Naučne publikacije akademskog osoblja

Ukoliko želite, kartone naučnog osoblja ovog fakulteta možete da pogledate i na sajtu Elektronskog fakulteta.

NAPOMENA

Za tačnost unetih podataka o publikacijama, naučnim i umetničkim referencama odgovorni su autori.
Datum kreiranja: 15.01.2014.

Ivica Manić

Dodatne informacije

  • Lični podaci

  • Datum rođenja: 03-10-1960.
  • Mesto rođenja: Bela Palanka
  • Obrazovanje

  • Fakultet: Elektronski fakultet
  • Odsek / Grupa / Smer: Elektronske komponente
  • Godina diplomiranja: 1985.
  • Spisak publikacija

  • Monografije i poglavlja u monografijama:

    Ninoslav Stojadinović, Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Snežana Golubović, Zoran Prijić, Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors, in “Bias Temperature Instability for Devices and Circuits”, edited by Tibor Grasser, Springer, New York, pp. 533-560, 2014, ISBN 978-1-4614-7908-6, ISBN 978-1-4614-7909-3 (e-book) http://link.springer.com/book/10.1007/978-1-4614-7909-3     M13


    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Implications of Negative Bias Temperature Instability in Power MOS Transistors in “Micro Electronic and Mechanical Systems”, edited by Kenichi Takahata, IN-TECH Press, Boca Raton, pp. 19.319-19.342, 2009, ISBN 978-953-307-027-8, http://www.intechopen.com/books/show/title/micro-electronic-and-mechanical-systems      M14


    Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Vojkan Davidović, “Efekti naprezanja oksida gejta VDMOS tranzistora snage“, Edicija: Monografije, Elektronski fakultet Niš, 2006,  ISBN 86-85195-16-0      M42

  • Radovi u časopisima sa IMPACT faktorom:

    Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Srboljub Stanković, Aneta Prijić, Zoran Prijić, Ivica Manić, Danijel Danković, “NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Microelectron. Reliab., Vol. 88-90, 2018, pp. 135-141, ISSN 0026-2714, DOI:10.1016/j.microrel.2018.07.138     M23


    Vojkan Davidović, Danijel Danković, Aleksandar Ilić, Ivica Manić, Snežana Golubović, Snežana Djorić-Veljković, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, "Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors", Jpn. J. Appl. Phys., Vol. 57, 2018, 044101 (10 pp.), ISSN 0021-4922 (Print) ISSN 1347-4065 (Online) DOI:10.7567/JJAP.57.044101  M23


    Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Zoran Prijić, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Ninoslav Stojadinović, "A review of pulsed NBTI in P-channel power VDMOSFETs", Microelectron. Reliab., Vol. 82, 2018, pp. 28-36, ISSN 0026-2714, DOI:10.1016/j.microrel.2018.01.003 M23


    Danijel Danković, Ivica Manić, Vojkan Davidović, Aneta Prijić, Miloš Marjanović, Aleksandar Ilić, Zoran Prijić, Ninoslav Stojadinović, “On the recoverable and permanent components of NBTI in p-channel power VDMOSFETs”, IEEE Trans. Dev. Mater. Reliab., Vol. 16, No. 4, December 2016, pp. 522-531, DOI:10.1109/TDMR.2016.2598557 M22


    Vojkan Davidović, Danijel Danković, Aleksandar Ilić, Ivica Manić, Snežana Golubović, Snežana Djorić-Veljković, Zoran Prijić, Ninoslav Stojadinović, “NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors”, IEEE Trans. Nucl. Sci., Vol.63, No. 2, 2016, pp.1268-1275, ISSN 0018-9499, DOI:10.1109/TNS.2016.2533866       M21


    Danijel Danković, Ninoslav Stojadinović, Zoran Prijić, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, “Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFETs”, Chin. Phys. B, Vol. 24, No. 10, 2015, 106601 (9 pp.), ISSN 1674-1056, DOI:10.1088/1674-1056/24/10/106601 http://iopscience.iop.org/article/10.1088/1674-1056/24/10/106601  M22


    Danijel Danković, Ivica Manić, Aneta Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Ninoslav Stojadinović, Zoran Prijić, Snežana Golubović, “Negative bias temperature instability in p-channel oower VDMOSFETs: recoverable versus permanent degradation”, Semicond. Sci. Technol., Vol. 30, 2015, 105009 (9 pp.), ISSN 0268-1242 (Print), ISSN 1361-6641 (Online), DOI:10.1088/0268-1242/30/10/105009 http://iopscience.iop.org/0268-1242/30/10/105009/   M21


