Naučne publikacije akademskog osoblja

Ukoliko želite, kartone naučnog osoblja ovog fakulteta možete da pogledate i na sajtu Elektronskog fakulteta.

NAPOMENA

Za tačnost unetih podataka o publikacijama, naučnim i umetničkim referencama odgovorni su autori.
Datum kreiranja: 02.03.2017.

Goran Ristić

Dodatne informacije

  • Lični podaci

  • Mesto rođenja: Niš
  • Obrazovanje

  • Fakultet: Prirodno-matematički
  • Odsek / Grupa / Smer: Fizika
  • Spisak publikacija

  • Monografije i poglavlja u monografijama:

    1. M.S. Andjelković, G.S. Ristić, "Physical aspects of radiofrequency radiation dosimetry", In book: Dosimetry in Bioelectromagnetics, CRC Press, Taylor&Francis Group, 119-138, 2017. https://doi.org/10.1201/9781315154572-7

  • Knjige i udžbenici:

    1. M. M. Pejović, G. S. Ristić, S. M. Golubović, "Rešeni zadaci za pripremu prijemnog ispita iz fizike", Elektronski fakultet, Niš, 2000.


    2. M. M. Pejović, S. M. Golubović, G. S. Ristić, A. B. Jakšić, "Opšti kurs fizike - Zbirka rešenih zadataka", Elektronski fakultet, Niš, 2002.


    3. G. S. Ristić, "Uvod u kvantnu i statističku fiziku", Elektronski fakultet, Niš, 2008.

  • Radovi u časopisima sa IMPACT faktorom:

    1. G. Ristić, S. Golubović, M. Pejović, "pMOS transistors for dosimetric application", Electronics Letters, 29 (18), 1644-1646, 1993. https://doi.org/10.1049/el:19931095


    2. M. Pejović, G. Ristić, S. Golubović, "A comparison between thermal annealing and UV -radiation annealing of g - irradiated NMOS transistors", Physica Status Solidi (a), 140, K53-K57, 1993. https://doi.org//10.1002/pssa.2211400140


    3. M. Pejović, S. Golubović, G. Ristić, M. Odalović, "Annealing of gamma-irradiated Al ‑ gate NMOS transistors", Solid-State Electronics, 37 (1), 215-216, 1994. https://doi.org/10.1016/0038-1101(94)90135-X


    4. M. Pejović, S. Golubović, G. Ristić, M. Odalović, "Temperature and gate bias effects on gamma - irradiated Al ‑ gate metal ‑ oxide ‑ semiconductor transistors", Japanese Journal of Applied Physics, 33 (2), 986-990, 1994. https://doi.org/10.1143/JJAP.33.986


    5. G. Ristić, S. Golubović, M. Pejović, "pMOS dosimeter with two-layer gate oxide operated at zero and negative bias", Electronics Letters, 30 (4), 295-296, 1994. https://doi.org/10.1049/el:19940196  


    6. S. Golubović, G. Ristić, M. Pejović, S. Dimitrijev, "The role of interface traps in rebound mechanisms", Physica Status Solidi (a), 143 (2), 333-339, 1994. https://doi.org/10.1002/pssa.2211430217


    7. G. Ristić, S. Golubović, M. Pejović, "P-channel metal-oxide-semiconductor dosimeter fading dependencies on gate bias and oxide thickness", Applied Physics Letters, 66 (1), 88-89, 1995. https://doi.org/10.1063/1.114155


    8. N. Stojadinović, M. Pejović, S. Golubović, G. Ristić, V. Davidović, S. Dimitrijev, "Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs", Electronics Letters, 31 (6), 497-498, 1995. http://doi.org/10.1049/el:19950302


    9. M. Pejović, S. Golubović, G. Ristić, "Temperature-induced rebound in Al-gate NMOS transistors", IEE Proceedings-G: Circuits, Devices and Systems, 142 (6), 413-416, 1995. http://doi.org/10.1049/ip-cds:19952085


    10. A. Jakšić, G. Ristić, M. Pejović, "Rebound effect in power VDMOSFETs due to latent interface-trap generation", Electronics Letters, 31 (14), 1198-1199, 1995. https://doi.org/10.1049/el:19950818    


    11. M. Pejović, J. Živković, Č. Milosavljević, G. Ristić, "Formative time determination in nitrogen-filled tube using statistical methods", Japanese Journal of Applied Physics (Part 1), 34 (3), 1652-1656, 1995. https://doi.org/10.1143/JJAP.34.1652


    12. A. Jakšić, G. Ristić, M. Pejović, “Analysis of the processes in power VDMOSFETs during gamma-ray irradiation and subsequent thermal annealing”, Physica Status Solidi (a), 155 (2), 371-379, 1996. https://doi.org/10.1002/pssa.2211550210


