon praga VDMOS tranzistora snage", Zbornik radova XXXIX Konferencije ETRAN-a, sveska IV, str. 136-138, Zlatibor, jun 1995.


    e.10. M. Pejović, G. Ristić, "Temperaturska zavisnost oporavka ozračenih n-kanalnih VDMOS tranzistora snage", Zbornik radova XXXIX Konferencije ETRAN-a, sveska IV, str. 143-146 , Zlatibor, jun 1995.


    e.11. M. M. Pejović, G. S. Ristić, C. Q. Marković, S. Mekić, "Određivanje vremena formiranja pražnjenja u azotu iz Laue-ovih raspodela", Zbornik radova IX Kongresa fizičara Jugoslavije, str. 429-431, Petrovac, maj 1995.


    e.12. A. Jakšić, G. Ristić, M. Pejović, "Uticaj polarizacije gejta na odžarivanje ozračenih VDMOS tranzistora snage", Zbornik radova XL Konferencije ETRAN-a, str. 90-93, Budva, jun 1996.


    e.13. S. Raković, A. Jakšić, G. Ristić, M. Pejović, "Ponašanje PMOS tranzistora male geometrije tokom ozračivanja i kasnijeg odžarivanja na različitim temperaturama", Zbornik radova XLI Konferencije ETRAN-a, str. 65-68, Zlatibor, jun 1997.


    e.14. M.M. Pejović, J.P. Karamarković, G. S. Ristić, "Statistička analiza vremena kašnjenja u azotu na pritisku 1.3 mbar i prenaponu od 3%", Zbornik radova X Kongresa fizičara Jugoslavije, Knjiga II, str. 607-610,  Vrnjačka Banja,  2000.


    e.15. G.S. Ristić, A.B. Jakšić, M.M. Pejović, "Osetljivost dozimetrijskih PMOS tranzistora na X-zračenje", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-157 - 8-160, Petrovac na Moru, 3-5. jun 2004.


    e.16. G.S. Ristić, M.M. Pejović, A.B. Jakšić "Naprezanje VDMOS tranzistora snage jakim električnim poljem", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-161 - 8-164, Petrovac na Moru, 3-5. jun 2004.


    e.17. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Termalni oporavak VDMOS tranzistora snage nakon naprezanja jakim električnim poljem", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-165 - 8-168, Petrovac na Moru, 3-5. jun 2004.


    e.18. J.P. Karamarković, G.S. Ristić, N.T. Nešić, "Modelovanje memorijskih krivih u azotu na 1.33 mbar", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 3-367 - 3-370, Petrovac na Moru, 3-5. jun 2004.


    e.19. S. Raković, G. Ristić, M. Pejović, "Uticaj povišene temperature na ponašanje VDMOS tranzistora snage tokom naprezanja jakim električnim poqem", Zbornik radova XLVIII Konferencije za ETRAN, IV Sveska, str. 128-131, Čačak, 6-10 jun 2004.


    e.20. M. Anđelković, U. Jovanović, G. S. Ristić, Realizacija dva pojačavača na bazi transimpedansnog pojačanja za merenje niskih nivoa jednosmernih struja u dozimetrijskim aplikacijama,  XXVI Simpozijum Društva za zaštitu od zračenja Srbije i Crne Gore, Tara, 2011, Zbornik radova (kategorija: M63).


    e.21. U. Jovanović, M. Anđelković, G. S. Ristić, Realizacija dva pojačavača na bazi integracionog pojačanja za merenje niskih nivoa jednosmernih struja u dozimetrijskim aplikacijama, XXVI Simpozijum Društva za zaštitu od zračenja Srbije i Crne Gore, Tara, Zbornik radova, 2011 (kategorija: M63).


    e.22. M. Andjelkovic, U. Jovanovic, G. S. Ristic, Comparative Analysis of Two Techniques for Measuring Low Level Photocurrents, IEEESTEC – 4th International Students’ Projects Conference, Nis, 2011 (kategorija: M63).

Poslednji put izmenjeno četvrtak, 02 mart 2017 13:27