    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors”, Jpn. J. Appl. Phys., Vol. 54, 2015, 064101 (7 pp.), ISSN 0021-4922 (Print) ISSN 1347-4065 (Online) DOI:10.7567/JJAP.54.064101, http://iopscience.iop.org/article/10.7567/JJAP.54.064101/   M23


    Ivica Manić, Danijel Danković, Aneta Prijić, Zoran Prijić, Ninoslav Stojadinović, “Measurement of NBTI degradation in p-channel power VDMOSFETs”, Informacije MIDEM J. Microelectronics, Electronic Components and Materials, Vol. 44, 2014, pp. 280-287, pp. 58-66, ISSN 0352-9045 (Print), ISSN 2232-6979 (Online), http://www.midem-drustvo.si/Journal%20papers/MIDEM_44(2014)4p280.pdf      M23


    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power VDMOSFET”, Nuclear Technology & Radiation Protection, Vol. 28, No. 4, 2013, pp. 406-414, ISSN 1451-3994, DOI: 10.2298/NTRP1304406D http://ntrp.vinca.rs/2013_4/DjoricVeljkovic2013_4.htm M22


    Elena Atanassova, Ninoslav Stojadinović, Dencho Spassov, Ivica Manić, Albena Paskaleva, “Time-Dependent Dielectric Breakdown in Pure and Al-Lightly Doped Ta2O5 Stacks”, Semicond. Sci. Technol., Vol. 28, 2013, 055006 (9 pp.), ISSN 0268-1242 (Print), ISSN 1361-6641 (Online), DOI: 10.1088/0268-1242/28/5/055006 http://iopscience.iop.org/0268-1242/28/5/055006/  M21


    Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs”, Informacije MIDEM J. Microelectronics, Electronic Components and Materials, Vol. 43, 2013, pp. 58-66, ISSN 0352-9045 (Print), ISSN 2232-6979 (Online), http://www.midem-drustvo.si/Journal%20papers/MIDEM_43(2013)1p58.pdf  M23


    Aneta Prijić, Danijel Danković, Ljubomir Vračar, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “A method for negative bias instability (NBTI) measurements on power VDMOS transistors”, Meas. Sci. Techn., Vol. 23, 2012, 085003 (8 pp.), ISSN 0957-0233 (Print), ISSN 1361-6501 (Online), DOI: 10.1088/0957-0233/23/8/085003, http://iopscience.iop.org/0957-0233/23/8/085003/  M21


    Ivica Manić, Danijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions”, Microelectron. Reliab., Vol. 51, 2011, pp. 1540-1543, ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.06.004 http://www.sciencedirect.com/science/article/pii/S0026271411001946  M22


    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Annealing of Radiation-Induced Defects in Burn-in Stressed Power VDMOSFETs”, Nuclear Technology & Radiation Protection, Vol. 26, No. 1, 2011, pp. 18-24, ISSN 1451-3994, DOI: 10.2298/NTRP1101018D, http://ntrp.vinca.rs/2011_1/Djoric-Veljkovic2011_1.html  M22


    Ivica Manić, Elena Atanassova, Ninoslav Stojadinović, Dencho Spassov, Albena Paskaleva, “Hf-doped Ta2O5 stacks under constant voltage stress”, Microelectron. Engineering, Vol. 88, 2011, pp. 305-313, ISSN: 0167-9317, DOI:10.1016/j.mee.2010.11.033, http://linkinghub.elsevier.com/retrieve/pii/S0167931710004545  M21


    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Microelectron. Reliab., Vol. 50, 2010, pp. 1278-1282, ISSN 0026-2714,   DOI:10.1016/j.microrel.2010.07.122, http://linkinghub.elsevier.com/retrieve/pii/S0026271410003951  M22


    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 49, 2009, pp. 1003-1007, ISSN 0026-2714,   DOI:10.1016/j.microrel.2009.07.010, http://linkinghub.elsevier.com/retrieve/pii/S0026271409002418  M22


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 48, 2008, pp. 1313-1317, ISSN 0026-2714,   DOI:10.1016/j.microrel.2008.06.015, http://linkinghub.elsevier.com/retrieve/pii/S0026271408002023  M22


    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković, Sima Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese Journal of Applied Physics, Vol. 47, 2008, pp. 6272-6276, ISSN 1347-4065 (online) 0021-4922 (print)   DOI:10.1143/JJAP.47.6272, http://jjap.jsap.jp/link?JJAP/47/6272/  M22


    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs”, IET Circuits, Devices & Systems, Vol. 2, 2008, pp. 213-221, ISSN 1751-858X,   DOI:10.1049/iet-cds:20070173, http://ieeexplore.ieee.org/Xplore/login.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F4123966%2F4490219%2F04490224.pdf%3Farnumber%3D4490224&authDecision=-203  M23