    13. G. Ristić, S. Golubović, M. Pejović, "Sensitivity and fading of pMOS dosimeters with thick gate oxide", Sensors and Actuators: A. Physical, A 51 (2-3), 153-158, 1996. https://doi.org/10.1016/0924-4247(95)01211-7


    14. M.M. Pejović, V.Lj. Marković, G.S. Ristić, S. Mekić, "Determination of formative time of electrical breakdown in nitrogen-filled tube", IEE Proceedings - Science, Measurement and Technology, 143 (6), 413-415, 1996. https://doi.org/10.1049/ip-smt:19960650


    15. M. Pejović, G. Ristić, A. Jakšić, "Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing", Applied Surface Science, 108 (1), 141-148, 1997. https://doi.org/10.1016/S0169-4332(96)00573-9


    16. M. Pejović, G. Ristić, "Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures", Solid-State Electronics, 41 (5), 715-720, 1997. https://doi.org/10.1016/S0038-1101(96)00252-3


    17. M. Pejović, A. Jakšić, G. Ristić, B. Baljošević, "Processes in n-channel MOSFETs during postirradiation thermal annealing", Radiation Physics and Chemistry, 49 (5), 521-525, 1997. https://doi.org/10.1016/S0969-806X(96)00181-8


    18. G. Ristić, A. Jakšić, M. Pejović, “pMOS dosimetric transistors with two-layer gate oxide”, Sensors and Actuators: A. Physical, A 63 (2), 129-134, 1997. https://doi.org/10.1016/S0924-4247(97)01592-6


    19. M.M. Pejović, V.Lj. Marković, G.S. Ristić, S. Mekić, "Efficiency of copper and gold cathode in initiation of secondary emission in nitrogen-filled tube”, VACUUM - Surface Engineering, Surface Instrumentation and Vacuum Technology, 48 (6), 531-534, 1997. https://doi.org/10.1016/S0042-207X(97)00029-8


    20. G.S. Ristić, M. Pejović, A. Jakšić, “Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing'', Journal of Applied Physics, 83 (6), 2994-3000, 1998. https://doi.org/10.1063/1.367055


    21. G.S. Ristić, M.M. Pejović, A.B. Jakšić, “Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases”, Microelectronic Engineering, 45 (3), 1365-1371, 1998. https://doi.org/10.1016/S0167-9317(97)00193-7


    22. A. Jakšić, M. Pejović, G. Ristić, S. Raković, “Latent interface-trap generation in commercial power VDMOSFETs”, IEEE Trans. Nuclear Science, 45 (3), 1365-1371, 1998. https://doi.org/10.1109/23.685208


    23. M. Pejović, A. Jaksić, G. Ristić, "The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140 oC", Journal of Non-Crystalline Solid, 240, 182-192, 1998. https://doi.org/10.1016/S0022-3093(98)00718-2


    24. M.M. Pejović, J.P. Karamarković, G.S. Ristić, "The application of time delay method for analysis of processes which initiate electrical breakdown in 1.3 mbar nitrogen", IEEE Transaction of Plasma Science, 26 (6), 1733-1737, 1998. https://doi.org/10.1109/27.747893


    25. M.M. Pejović, G. S. Ristić, Č.S. Milosavljević, P.G. Vuković, J.P. Karamarković, "Statistical reliability of time delay values for nitrogen-filled tube at pressure of 1.3 mbar", VACUUM- Surface Engineering, Surface Instrumentation and Vacuum Technology, 53 (3-4), 435-440, 1999. https://doi.org/10.1016/S0042-207X(98)00486-2


    26. M.M. Pejović, G.S. Ristić, Z.Lj. Petrović, "Influence of light from nitrogen-filled lamps on time delay of electrical breakdown in nitrogen-filled tubes", Journal of Physics D: Applied Physics, 32 (13), 1489-1493, 1999.  https://doi.org/10.1088/0022-3727/32/13/308


    27. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors", Journal of Applied Physics, 87 (7), 3468-3477, 2000. https://doi.org/10.1063/1.372368


    28. A.B. Jakšić, G. S. Ristić, M.M. Pejović, "New experimental evidence of latent interface-trap build up in power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), 580-586, 2000. https://doi.org/10.1109/23.856483  


    29. A.B. Jakšić, M.M. Pejović, G.S. Ristić, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), 659-666, 2000. https://doi.org/10.1109/23.856495


    30. A.B. Jakšić, M.M. Pejović, G.S. Ristić, "Properties of latent interface-trap building in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments", Applied Physics Letters, 77 (25), 4220-4222, 2000. https://doi.org/10.1063/1.1336159


