Naučne publikacije akademskog osoblja

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Datum kreiranja: 20.01.2014.

Danijel M. Danković

Dodatne informacije

  • Lični podaci

  • Datum rođenja: 28.06.1976
  • Mesto rođenja: Leskovac
  • Obrazovanje

  • Fakultet: Elektronski fakultet u Nišu
  • Odsek / Grupa / Smer: Mikroelektronika
  • Godina diplomiranja: 2001.
  • Spisak publikacija

  • Monografije i poglavlja u monografijama:

    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, and Ninoslav Stojadinović “Implications of Negative Bias Temperature Instability in Power MOS Transistors” in “Micro Electronic and Mechanical Systems”, edited by Kenichi Takahata, IN-TECH Press, Boca Raton, pp. 19.319-19.342 (2009), ISBN 978-953-307-027-8, http://www.intechopen.com/books/show/title/micro-electronic-and-mechanical-systems 


    Ninoslav Stojadinović, Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Snežana Golubović, Zoran Prijić, “Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors” in “Bias Temperature Instability for Devices and Circuits”, Editors: Tibor Grasser, Springer New York, pp. 533-559 (2014), ISBN: 978-1-4614-7908-6 (Print) 978-1-4614-7909-3 (Online), DOI: 10.1007/978-1-4614-7909-3_20, p://link.springer.com/chapter/10.1007/978-1-4614-7909-3_20


    Miloš Marjanović, Vesna Paunović, Danijel Danković, Aneta Prijić, Zoran Prijić, “Characterization and SPICE Modeling of Passive Electronic Devices at High Frequencies” in “Proceedings of the IV Advanced Ceramics and Application Conference”, Editors: Bill Lee, Rainer Gadow, Vojislav Mitic, Atlantis Press, pp. 435-446, ISBN: 978-94-6239-212-0, 978-94-6239-213-7 (eBook), https://www.springerprofessional.de/en/characterization-and-spice-modeling-of-passive-electronic-device/12002150 

  • Knjige i udžbenici:

    Danijel Danković, “Laboratorijski praktikum sa zadacima za samostalan rad iz predmeta komponente za telekomunikacije”, Univerzitet u Nišu, Elektronski fakultet u Nišu, Edicija: Pomoćni udžbenici, 2018.  ISBN: 978-86-6125-202-0.

  • Radovi u časopisima sa IMPACT faktorom:

    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović and Sima Dimitrijev, “Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Microelectronics Reliability, vol. 42, pp. 1465-1468 (2002), ISSN 0026-2714, DOI: 10.1016/S0026-2714(02)00171-3, http://www.sciencedirect.com/science/article/pii/S0026271402001713


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović and S. Dimitrijev, “Effects of electrical stressing in power VDMOSFETs”, Microelectronics Reliability, vol. 45, pp. 115-122 (2005), ISSN 0026-2714, DOI:10.1016/j.microrel.2004.09.002            , http://www.sciencedirect.com/science/article/pii/S0026271404003786


    Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, and Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Microelectronics Reliability, vol. 45, pp. 1343-1348 (2005), ISSN 0026-2714,   DOI: 10.1016/j.microrel.2005.07.018, http://www.sciencedirect.com/science/article/pii/S002627140500168X


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Đorić-Veljković, Snežana Golubović, S. Dimitrijev, “Electrical Stressing Effects in Commercial Power VDMOSFETs”, IEE Proc. Circuits, Devices & Systems, vol. 153, no. 3, pp. 281-288 (2006), ISSN 1350-2409,   DOI:10.1049/ip-cds:20050050


    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Microelectronics Reliability, vol. 46, pp. 1828-1833 (2006), ISSN 0026-2714,   DOI:10.1016/j.microrel.2006.07.077, http://www.sciencedirect.com/science/article/pii/S0026271406002447


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Microelectronics Reliability, vol. 47, pp. 1400-1405 (2007), DOI:10.1016/j.microrel.2007.07.022,  http://linkinghub.elsevier.com/retrieve/pii/S0026271407002910