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 47, 2007, pp. 1400-1405, ISSN 0026-2714,   DOI:10.1016/j.microrel.2007.07.022, http://linkinghub.elsevier.com/retrieve/pii/S0026271407002910  M22


    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 46, 2006, pp. 1828-1833, ISSN 0026-2714,   DOI:10.1016/j.microrel.2006.07.077  M22


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev “Electrical Stressing Effects in Commercial Power VDMOSFETs”, IEE Proc. Circuits, Devices & Systems, Vol. 153, 2006, pp. 281-288, ISSN 1350-2409,   DOI:10.1049/ip-cds:20050050  M23


    Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 45, 2005, pp. 1343-1348, ISSN 0026-2714,   DOI:10.1016/j.microrel.2005.07.018  M22


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Effects of Electrical Stressing in Power VDMOSFETs”, Microelectron. Reliab., Vol. 45, 2005, pp. 115-122, ISSN 0026-2714, DOI:10.1016/j.microrel.2004.09.002  M22


    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Effects of Burn-in Stressing on Post-Irradiation Annealing Response of Power VDMOSFETs”, Microelectron. Reliab., Vol. 43, 2003, pp. 1455-1460, ISSN 0026-2714  M22


    Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Effects of Burn-in Stressing on Radiation Response of Power VDMOSFETs”, Microelectron. J., Vol. 33, 2002, pp. 899-905.  M23


    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, “Mechanisms of Spontaneous Recovery in Positive Gate Bias Stressed Power VDMOSFETs”, Microelectron. Reliab., Vol. 42, 2002, pp. 1465-1468, ISSN 0026-2714  M22


    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Effects of High Electric Field and Elevated-Temperature Bias Stressing on Radiation Response in Power VDMOSFETs”, Microelectron. Reliab., Vol. 42, 2002, pp. 669-677, ISSN 0026-2714          M22


    Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Radiation Hardening of Power VDMOSFETs Using Electrical Stress”, Electronics Letters, Vol. 38, 2002, p.431.  M21


    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Mechanisms of Positive Gate Bias Stress Induced Instabilities in Power VDMOSFETs”, Microelectron. Reliab., Vol. 41, 2001, pp. 1373-1378, ISSN 0026-2714  M22


    Ivica Manić, Zoran Pavlović, Zoran Prijić, Vojkan Davidović, Ninoslav Stojadinović, “Analytical Modelling of Electrical Characteristics in g-Irradiated Power VDMOS Transistors”, Microelectron. J., Vol. 32, 2001, pp.485-490.  M22


    Zoran Pavlović, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “Temperature Distribution in the Cells of Low-Voltage Power VDMOS Transistor”, Microelectron. J., Vol. 30, 1999, pp.109-113.  M23


    Ivica Manić, Susumu Horita, Tomonobu Hata, “Preparation of Stoichiometric Bi-Sr-Ca-Cu-O Superconducting Thin Films by RF Diode Sputtering”, Microelectron. J., Vol. 24, 1993, pp.675-687.  M23

  • Radovi u ostalim časopisima:

    Vojkan Davidović, Danijel Danković, Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, Srboljub Stanković, „NBT Stress and Radiation Related Degradation and Underlaying Mechanisms in Power VDMOSFETs“, Facta Universitatis, Series: Electronics and Energetics, University of Niš, Vol. 31, No. 3, pp. 367-388, 2018, ISSN:0353-3670, DOI: 10.2298/FUEE1803367D     М24


    Ivica Manić, Danijel Danković, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “Effects of pulsed negative bias temperature stressing in p-channel power VDMOSFETs”, Facta Universitatis, Series: Electronics and Energetics, Vol. 29, no. 1, 2016, pp. 49-60, ISSN 0353-3670 (Print), ISSN 2217-5997 (Online), DOI:10.2298/FUEE1601049M, http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/1288/782


    Danijel Danković, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “Lifetime estimation in NBT-stressed p-channel power VDMOSFETs”, Facta Universitatis, Series: Automatic Control and Robotics, Vol. 11, no. 1, 2012, pp. 15-23, ISSN 1820-6417 (Print), ISSN 1820-6425 (Online), http://facta.junis.ni.ac.rs/acar/acar201201/acar20120102.pdf


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Effects of Gate Bias Stressing in Power VDMOSFETs”, Serbian Journal of Electrical Engineering, Vol. 1, 2003, pp. 89-101, YU ISSN 1451-4869.