    31. M.M. Pejović, G.S. Ristić, "Nitrogen-filled tube as a sensor of ionizing radiation", Review of Scientific Instruments, 71 (6), 2377-2379, 2000. https://doi.org/10.1063/1.1150662


    32. M.M. Pejović, G.S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method" Journal of Physics D: Applied Physics, 33 (21), 2786-2790, 2000. https://doi.org/10.1088/0022-3727/33/21/318


    33. M.M. Pejović, G.S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in argon using the time delay method", Physics of Plasmas, 9 (1), 364-370, 2002. https://doi.org/10.1063/1.1428325


    34. M.M. Pejović, G.S. Ristić, "Memory effects in argon, nitrogen and hydrogen", IEEE Transaction of Plasma Science, 30 (3), 1315-1319, 2002. https://doi.org/10.1109/TPS.2002.802143


    35. M.M. Pejović, G.S. Ristić, J.P. Karamarković, "Electrical breakdown in low pressure gases", Journal of Physics D: Applied Physics, Topical Review, 35, R91-R103, 2002. https://doi.org/10.1088/0022-3727/35/10/201


    36. M.M. Pejović, G.S. Ristić, Č.S. Milosavljević, and M.M. Pejović, "Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglow", Journal of Physics D: Applied Physics, 35 (20), 2536-2542, 2002. https://doi.org/10.1088/0022-3727/35/20/312


    37. A. Jakšić, G. Ristić, M. Pejović, A. Mohammadzadeh, C. Sudre, and W. Lane, "Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs”, IEEE Trans. Nuclear Science, 49 (3), 1356-1363, 2002. https://doi.org/10.1109/TNS.2002.1039667


    38. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs”, Applied Surface Science, 220 (1-4), 181-185, 2003. https://doi.org/10.1016/S0169-4332(03)00818-3


    39. W. Zhao, G. Ristić, J.A. Rowlands, "X-ray imaging performance of structured cesium iodide scintillators”, Medical Physics, 31 (9), 2594-2605, 2004. https://doi.org/10.1118/1.1782676


    40. M.M. Pejović, M.M. Pejović, G.S. Ristić, "Gamma and UV radiation effects on breakdown voltage of neon-filled tube", IEEE Transaction of Plasma Science, 33 (3), 1047-1052, 2005. https://doi.org/10.1109/TPS.2005.848601


    41. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Fowler-Nordheim high electric field stress of power VDMOSFETs", Solid-State Electronics, 49 (7), 1140-1152, 2005. https://doi.org/10.1016/j.sse.2005.05.002


    42. G. S. Ristić, M.M. Pejović, A.B. Jakšić, "Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing", Applied Surface Science, 252 (8), 3023-3032, 2006. https://doi.org/10.1016/j.apsusc.2005.05.005


    43. A.R. Lubinsky, W. Zhao, G. Ristic, J.A. Rowlands, “Screen optics effects on detective quantum efficiency in digital radiography: Zero-frequency effects”, Medical Physics, 33 (5), 1499-1509, 2006. https://doi.org/10.1118/1.2188082


    44. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress", Journal of Non-Crystalline Solid, 353 (2), 170-179, 2007. https://doi.org/10.1016/j.jnoncrysol.2006.09.020


    45. G.S. Ristić, "Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors", Journal of Physics D: Applied Physics, Topical Review, 41, 023001 (19pp), 2008. https://doi.org/10.1088/0022-3727/41/2/023001


    46. M.M. Pejović, J.P. Karamarković, G.S. Ristić, M.M. Pejović, "Analysis of electrically neutral active particles loss in afterglow in krypton at 2.6 mbar pressure", Physics of Plasmas, 15 (1), 013502 - 1-7, 2008. https://doi.org/10.1063/1.2817064


    47. S. Jha, E.C. Jelenković, M.M. Pejović, G.S. Ristić, M. Pejović, K.Y. Tong, C. Surya, I. Bello and W.J. Zhang, "Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays", Microelectronic Engineering, 86 (1), 37-40, 2009. https://doi.org/10.1016/j.mee.2008.09.001


    48. T.N. Nešić, G.S. Ristić, J.P. Karamarković, M.M. Pejović, "Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve", Journal of Physics D: Applied Physics, 41 (22), 225205 (10 pp), 2008. https://doi.org/10.1088/0022-3727/41/22/225205


    49. G.S. Ristić, "Thermal and UV annealing of irradiated pMOS dosimetric transistors", Journal of Physics D: Applied Physics, 42 (13), 135101 (12pp), 2009. https://doi.org/10.1088/0022-3727/42/13/135101