    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs”, IET Circuits, Devices & Systems, vol. 2, no. 2, pp. 213-221 (2008), ISSN 1751-858X,   DOI:10.1049/iet-cds:20070173, http://ieeexplore.ieee.org/Xplore/login.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F4123966%2F4490219%2F04490224.pdf%3Farnumber%3D4490224&authDecision=-203


    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković and S. Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese Journal of Applied Physics, vol. 47, pp. 6272-6276 (2008), ISSN 1347-4065 (online) 0021-4922 (print)   DOI:10.1143/JJAP.47.6272, http://jjap.jsap.jp/link?JJAP/47/6272/


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Ninoslav Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, Microelectronics Reliability, vol. 48, pp. 1313-1317 (2008), ISSN 0026-2714,   DOI:10.1016/j.microrel.2008.06.015, http://linkinghub.elsevier.com/retrieve/pii/S0026271408002023


    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “Effects of low gate bias annealinig in NBT stressed n-channel power VDMOSFETs”, Microelectronics Reliability, vol. 49, pp. 1003-1007 (2009), ISSN 0026-2714,   DOI:10.1016/j.microrel.2009.07.010, http://linkinghub.elsevier.com/retrieve/pii/S0026271409002418


    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, A. Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Z. Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Microelectronics Reliability, vol. 50, pp. 1278-1282 (2010), ISSN 0026-2714, DOI:10.1016/j.microrel.2010.07.122, http://linkinghub.elsevier.com/retrieve/pii/S0026271410003951


    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, and Ninoslav Stojadinović, “Annealing of Radiation-Induced Defects in Burn-in Stressed Power VDMOSFETs”, Nuclear Technology & Radiation Protection, vol. 26, No. 1, pp. 18-24 (2011), ISSN 1451-3994, DOI: 10.2298/NTRP1101018D, http://ntrp.vinca.rs/2011_1/Djoric-Veljkovic2011_1.html


    Ivica Manić, Danijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static under the static and pulsed NBT stress conditions”, Microelectronics Reliability, vol. 51, pp. 1540-1543 (2011), ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.06.004 http://www.sciencedirect.com/science/article/pii/S0026271411001946


    Aneta Prijić, Danijel Danković, Ljubomir Vračar, Ivica Manić, Zoran Prijić and Ninoslav Stojadinović, “A method for negative bias instability (NBTI) measurements on power VDMOS transistors”, Measurement Science and Technology, vol.23, p. 8 (2012), ISSN 0957-0233 (Print), 1361-6501 (Online), DOI: 10.1088/0957-0233/23/8/085003, http://iopscience.iop.org/0957-0233/23/8/085003/


    Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs”, Informacije MIDEM, Journal of Microlectronics, Electronic Components and Materials, vol. 43, no. 1, pp. 58-66 (2013), ISSN 0352-9045, UDK: 621.3:(53+54+621+66)(05)(497.1)=00, http://www.midem-drustvo.si/Journal%20papers/MIDEM_43%282013%291p58.pdf


    Danijel Danković, Ljubomir Vračar, Aneta Prijić, and Zoran Prijić, “An Electromechanical Approach to a Printed Circuit Board Design Course”, IEEE Transaction on Education, vol. 56, no. 4, pp. 470-477 (2013), ISSN: 0018-9359, DOI: 10.1109/TE.2013.2257784, http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6507652


    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, and Ninoslav Stojadinović, “The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power VDMOSFET”, Nuclear Technology & Radiation Protection, vol. 28, No. 4, pp. 406-414 (2013), ISSN 1451-3994, UDC 621.039+614.876:504.06, DOI: 10.2298/NTRP1304406D, http://ntrp.vin.bg.ac.rs/2013_4/DjoricVeljkovic2013_4.htm                              