    Zoran Pavlović, Ivica Manić, Snežana Golubović, “Effects of g-Irradiation on Electrical Characteristics of Power VDMOS Transistors”, Facta Universitatis, Series: Physics, Chemistry and Technology, Vol. 2, No. 4, 2002, pp. 223-233.

  • Radovi na naučnim skupovima međunarodnog značaja:

    Sandra Veljković, Nikola Mitrović, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, Albena Paskaleva, Dencho Spassov, Zoran Prijić, Aneta Prijić, Srboljub Stanković, Danijel danković, "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors", Proc. 32nd Int. Conference on Microelectronics (MIEL 2021), Niš (Serbia), September 2021, pp. 345-350, ISBN 978-1-6654-4528-3


    Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Srboljub Stanković, Aneta Prijić, Zoran Prijić, Ivica Manić, Danijel Danković, “NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Proc. 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Aalborg (Denmark), October 2018, pp. 135-141


    Danijel Danković, Ivica Manić, Ninoslav Stojadinović, Zoran Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Albena Paskaleva, Dencho Spassov, Snežana Golubović, "Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs", Proc. 30th Int. Conference on Microelectronics (MIEL 2017), Niš (Serbia), October 2017, pp. 147-151, ISBN 978-1-5386-2563-7


    Danijel Danković, Ivica Manić, Ninoslav Stojadinović, Zoran Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Albena Paskaleva, Dencho Spassov, Snežana Golubović, "Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs", Proc. 30th Int. Conference on Microelectronics (MIEL 2017), Niš (Serbia), October 2017, pp. 147-151, ISBN 978-1-5386-2563-7


    Zoran Prijić, Danijel Danković, Aneta Prijić, Ivica Manić, Ninoslav Stojadinović, “A Method for Measuring NBTI Degradation in p-channel Power VDMOSFETs”, Proc. 50th International Conference on Microelectronics, Devices and Materials (MIDEM 2014), Ljubljana (Slovenia), October 2014, pp. 9-16, ISBN 978-961-92933-4-8


    Danijel Danković, Ninoslav Stojadinović, Zoran Prijić Ivica Manić, Aneta Prijić, “Recoverable and Permanent Components of VT Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs”, Proc. 29th Int. Conference on Microelectronics (MIEL 2014), Belgrade (Serbia), May 2014, pp. 297-300, ISBN 978-1-4799-5295-3


    Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Ivica Manić, Snežana Golubović, Ninoslav Stojadinović, “Recovery Treatment Effects on Gamma Radiation Response in Electrically Stressed Power VDMOS Transistors”, Proc. 29th Int. Conference on Microelectronics (MIEL 2014), Belgrade (Serbia), May 2014, pp. 293-296, ISBN 978-1-4799-5295-3


    Danijel Danković, Aneta Prijić, Ivica Manić, Zoran Prijić and Ninoslav Stojadinović “Measurements of Negative Bias Temperature Instability (NBTI) in p-channel Power VDMOSFETs”, Proc. 11th International Seminar on Power Semiconductors (ISPS 2012), Prague (Czech Republic), August 2012, pp. 240-245


    Ivica Manić, Danijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “ NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static under the static and pulsed NBT stress conditions ”, Proc. 22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011), Bordeaux (France), October 2011, pp. 1540-1543; ; takođe Microelectron. Reliab., Vol. 51, 2011


    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Proc. 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), Montecassino and Gaeta (Italy), October 2010, pp. 1278-1282; takođe Microelectron. Reliab., Vol. 50, 2010


    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Aneta Prijić, Vojkan Davidović, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović “Negative Bias Temperature Instability in p-Channel Power VDMOSFETs Under Pulsed Bias Stress”, Proc. 10th International Seminar on Power Semiconductors (ISPS 2010), Prague (Czech Republic), September 2010, pp. 173-178, ISBN 978-80-01-04602-9


    Ivica Manić, Elena Atanassova, Ninoslav Stojadinović, Dencho Spassov, “Effects of Constant Voltage Stress in Hf-doped Ta2O5 stacks”, Proc. 27th Int. Conference on Microelectronics (MIEL 2010), Niš (Serbia), May 2010, pp. 483-486, ISBN 978-1-4244-7198-0


    Snežana Djorić-Veljković, Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “Degradation of p-channel Power VDMOSFETs under Pulsed NBT Stress”, Proc. 27th Int. Conference on Microelectronics (MIEL 2010), Niš (Serbia), May 2010, pp. 443-446, ISBN 978-1-4244-7198-0


    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs”, Proc. 20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2009), Bordeaux (France), October 2009, pp. 1003-1009; takođe Microelectron. Reliab., Vol. 49, 2009