    50. E.V. Jelenkovic, G.S. Ristic, M.M. Pejovic, M.M. Jevtic, K.J. Shrawan, M. Videnovic-Misic, M. Pejovic, and K.Y. Tong, "Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation", Journal of Physics D: Applied Physics, 44 (1), 015101 (7 pp), 2011. https://doi.org/10.1088/0022-3727/44/1/015101


    51. G.S. Ristić, N.D. Vasović, "Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 oC", Semiconductor Science & Technology, 49 (7), 1140-1152, 2011. https://doi.org/10.1088/0268-1242/26/8/085019


    52. G.S. Ristić, N.D. Vasović, M. Kovačević, A.B. Jakšić, "The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)", Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atom, 269, 2703-2708, 2011. https://doi.org/10.1016/j.nimb.2011.08.015


    53. G.S. Ristić, "Defect behaviors during high electric field stress of p-channel power MOSFETs ", IEEE Trans. on Device and Materials Reliability, 12 (1), 94-100, 2012. https://doi.org/10.1109/TDMR.2011.2168399


    54. S. Savovic, A. Djordjevich, G. Ristic, "Numerical solution of the transport equation describing the radon transport from subsurface soil to buildings", Radiation Protection Dosimetry, 150 (2), 213-216, 2012. https://doi.org/10.1093/rpd/ncr397


    55. M. Todorović, N.D. Vasović, G.S. Ristić, "A system for gas electrical breakdown time delay measurements based on a microcontroller", Measurement Science & Technology, 23 (1) 015901 (9pp), 2012. https://doi.org/10.1088/0957-0233/23/1/015901


    56. N.D. Vasović, G.S. Ristić, "A new microcontroller-based RADFET dosimeter reader", Radiation Measurements, 47 (4), 272-276, 2012. https://doi.org/10.1016/j.radmeas.2012.01.017


    57. N.D. Vasović, G.S. Ristić, "A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs", Measurement, 45, 1922-1926, 2012. https://doi.org/10.1016/j.measurement.2012.03.011


    58. D. Sokolovic, B. Djordjevic, G. Kocic, P. Babovic, G. Ristic, Z. Stanojkovic, D.M. Sokolovic, A. Veljkovic, A. Jankovic, Z. Radovanovic, "The melatonin effect on body mass and behaviour of rats during exposure to microwave radiation from mobile phone", Bratislava Medical Journal, 113 (5), 265-269, 2012. https://doi.org/10.4149/BLL_2012_062


    59. G.S. Ristić, N.D. Vasović, A.B. Jakšić, "The fixed oxide traps modelling during isothermal and isochronal annealing of irradiated RADFETs", Journal of Physics D: Applied Physics, 45, 305101 (11pp), 2012. https://doi.org/10.1088/0022-3727/45/30/305101


    60. M.S. Andjelković, G.S. Ristić, Feasibility study of a current mode gamma radiation dosimeter based on a commercial PIN photodiode and a custom made auto-ranging electrometer, Nuclear Technology & Radiation Protection, 28 (1), 73-83, 2013. https://doi.org/10.2298/NTRP1301073A  


    61. Č.A. Maluckov, M.K. Radović, S.A. Rančev, G.S. Ristić, J.P. Karamarković, "The electrical breakdown time delay distributions in “GE 155/500” gas diode (starter)", Romanian Reports in Physics, 65 (4), 1373–1383, 2013.


    62. G.S. Ristic, M.S. Andjelkovic, A.B. Jaksic, "The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses", Applied Radiation and Isotopes, 102, 29-34, 2015. https://doi.org/10.1016/j.apradiso.2015.04.009 


    63. M.S. Andjelković, G.S. Ristić, A.B. Jakšić, "Using RADFET for the real-time measurement of gamma radiation dose rate", Measurement Science & Technology, 26 (2), 025004 (12pp), 2015. https://doi.org/10.1088/0957-0233/26/2/025004


    64. M.S. Andjelković, G.S. Ristić, "Current mode response of phototransistors to gamma radiation", Radiation Measurements, 75, 29-38, 2015. https://doi.org/10.1016/j.radmeas.2015.03.005


    65. D.T. Sokolovic, B.S. Djordjevic, G.M. Kocic, T.J. Stoimenov, Z.A. Stanojkovic, D.M. Sokolovic, A.R. Veljkovic, G.S. Ristic, M. Despotovic, D. Milisavljevic, R.J. Jankovic, I.I. Binic, "The effects of melatonin on oxidative stress parameters and DNA fragmentation in testicular tissue of rats exposed to microwave radiation", Advances in Clinical and Experimental Medicine, 24 (3), 429-436, 2015. https://doi.org/10.17219/acem/43888