    Ivica Manić, Danijel Danković, Aneta Prijić, Zoran Prijić, Ninoslav Stojadinović, “Measurement of NBTI Degradation in p-channel Power VDMOSFETs”, Informacije MIDEM, Journal of Microlectronics, Electronic Components and Materials, vol. 44, no. 4, pp. 280-287 (2014), ISSN 0352-9045, UDK: 621.3:(53+54+621+66), http://www.midem-drustvo.si/Journal%20papers/MIDEM_44%282014%294p280.pdf                                  


    Danijel Danković, Ivica Manić, Aneta Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Ninoslav Stojadinović, Zoran Prijić and Snežana Golubović, “Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation”, Semiconductor Science and Technology, vol. 30, No. 10, p. 105009 (9pp) (2015), ISSN 1361-6641, DOI: 10.1088/0268-1242/30/10/105009, http://iopscience.iop.org/article/10.1088/0268-1242/30/10/105009                               


    Danijel Danković, Ninoslav Stojadinović, Zoran Prijić, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković and Snežana Golubović,“ Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET”, Chinese Physics B, vol. 24, no. 10, pp. 106601-1-106601-9 (2015), ISSN 1674-1056, DOI: 10.1088/1674-1056/24/10/106601, http://iopscience.iop.org/article/10.1088/1674-1056/24/10/106601


    Vojkan Davidović, Danijel Danković, Aleksandar Ilić, Ivica Manić, Snežana Golubović, Snežana Djorić-Veljković, Zoran Prijić, Ninoslav Stojadinović, “NBT and irradiation effects in Negative bias temperature instability in p-channel power VDMOSFET ”, IEEE Transaction on Nuclear Science, vol. 63, no. 2, pp. 1268-1275 (2016), ISSN 0018-9499, DOI: 10.1109/TNS.2016.2533866, http://ieeexplore.ieee.org/document/7454831/


    Danijel Danković, Ivica Manić, Vojkan Davidović, Aneta Prijić, Miloš Marjanović, Aleksandar Ilić, Zoran Prijić, Ninoslav Stojadinović, “ On the recoverable and permanent components of NBTI in p-channel power VDMOSFETs”, IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 522-531 (2016), ISSN 1530-4388, DOI: 10.1109/TDMR.2016.2598557, http://ieeexplore.ieee.org/document/7536114/


    Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Zoran Prijić, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Ninoslav Stojadinović, “A review of pulsed NBTI in P-channel power VDMOSFETs”, Microelectronics Realibaility, vol. 82, pp. 28-36 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.01.003, https://www.sciencedirect.com/science/article/pii/S0026271418300039


    Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Srboljub Stanković, Aneta Prijić, Zoran Prijić, Ivica Manić, Danijel Danković, “ NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Microelectronics Realibaility, vol. 88-90, pp. 135-141 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.07.138, https://www.sciencedirect.com/science/article/pii/S0026271418307224



                                          


     

  • Radovi u ostalim časopisima:

    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Effects of Gate Bias Stressing in Power VDMOSFETs”, Serbian Journal of Electrical Engineering, vol. 1, pp. 89-101 (2003), ISSN 1451-4869 (Print), 2217-7183 (Online), DOI: 10.2298/SJEE0301089S, http://www.journal.ftn.kg.ac.rs/Vol_1-1/Vol_1-1.htm.


    Danijel Danković, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “Lifetime estimation in NBT-stressed p-channel power VDMOSFETs”, Facta Universitatis, Series: Automatic control and Robotics, vol. 11, no. 1 pp. 15-23 (2012), ISSN 1820-6417 (Print), 1820-6425 (Online), UDK: 621.3.049.77   621.3.019.3   621.382.323, http://facta.junis.ni.ac.rs/acar/acar201201/acar20120102.pdf


    Miloš Marjanović, Danijel Danković, Aneta Prijić, Zoran Prijić, Nebojša Janković, Vojkan Davidović “Modeling and PSPICE Simulation of NBTI Effects in VDMOS Transistors”, Serbian Journal of Electrical Engineering, vol. 12, no. 1, pp. 69-79 (2015), ISSN 1451-4869 (Print), 2217-7183 (Online), DOI: 10.2298/SJEE1501069M http://www.journal.ftn.kg.ac.rs/Vol_12-1/           