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, Proc. 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2008), Maastricht (The Netherlands), October 2008, pp. 1313-1317; takođe Microelectron. Reliab., Vol. 48, 2008


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative Bias Temperature Stress and Annealing Effects in p-Channel Power VDMOSFETs“, Proc. 9th Int. Seminar on Power Semiconductors (ISPS 2008), Prague (Czech Republic), August 2008, pp 127-132, ISBN 978-80-01-04139-0


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “New Approach in Estimating the Lifetime in NBT Stressed P-Channel Power VDMOSFETs”, Proc. 26th Int. Conference on Microelectronics (MIEL 2008), Niš (Serbia), 11-14 May 2008, pp. 599-602, ISBN 978-1-4244-1881-7


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Proc. 18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2007), Bordeaux (France), October 2007, pp. 1400-1405; takođe Microelectron. Reliab.,Vol.47, 2007


    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, “Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs”, Proc 8th Int. Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS 2007), Niš (Serbia), 26-28 September 2007, pp. 275-282, ISBN 1-4244-1467-9 (IEEE), 978-86-85195-54-9 (FEE)


    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Proc. 17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal (Germany), October 2006, pp. 1828-1833; takođe Microelectron. Reliab., Vol. 46, 2006


    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković,  Sima Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed P-Channel Power VDMOS Transistors”, Proc. 8th Int. Seminar on Power Semiconductors (ISPS 2006), Prague (Czech Republic), August 2006, pp 85-89.


    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Lifetime Estimation in NBT Stressed P-Channel Power VDMOSFETs”, Proc. 25th Int. Conference on Microelectronics (MIEL 2006), Belgrade (Serbia and Montenegro), 14-17 May 2006, pp. 645-648.


    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović “Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs”, Proc. 25th Int. Conference on Microelectronics (MIEL 2006), Belgrade (Serbia and Montenegro), 14-17 May 2006, pp. 639-644.


    Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić,  Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Proc. 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2005), Bordeaux (France), October 2005, pp. 1343-1348; takođe Microelectron. Reliab., Vol. 45, 2005


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Electrical Stressing Effects in Power VDMOSFETs”, Proc. 7th Int. Seminar on Power Semiconductors (ISPS 2004), Prague (Czech Republic), September 2004, pp. 109-114.


    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Burn-in Stressing Effects on Post-Irradiation Annealing Response of Power VDMOSFETs”, Proc. 24th Int. Conference on Microelectronics (MIEL 2004), Niš (Serbia and Montenegro), 16-19 May 2004, pp. 701-704.


    Zoran Pavlović, Ivica Manić, Ninoslav Stojadinović, “An Improved Analytical Model of IGBT in Forward Conduction Mode”, Proc. 24th Int. Conference on Microelectronics (MIEL 2004), Niš (Serbia and Montenegro), 16-19 May 2004, pp. 163-166.


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Effects of Electrical Stressing in Power VDMOSFETs”, Proc. 2003 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2003), Hong Kong (China), December 2003, pp. 291-296 – invited paper


    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Effects of Burn-in Stressing on Post-Irradiation Annealing Response of Power VDMOSFETs”, Proc. 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2003), Bordeaux (France), October 2003, pp. 1455-1460; takođe Microelectron. Reliab., Vol. 43, 2003


    Vojkan Davidović, Ivica Manić, Snežana Djorić-Veljković, Danijel Danković, Snežana Golubović, Sima Dimitrijev, Ninoslav Stojadinovic, “Effects of Negative Gate Bias Stressing in Power VDMOSFETs”, Proc. 7th International Symposium on Microelectronics Technologies and Microsystems (MTM 2003), Sozopol (Bulgaria), September 2003, pp. 150-155.


    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, Ninoslav Stojadinović, “Effects of Negative Gate Bias Stressing in Thick Gate Oxides for Power VDMOSFETs”, Proc. 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002), Grenoble (France), November 2002, pp. 41-44.


    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, “Mechanisms of Spontaneous Recovery in Positive Gate Bias Stressed Power VDMOSFETs”, Proc. 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2002), Rimini (Italy), October 2002, pp. 1465-1468; takođe Microelectron. Reliab., Vol. 42, 2002


    Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Radiation Response of Elevated-Temperature Bias Stressed Power VDMOSFETs”, Proc. 6th Int. Seminar on Power Semiconductors (ISPS 2002), Prague (Czech Republic), September 2002, pp. 69-74.


    Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Effects of Positive Gate Bias Stress on Radiation Response in Power VDMOSFETs”, Proc. 23rd Int. Conference on Microelectronics (MIEL 2002), Niš (Yugoslavia), 12-15 May 2002, pp.723-726.