    66. M.S. Andjelković, V. Petrović, Z. Stamenković, G.S. Ristić, G.S. Jovanović, "Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch", Journal of Electronic Testing-Theory and Applications, 31 (3), 275-289, 2015. https://doi.org/10.1007/s10836-015-5529-1


    67. G.S. Ristić, M.S. Andjelković, S. Savović, "The isochronal annealing of irradiated n-channel power VDMOSFETs", Nuclear Instruments and Methods in Physics Research B, 366, 171-178, 2016. https://doi.org/10.1016/j.nimb.2015.11.003


    68. Č.A. Maluckov, M.K. Radović, G.S. Ristić, "Experimental investigations of commercial gas discharge tube “Osram St 111” using time lag measuring method", Electrical Engineering, 99, 63-72, 2017. https://doi.org/10.1007/s00202-016-0391-4


    69. S. Ilić, A. Jevtić, S. Stanković, G. Ristić, "Floating-gate MOS transistor with dynamic biasing as a radiation sensor", Sensors, 20 (11), 3329, 2020. https://doi.org/10.3390/s20113329

  • Radovi u ostalim časopisima:

    1. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Isothermal and isochronal annealing of γ-ray irradiated-channel power VDMOS transistor", Facta Universitatis, series: Physics, Chemistry and Technology, 2 (1), 47-61, 1999.


    2. M.M. Pejović, G.S. Ristić, J.P. Karamarković, "Electrical breakdonwn time delay in gases at low pressures", Facta Universitatis, series: Physics, Chemistry and Technology, 2 (2), 63-78, 2000.


    3. D. Krstić, D. Zigar, D. Sokolović, B. Đinđić, B. Đorđević, M. Dunjić, G. Ristić, "The study of biological effects of electromagnetic mobile phone radiation on experimental animals by combining numerical modelling and experimental research", Microwave Review, 18 (2), 9-16, 2012.


    4 D. Sokolović, B. Djindjić, D. Krstić, V. Marković, G. Ristić, D.M. Sokolović, M. Golubović, B. Djordjević, M. Dunjić, D. Popović, T. Karuntanović, N. Tatar, P. Babović, "The effect of melatonin on the catabolism of polyamines in the rat thymus during the exposure to microwave radiation", Acta Medica Medianae, 57 (4), 4-21, 2018. https://doi.org/10.5633/amm.2018.0402

  • Radovi na naučnim skupovima međunarodnog značaja:

     


    1. M. Pejović J. Živković, G. Ristić, "Determination of Formative Time in Nitrogen for Small Values of the Afterglow Period", Proc. XVI Summer School and International Symposium on the Physics of Ionized Gases (16th SPIG), Belgrade, pp. 248-250, 1993.


    2. M. M. Pejović, G. Ristić, V. Lj. Marković, S. Mekić, "Laue distribution of time delay of electrical breakdown in nitrogen for 1 % overvoltage", Proc. XVII Summer School and International Symposium on the Physics of Ionized Gases (17th SPIG), Belgrade, pp. 240-243 1994.


    3. A. Jakšić, G. Ristić, M. Pejović, “Effects of gamma-irradiation and postirradiation thermal annealing in power VDMOSFETs”, Proc. 20th International Conference on Microelectronics (MIEL’95), Niš, 1, pp. 241-246, 1995. https://doi.org/10.1109/ICMEL.1995.500872


    4. A. Jakšić, G. Ristić, M. Pejović, “Latent interface-trap generation during thermal annealing of gamma-ray irradiated power VDMOSFETs”, Proc. 18th International Semiconductor Conference (CAS’95), Sinaia, Romania, pp. 215-218, 1995.


    5. M. M. Pejović, G. Ristić, V. Lj. Marković and S. Mekić, "Efficiency of different secondary emission mechanisms in initiation of electrical breakdown", Proc. XVIII Summer School and Internation. Symposium on the Physics of Ionized Gases (18th SPIG), Kotor, pp. 348-351, 1996.


    6. A. Jakšić, M. Pejović, G. Ristić, S. Raković, "Latent interface-trap generation in commercial power VDMOSFETs", Proc. 4th European Confer. Radiations and its Effects on Components and Systems (RADECS 1997), Cannes, France, pp. 36-42, 1997. https://doi.org/10.1109/RADECS.1997.698837


    7. A. Jakšić, M. Pejović, G. Ristić, "Post-irradiation effects in commercial power VDMOSFETs", Proc. 4th International Seminar on Power Semiconductor (ISPS'98), Prague, 1998.


    8. M. M. Pejović, G. S. Ristić, J. P. Karamarković, "Kinetics of nitrogen ions and atoms in afterglow", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (19th SPIG), Zlatibor, pp. 433-436, 1998.