    Aneta Prijić, Ljubomir Vračar, Dušan Vučković, Danijel Danković and Zoran Prijić, “Practical Aspects of Cellular M2M Systems Design”, Facta Universitatis, Series: Electronics and Energetics, vol. 28, no. 4 pp. 541-556 (2015), ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1504541P http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/986/693


    Miloš Marjanović, Danijel Danković, Vojkan Davidović, Aneta Prijić, Ninoslav Stojadinović, Z. Prijić, N. Janković,“Modeling and PSPICE simulation of radiation stress influence shifts in p-channel power VDMOS transistors”, Radiation & Applications in Physics, Chemistry, Bilogy, Medical Sciences, Engineering and Environmental Sciences, vol. 1, no. 1, pp. 26-30 (2016), ISSN 2466-4294, DOI: 10.21175/RadJ.2016.01.05, http://www.rad-journal.org/paper.php?id=5


    Ivica Manić, Danijel Danković, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, and Ninoslav Stojadinović, “Effects of Pulsed Negative Bias Temperature Stressing in p-Channel Power VDMOSFETs”, Facta Universitatis, Series: Electronics and Energetics, vol. 29, no. 1 pp. 49-60 (2016) , ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1601049M http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/1288/782


    Albena Paskaleva, Dencho Spassov, Danijel Danković,Consideration of Conduction Mechanisms in High-k Dielectric Stacks as a Tool to Study Electrically Active Defects”, Facta Universitatis, Series: Electronics and Energetics, vol. 30, no. 4, pp. 511-548 (2017) , ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1704511P http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/2879/1712

  • Radovi na naučnim skupovima međunarodnog značaja:

    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović “Spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Proc. 23rd International Conference on Microelectronics (MIEL 2002), Niš (Yugoslavia), May 2002, pp. 717-722.      


    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, “Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Proc. 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2002), Rimini (Italy), October 2002, pp. 1465-1468.                        


    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev and Ninoslav Stojadinović, “Effects of negative gate bias stressing in thick gate oxides for power VDMOSFETs”, Proc. 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002), Grenoble (France), November 2002, pp. 41-44.


    Vojkan Davidović, Ivica Manić, Snežana Djorić-Veljković, Danijel Danković, Snežana Golubović, Sima Dimitrijev and Ninoslav Stojadinović, “Effects of negative gate bias stressing in power VDMOSFETs”, Proc. 7th International Symposium on Microelectronics Technologies and Microsystems (MTM 2003), Sozopol (Bulgaria), September 2003, pp. 150-155.


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović and Sima Dimitrijev, “Effects of electrical stressing in power VDMOSFETs”, Proc. 2003 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC03), Hong-Kong, December 2003, pp. 291-296. (rad po pozivu)


    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović and Sima Dimitrijev, “Electrical stressing effects in power VDMOSFETs”, Proc 7th International Seminar on Power Semiconductors (ISPS 2004), Prague (Czech Republic), September 2004, pp. 109-114.


    Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, and Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Proc. 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2005), Arcachon (France), October 2005, pp. 1343-1348.


    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović “Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs”, Proc. 25th International Conference on Microelectronics (MIEL 2006), Belgrade (Serbia), May 2006, pp. 639-644.


    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović “Lifetime Estimation in NBT Stressed P-Channel Power VDMOSFETs”, Proc. 25th International Conference on Microelectronics (MIEL 2006), Belgrade (Serbia), May 2006, pp. 645-648.


    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković, and Sima Dimitrijev “Turn-Around of Threshold Voltage in Gate Bias Stressed P-Channel Power VDMOS Transistors”, Proc 8th International Seminar on Power Semiconductors (ISPS 2006), Prague (Czech Republic), August 2006, pp. 85-89.


    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Proc. 17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal (Germany), October 2006, pp. 1828-1833.