    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, “Spontaneous Recovery of Positive Gate Bias Stressed Power VDMOSFETs, Proc. 23rd Int. Conference on Microelectronics (MIEL 2002), Niš (Yugoslavia), 12-15 May 2002, pp.717-722.


    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Effects of Positive Gate Bias Stressing and Subsequent Recovery Treatment in Power VDMOSFETs”, Proc. 4th IEEE Int. Caracas Conference on Devices, Circuits, and Systems (ICCDCS 2002), Aruba (Dutch Caribbean), 15-17 April 2002, pp. DO50-1 ‑ DO50-8 - invited paper.


    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Mechanisms of Positive Gate Bias Stress Induced Instabilities in Power VDMOSFETs”, Proc. 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2001), Bordeaux (France), October 2001, pp.1373-1378; takođe Microelectron. Reliab., Vol. 41, 2001


    Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, “Gamma-Irradiation Effects in Power MOSFETs for Applications in Communications Satellites”, Proc. 5th Int. Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS 2001), Niš (Yugoslavia), September 2001, pp.395-400.


     Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Effects of Elevated-Temperature Bias Stressing on Radiation Response in Power VDMOSFETs”, Proc. 8th Int. Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001), Singapore, 9 – 13 July 2001, pp. 243-248.


    Ivica Manić, Zoran Pavlović, Snežana Golubović, Snežana Djorić-Veljković, Vojkan Davidović, Ninoslav Stojadinović, “Effects of g-Irradiation on Drain Current and Transconductance in Power VDMOS Transistors”, Proc. 8th Int. Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2001), Zakopane (Poland), 21 – 23 June 2001, pp. 333-338.


    Ivica Manić, Zoran Pavlović, Zoran Prijić, Vojkan Davidović, Ninoslav Stojadinović, “Influence of g-Irradiation on Electrical Characteristics of Power VDMOS Transistors”, Proc. 5th Int. Seminar on Power Semiconductors (ISPS 2000), Prague (Czech Republic), 30 Aug.-1 Sept. 2000, pp. 203-208.


    Zoran Pavlović, Ivica Manić, Zoran Prijić, Vojkan Davidović, Ninoslav Stojadinović, “Influence of Gate Oxide Charge Density on VDMOS Transistor ON-Resistance”, Proc. 22nd Int. Conference on Microelectronics (MIEL 2000), Niš (Yugoslavia), 14-17 May 2000, pp. 663-666.


    Stojan Ristić, Ivica Manić, Zoran Prijić, Aneta Prijić, “General Analytical Solution to the Minority Carrier Density in Low-High Junctions”, Proc. 22nd Int. Conference on Microelectronics (MIEL 2000), Niš (Yugoslavia), 14-17 May 2000, pp. 169-172.


    Zoran Pavlović, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “Influence of Channel Dopant Concentration and Temperature on Low-Voltage VDMOS Transistor ON-Resistance”, Proc. 21st Int. Semiconductor Conference (CAS’98), Sinaia (Romania), 6-10 October 1998, Vol. 1, pp. 153-156.


    Zoran Pavlović, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “Temperature Dependence of ON-Resistance in High-Voltage Power VDMOS Transistors”, Proc. 4th Int. Seminar on Power Semiconductors (ISPS’98), Prague (Czech Republic), 2-4 September 1998, pp. 227-232.


    Mihajlo Odalović, Zoran Pavlović, Biljana Vučković, Ivica Manić, ”Investigation of Radiation Sensitivity and Postirradiation Thermal Sensitivity of MOS Transistor”, Proc. 21st International Conference on Microelectronics (MIEL’97), Niš (Yugoslavia), 14‑17 September 1997, Vol. 1, pp. 357-360.


    Zoran Pavlović, Ivica Manić, Zoran Prijić, ”Temperature Distribution in VDMOS Power Transistor Cells”, Proc. 21st International Conference on Microelectronics (MIEL’97), Niš (Yugoslavia), 14-17 September 1997, Vol. 1, pp. 403-406.


    Zoran Pavlović, Ivica Manić, T. Jovanović, Zoran Prijić, “Temperature Dependence of High-Voltage VDMOS Power Transistor Transconductance”, Proc. of ELECTRONICA ‘96, Botevgrad (Bulgaria), 10-11 October 1996, pp. 267-272.


    Ivica Manić, Toru Tajima, Susumu Horita, Tomonobu Hata, “Preparation of Bi-Sr-Ca-Cu-O Films on a Buffered Silicon Substrate”, Proc. 51st Annual Conference of the Society of Applied Physics of Japan, Morioka, 1990, Vol. 1, p. 150. 