    9. J. P. Karamarković, M. M. Pejović, Z. M. Stojiljković, G. S. Ristić, "Distribution of time delay in krypton-filled tube at 2. mbar", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (19th SPIG), Zlatibor, pp. 437-440, 1998.


    10. G. S. Ristić, A. B. Jakšić, M. M. Pejović, "Latent interface-trap buildup in power VDMOSFETs: new experimental evidence and numerical simulation", Proc. 5th European Confer. Radiations and their Effects on Devices and Systems (RADECS '99), pp. H14 - H17 , 1999.


    11. A. B. Jakšić, M. M. Pejović, G. S. Ristić, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs ", Proc. 5th European Confer. Radiations and their Effects on Devices and Systems (RADECS '99), pp. K17-K20 , 1999.


    12. A.B. Jakšić, M.M. Pejović, G.S. Ristić, "Post-irradiation behaviour of commercial power VDMOSFETs", Proc. 22nd International Conference on Microelectronics (MIEL 2000), Niš, 1, pp. 343-346, 2000. https://doi.org/10.1109/ICMEL.2000.840585


    13. A. Jaksic, G. Ristic, M. Pejovic, A. Mohammadzadeh, C. Sudre, W. Lane, "Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs", Proc. 6th European Confer. Radiations and its Effects on Components and Systems (RADECS 2001), Grenoble, France, 1 (2), pp. 57-65, 2001. https://doi.org/10.1109/RADECS.2001.1159259


    14. A. Jakšić, G. Ristić, M. Pejović, A. Mohammadzadeh, W. Lane “Characterisation of radiation response of 400 nm implanted gate oxide RADFETs”, Proc. 23th International Conference on Microelectronics (MIEL 2002), Niš, 2, pp. 727-730, 2002. https://doi.org/10.1109/MIEL.2002.1003360


    15. G. Ristić, M. Pejović, A. Jakšić, "Comparative study of the effects of irradiation and high electric field stress in commercial n-channel power VDMOSFETs", Proc. RADECS 2002 Workshop, Radiation Effects on Devices and Systems, Padova, Italy, pp. 33-35, 2002.


    16. E. N. Živanović, M. M. Pejović, G. S. Ristić, "Influence of gamma and UV radiations on memory curve of nitrogen-filled tube", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), National park “Tara”, Serbia, pp. 345-348, 2004.


    17. J. P. Karamarković, G. S. Ristić, M. M. Pejović, E. N. Živanović, N. T. Nešić, "Modeling of memory curves in nitrogen-filled diode with copper and molybdenum electrodes", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), National park “Tara”, Serbia, pp. 353-356, 2004.


    18. M. M. Pejović, M. M. Pejović, G. S. Ristić, "A breakdown voltage measurement of neon-filled tube using digital system", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), National park “Tara”, Serbia, pp. 409-412, 2004.


    19. W. Zhao, G. Ristić, J. A. Rowlands, “Inherent imaging performance of cesium iodide scintillators”, Proc. SPIE - The International Society for Optical Engineering, 5368 (1), p. 211-220, 2004. https://doi.org/10.1117/12.536865


    20. E.V. Jelenković, S. Jha, K.Y. Tong, G.S. Ristić, "Positive bias temperature stress in irradiated and non-irradiated thin film transistors (TFTs)", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 79-80, 2012.


    21. D. Krstić, D. Nikezić, G.S. Ristić, "Calculation of effective dose in ORNL phantoms series due to natural radioactivity in building materials", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 51-53, 2012.


    22. D. Krstić, D. Nikezić, G.S. Ristić, "Modeling a thyroid of an ORNL phantom as an input file for MCNP5/X", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 55-57, 2012.


    23. M. Anđelković, G.S. Ristić, "A pulse mode gamma radiation monitoring system", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 109-112, 2012.


    24. M. Anđelković, G.S. Ristić, "An autoranging electrometer for current mode dosimetry", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 113-116, 2012.


    25. U. Jovanović, G. S. Ristić, "Realization of radiation low-cost multichannel analyzer", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 117-120, 2012.


    26. M. Todorović, G. S. Ristić, "A new heating system for thermoluminescence reader", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 121-124, 2012.


    27. G.S. Ristić, M. Anđelković, A.B. Jakšić, "Sensitivity of pMOS dosimeters with various gate oxide thickness", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 125-128, 2012.


    28. Z. Stamenkovic, N.D. Vasovic, G.S. Ristic, , "Automatic and reliable electrical characterization of MOSFETs", Proc. 17th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS), Warsaw, Poland, pp. 262-265, 2014.https://doi.org/10.1109/DDECS.2014.6868804


    29. M. Andjelkovic, V. Petrovic, Z. Stamenkovic, G. Ristic, G. Jovanovic, "Simulation-based analysis of the single event response of a single event latchup protection switch," In the Proceedings of the IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS), Belgrade, Serbia, pp. 255-258, 2015. https://doi.org/10.1109/DDECS.2015.63


    30. M. Andjelkovic, A. Ilic, V. Petrovic, M. Nenadovic, Z. Stamenkovic, G. Ristic, “SET Response of a SEL Protection Switch for 130 and 250 nm CMOS Technologies,” Proc. 22nd IEEE International Symposium on On-line Testing and Robust System Design (IOLTS), Sant Feliu de Guixols, Spain, pp. 185-190, 2016. https://doi.org/10.1109/IOLTS.2016.7604695


    31. M.Ž. Jeremić, M. Matović, S. Pantović, D. Nikezić, G. Ristić, D. Krstić, "Compartment biokinetic model for 90Y-DOTATOC", Proc. the Fifth International Conference on Radiation and Applications in Various Fields of Researh (RAD 2017), RAD Conference Proceedings, 2, pp. 163-166, 2017. https://doi.org/10.21175/RadProc.2017.33

  • Radovi na domaćim naučnim skupovima:

    1. G. Ristić, S. Golubović, M. Pejović, "Spontani oporavak ozračenih MOS tranzistora sa Al ‑ gejtom", Zbornik radova I srpske konferencije o mikroelektronici i optoelektronici, MIOPEL, 1. 2. 4., str. 1 - 5, Beograd, 1992.


     2. S. Golubović, G. Ristić, S. \orić, N. Stojadinović, "Efekti gama-zračenja kod VDMOS tranzistora snage", Zbornik radova I srpske konferencije o mikroelektronici i optoelektronici, MIOPEL, 1. 2. 5., str. 1 - 5, Beograd, 1992.


     3. G. Ristić, S. Golubović, M. Pejović, "Uticaj UV-zračenja i povišene temperature na radijacione defekte kod NMOS tranzistora", Zbornik radova XXXVII konferencije ETANA-a, sveska IX, str. 99-104, Beograd, 1993.


     4. S. Golubović, G. Ristić, M. Pejović, M. Odalović, "Termički oporavak NMOS tranzistora ozračenih gama zračenjem", Zbornik radova XXXVII konferencije ETANA‑a, sveska IX, str. 105-109, Beograd, 1993.


     5. M. Pejović, J. Živković, G. Ristić, "Određivanje vremena formiranja pražnjenja u cevima punjenim azotom korišćenjem statističkih metoda", Zbornik radova XXXVII konferencije ETANA-a, sveska IX, str. 185-190, Beograd, 1993.


    6. A. Jakšić, G. Ristić, M. Pejović, "Uticaj polarizacije gejta na efekte g-zračenja kod VDMOS tranzistora snage", Zbornik radova XXXVIII konferencije ETRAN-a, sveska IV, str. 23-24, Niš, 1994.


    7. M. Pejović, G. Ristić, S. Golubović, "Oporavak ozračenih VDMOS tranzistora snage na povišenoj temperaturi", Zbornik radova XXXVIII konferencije ETRAN-a, sveska IV, str. 25-26, Niš, 1994.


     8. G. Ristić, M. Pejović, "Radijaciono osetqivi PMOS tranzistor kao senzor i dozimetar jonizujućeg zračenja", Zbornik radova IX Kongresa fizičara Jugoslavije, str. 753-756, Petrovac, maj 1995.


     9. A. Jakšić, G. Ristić, "Uticaj gama-zračenja i oporavka na napon praga VDMOS tranzistora snage", Zbornik radova XXXIX Konferencije ETRAN-a, sveska IV, str. 136-138, Zlatibor, jun 1995.


    10. M. Pejović, G. Ristić, "Temperaturska zavisnost oporavka ozračenih n-kanalnih VDMOS tranzistora snage", Zbornik radova XXXIX Konferencije ETRAN-a, sveska IV, str. 143-146 , Zlatibor, jun 1995.


    11. M. M. Pejović, G. S. Ristić, C. Q. Marković, S. Mekić, "Određivanje vremena formiranja pražnjenja u azotu iz Laue-ovih raspodela", Zbornik radova IX Kongresa fizičara Jugoslavije, str. 429-431, Petrovac, maj 1995.


    12. A. Jakšić, G. Ristić, M. Pejović, "Uticaj polarizacije gejta na odžarivanje ozračenih VDMOS tranzistora snage", Zbornik radova XL Konferencije ETRAN-a, str. 90-93, Budva, jun 1996.


    13. S. Raković, A. Jakšić, G. Ristić, M. Pejović, "Ponašanje PMOS tranzistora male geometrije tokom ozračivanja i kasnijeg odžarivanja na različitim temperaturama", Zbornik radova XLI Konferencije ETRAN-a, str. 65-68, Zlatibor, jun 1997.