  • Radovi na domaćim naučnim skupovima:

    Vojkan Davidović, Danijel Danković, Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, “Elektrohemijski procesi kod p-kanalnih VDMOS tranzistora snage pri sukcesivnom NBT naprezanju i ozračivanju”, Zbornik radova 62. konferencije za ETRAN, Palić, 11-14 jun 2018, str. 299-303


    Vojkan Davidović, Albena Paskaleva, Dencho Spassov, Ezbieta Guziewicz, Tomasz Krajewski, Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Danijel Danković, Ninoslav Stojadinović, "Ispitivanje višeslojnih HfO2/Al2O3 struktura za memorijske komponente", Zbornik radova 61. konferencije za ETRAN, Kladovo, 05-08. jun 2017, str. MO1.1.1-MO1.1.4, ISBN 978-86-7466-692-0


    Danijel Danković, Aneta Prijić, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “Naponsko temperaturna naprezanja p-kanalnih VDMOS tranzistora snage”, Zbornik radova 57. konferencije za ETRAN, Zlatibor, 3-6 Jun 2013, str. MO1.1-1-4


    Snežana Đorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Uticaj odžarivanja na oporavak električno naprezanih p-kanalnih VDMOS tranzistora snage”, Zbornik radova 57. konferencije za ETRAN, Zlatibor, 3-6 Jun 2013, str. MO1.2-1-6


    Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “Modelovanje napona praga p-kanalnih VDMOS tranzistora snage tokom naponsko temperaturnih naprezanja i odžarivanja”, Zbornik radova 56. konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.2-1-4


    Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, Snežana Djorić-Veljković “Određivanje perioda pouzdanog rada p-kanalnih VDMOS tranzistora snage podvrgnutih kontinualnim i impulsnim NBT naprezanjima”, Zbornik radova 56. konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.1-1-4,


    Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, “Instabilities in p-channel power VDMOSFETs subjected to pulsed negative bias temperature stressing”, Zbornik radova 54. konferencije za ETRAN, Donji Milanovac, 7-10 Jun 2010, str. MO1.1-1-4, ISBN 978-86-80509-65-5


    Ivica Manić, Ninoslav Stojadinović, Elena Atanassova, Dencho Spassov, “Constant voltage stressing of Hf-doped Ta2O5 stacks”, Zbornik radova 54. konferencije za ETRAN, Donji Milanovac, 7-10 Jun 2010, str. MO1.2-1-4, ISBN 978-86-80509-65-5


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, “Instabilities in p-channel power VDMOSFETs subjected to multiple negative bias temperature stressing and annealing”, Zbornik radova 53. konferencije za ETRAN, Vrnjačka banja, 15-19 Jun 2009, str. MO1.1-1-4, ISBN 978-86-80509-64-8


    Đorđe Kostadinović, Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubo-vić, Ninoslav Stojadinović, Snežana Đorić-Veljković “Efekti spontanog oporavka kod p-kanalnih VDMOS tranzistora snage naprezanih jakim električnim poljem u oksidu gejta”, Zbornik radova 53. konferencije za ETRAN, Vrnjačka banja, 15-19 Jun 2009, str. MO1.2-1-4, ISBN 978-86-80509-64-8


    Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “NBTI in p- and n-channel power VDMOSFETs”, Zbornik radova 52. konferencije za ETRAN, Palić, 08-12. jun 2008, str. MO1.1-1-4, ISBN 978-86-80509-63-1


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, “Lifetime evaluation in p-channel power VDMOSFETs under NBT stress”, Zbornik radova 52. konferencije za ETRAN, Palić, 08-12 Jun 2008, str. MO1.2-1-4, ISBN 978-86-80509-63-1


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Đorić-Veljković, “Nestabilnosti p-kanalnog VDMOS tranzistora snage usled naponsko-temperaturnih naprezanja sa negativnom polarizacijom gejta”, Zbornik radova XLIX konferencije za ETRAN, Budva, 5-10. jun 2005, sveska IV, str. 129-132.


    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Đorić-Veljković, Sima Dimitrijev, “Turn-around efekat napona praga kod PMOS tranzistora naprezanih pozitivnim naponima na gejtu”, Zbornik radova XLIX konferencije za ETRAN, Budva, 5-10. jun 2005, sveska IV, str. 125-128.


    Snežana Đorić-Veljković, Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Uticaj temperaturno-naponskih testova pouzdanosti na efekte odžarivanja kod ozračenih VDMOS tranzistora snage”, Zbornik radova XLVII konferencije za ETRAN, Herceg Novi, 8-13. jun 2003, sveska IV, str. 187-190.


    Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, Snežana Đorić-Veljković, Sima Dimitrijev, “Efekti naprezanja negativnom polarizacijom na gejtu kod VDMOS tranzistora snage”, Zbornik radova XLVII konferencije za ETRAN, Herceg Novi, 8-13. jun 2003, sveska IV, str. 183-186.


    Vojkan Davidović, Snežana Golubović, Ivica Manić, Danijel Danković, Ninoslav Stojadinović, Snežana Đorić-Veljković, Sima Dimitrijev, “Primena tehnika za razdvajanje efekata naelektrisanja u oksidu i površinskih stanja kod VDMOS tranzistora snage”, Zbornik radova XLVI konferencije za ETRAN, Banja Vrućica, 3-6. jun 2002, sveska IV, str. 145-148.


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Snežana Golubović, Snežana Đorić-Veljković, “Uticaj električnog naprezanja na otpornost VDMOS tranzistora snage na zračenje”, Zbornik radova XLVI konferencije za ETRAN, Banja Vrućica, 3-6. jun 2002, sveska IV, str. 142-144.


    Ninoslav Stojadinović, Ivica Manić, Snežana Golubović, Vojkan Davidović, Snežana Đorić-Veljković, Sima Dimitrijev, “Efekti naprezanja pozitivnom polarizacijom na gejtu kod VDMOS tranzistora snage”, Zbornik radova XLV jugoslovenske konferencije za ETRAN, Bukovička Banja, 4-7. jun 2001, sveska IV, str. 204-207.


    Snežana Đorić-Veljković, Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Uticaj temperaturno-naponskih testova pouzdanosti na efekte zračenja kod VDMOS tranzistora snage”, Zbornik radova XLV jugoslovenske konferencije za ETRAN, Bukovička Banja, 4-7. jun 2001, sveska IV, str. 200-203.


    Ivica Manić, Vojkan Davidović, Zoran Prijić, Ninoslav Stojadinović, Zoran Pavlović, “Uticaj g-zračenja na električne karakteristike VDMOS tranzistora”, Zbornik radova XLIV jugoslovenske konferencije za ETRAN, Sokobanja, 26-29. jun 2000, sveska IV, str. 201-204.


    Zoran Pavlović, Mihajlo Odalović, Tijana Premović, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “Uticaj gustine naelektrisanja u oksidu kanala na transkonduktansu VDMOS tranzistora snage”, Zbornik referata XLIII jugoslovenske konferencije za ETRAN, Zlatibor, 20-22. septembar 1999, sveska IV, str. 142-145.


    Zoran Pavlović, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “Zavisnost otpornosti uključenja niskonaponskih VDMOS tranzistora snage od koncentracije primesa u kanalu i temperature”, Zbornik referata XLII jugoslovenske konferencije za ETRAN, Vrnjačka Banja, 2-5. jun 1998, sveska IV, str. 60-63.


    Zoran Pavlović, Ivica Manić, Tihomir Jovanović, “Temperaturna zavisnost komponenata otpornosti uključenja visokonaponskih VDMOS tranzistora”, Zbornik referata XL jugoslovenske konferencije za ETRAN, Budva, jun 1996, sveska IV, str. 94-97.


    Emil Jelenković, Ivica Manić, Ljiljana Pavlović, Mirjana Puletić, Vukašin Simonović, Vinko Zdravković, Svetislav Pantić, “NMOS i PMOS električno programirljivi tranzistori sa silicijumnitridom”, Zbornik radova XXXIII jugoslovenske konferencije za elektroniku, telekomunikacije, automatsko upravljanje i nuklearnu tehniku (ETAN’89), Novi Sad, 1989, sveska 10, str. 67-74.


    Ivica Manić, Lj. Pavlović, M. Puletić, Lj. Mladenović, S. Pantić, Vojkan Simonović, Vojkan Zdravković, E. Jelenković, “Stabilnost tankih filmova Si3N4 na N+ podlozi u uslovima jakih električnih polja”, Zbornik referata XVI jugoslovenskog savetovanja o mikroelektronici (MIEL’88), Zagreb, 1988, sveska 1, str. 97-104.

  • Tehnička rešenja:

    Danijel Danković, Aneta Prijić, Ivica Manić, Ljubomir Vračar, Zoran Prijić, Ninoslav Stojadinović, “Nova metoda za ispitivanje nestabilnosti usled naponsko temperaturnih naprezanja VDMOS tranzistora snage”, Признато техничко решење, спада у категорију: нова метода, софтвер (2012.), Наставно-научно веће Електронског факултета у Нишу, Број 17/10-010/13-001 od 17. 01. 2013. године

Poslednji put izmenjeno ponedeljak, 20 decembar 2021 18:06