    14. M.M. Pejović, J.P. Karamarković, G. S. Ristić, "Statistička analiza vremena kašnjenja u azotu na pritisku 1.3 mbar i prenaponu od 3%", Zbornik radova X Kongresa fizičara Jugoslavije, Knjiga II, str. 607-610, Vrnjačka Banja, 2000.


    15. G.S. Ristić, A.B. Jakšić, M.M. Pejović, "Osetljivost dozimetrijskih PMOS tranzistora na X-zračenje", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-157 - 8-160, Petrovac na Moru, 3-5. jun 2004.


    16. G.S. Ristić, M.M. Pejović, A.B. Jakšić "Naprezanje VDMOS tranzistora snage jakim električnim poljem", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-161 - 8-164, Petrovac na Moru, 3-5. jun 2004.


    17. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Termalni oporavak VDMOS tranzistora snage nakon naprezanja jakim električnim poljem", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-165 - 8-168, Petrovac na Moru, 3-5. jun 2004.


    18. J.P. Karamarković, G.S. Ristić, N.T. Nešić, "Modelovanje memorijskih krivih u azotu na 1.33 mbar", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 3-367 - 3-370, Petrovac na Moru, 3-5. jun 2004.


    19. S. Raković, G. Ristić, M. Pejović, "Uticaj povišene temperature na ponašanje VDMOS tranzistora snage tokom naprezanja jakim električnim poqem", Zbornik radova XLVIII Konferencije za ETRAN, IV Sveska, str. 128-131, Čačak, 6-10 jun 2004.


    20. U. Jovanović, M. Anđelković, G. S. Ristić, Realizacija dva pojačavača na bazi integracionog pojačanja za merenje niskih nivoa jednosmernih struja u dozimetrijskim aplikacijama, Zbornik radova XXVI Simpozijuma Društva za zaštitu od zračenja Srbije i Crne Gore, str. 344-348, Tara, 12-14. oktobar 2011.


    21. M. Anđelković, U. Jovanović, G. S. Ristić, Realizacija dva pojačavača na bazi transimpedansnog pojačanja za merenje niskih nivoa jednosmernih struja u dozimetrijskim aplikacijama, Zbornik radova XXVI Simpozijuma Društva za zaštitu od zračenja Srbije i Crne Gore, str. 349-353, Tara, 12-14. oktobar 2011.


    22. M. Andjelkovic, U. Jovanovic, G. S. Ristic, Comparative Analysis of Two Techniques for Measuring Low Level Photocurrents, Proc. IEEESTEC – 4th International Students’ Projects Conference, pp. 29-32, Nis, November 30, 2011.


     

  • Patenti:

    Učešće na naučno-tehnološkom projektima


    Međunarodni projekti:


    Rukovodilac projekata:


    2019 – Enhancement of scientific excellence and innovation potential in electronic instrumentation for ionizing radiation environments (ELICSIR), Horizon 2020 – TWINNING projekat, realizuje se sa partnerima iz Nemačke, Irske i Španije


    2014:   Verification and test of fault-tolerant circuits, bilateralni projekat, realizovan sa institutom  IHP, Nemačka


    2015:   Development of modeling and simulation framework for characterization of single event effects in CMOS integrated circuits, bilateralni projekat, realizovan sa institutom  IHP, Nemačka


    2015:   Study of silicon detectors and structures by using Scanning Transient Current (STC) Technique, bilateralni projekat, realizovan sa institutom Jozef Stefan, Slovenija


    Lokalni rukovodilac projekta:


    2008 – 2012 Joint research on various types of radiation dosimeters (RADDOS), FP7 – REGPOT projekat, Evropska komisija


    Nacionalni projekti


    Rukovodilac projekta:


    2011-  Zajednička istraživanja merenja i uticaja jonizujućeg i UV zračenja u oblasti medicine i zaštite životne sredine, uključeno je 11 fakulteta i 4 univerziteta iz Srbije


    Učesnik na projektima:


    2006-2010 Pretprobojni i posleprobojni procesi u gasovima na niskim pritiscima i defekti u poluprovodničkim materijalima izazvani jonizujućim zračenjem i električnim poljem


    2002-2005 Proboj u gasovima na niskim pritiscima i neke karakteristike poluprovodničkih materijala


    1996-2000 Fizički procesi u jonizovanim gasovima i kondenzovanom stanju materije


    1995-1997 Poluprovodnički tranzistorski mikrodozimetar gama i X zračenja


    1993-1995 Razvoj senzora zračenja

Poslednji put izmenjeno sreda, 18 novembar 2020 23:40