    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, and Snežana Golubović, “Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs”, Invited paper – Proc. 8th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS ‘07), Niš (Serbia), September 2007, pp. 275-282. (rad po pozivu)


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Proc. 18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2007), Arcachon (France), October 2007, pp. 1400-1405.


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović “New Approach in Estimating the Lifetime in NBT Stressed P-Channel Power VDMOSFETs”, Proc. 26th International Conference on Microelectronics (MIEL 2008), Niš (Serbia), May 2008, pp. 599-602.


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović “Negative Bias Temperature Stress and Annealing Effects in p-Channel Power VDMOSFETs”, 9th International Seminar on Power Semiconductors (ISPS 2008), Prague (Czech Republic), August 2008, 127-132.


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Ninoslav Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2008), Maastricht (The Netherlands), September 2008, 1313-1317.


    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “Effects of low gate bias annealinig in NBT stressed n-channel power VDMOSFETs”, Proc. 20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2009), Arcachon (France), October 2009, pp. 1003-1007.


    Snežana Djorić-Veljković, Danijel Danković, A. Prijić,  Ivica Manić, Vojkan Davidović, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović “Degradation of p-channel Power VDMOSFETs under Pulsed NBT Stress”, Proc. 27th International Conference on Microelectronics (MIEL 2010), Niš (Serbia), May 2010, pp. 443-446.


    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Aneta Prijić, Vojkan Davidović, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović “Negative Bias Temperature Instability in p-Channel Power VDMOSFETs Under Pulsed Bias Stress”, 10th International Seminar on Power Semiconductors (ISPS 2010), Prague (Czech Republic), September 2010, 173-178.


    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Zoran Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Proc. 21th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), Montecassino and Gaeta (Italy), October 2010, pp. 1278-1282.


    Ivica Manić, Danijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “ NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static under the static and pulsed NBT stress conditions ”, Proc. 22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011), Bordeaux (France), October 2011, pp. 1540-1543.


    Danijel Danković, Aneta Prijić, Ivica Manić, Zoran Prijić and Ninoslav Stojadinović “Measurements of Negative Bias Temperature Instability (NBTI) in p-channel Power VDMOSFETs”, 11th International Seminar on Power Semiconductors (ISPS 2012), Prague (Czech Republic), August 2012, 240-245.


    Danijel Danković and Miloš Marjanović “The Importance of the IEEESTEC Students’ Projects Confernce”, 2013 International Conference on Technology Transfer (ICTT 2013), Niš (Serbia), June 2013, 265-268.


    Zoran Prijić, Danijel Danković, Aneta Prijić, Ivica Manić, Ninoslav Stojadinović, “ A Method for Measuring NBTI Degradation in p-channel Power VDMOSFETs ”, Proc. 50th International Conference on Microelectronics, Devices and Materials (MIDEM 2014), Ljubljana (Slovenia), October 2014, pp. 9-16. (invited paper)


    Miloš Marjanović, Vesna Paunović, Zoran Prijić, Aneta Prijić and Danijel Danković, “On the Measurement Methods for Dielectric Constant Determination in Nb/BaTiO3 Ceramics”, Proc. 10th International Symposium on Industrial Electronics (INDEL 2014), Banja Luka (Republika Srpska), 6-8 Novembar 2014, str. 38-41.


    Miloš Marjanović, Danijel Danković, Vojkan Davidović, Aneta Prijić, Ninoslav Stojadinović, Zoran Prijić, Nebojša Janković, “Modeling and PSPICE aimulation of radiation stress influence on threshold voltage shifts in p-channel power VDMOS transistors”, Proc. 3rd International Conference on Radiation and Applications in Various Fields of Research (RAD 2015), Budva (Montenegro), 8-12 June 2015, str. 405-408.


    Miloš Marjanović, Vesna Paunović, Danijel Danković, Aneta Prijić, Zoran Prijić, “Characterization and SPICE Modeling of Ceramic-Core Inductors at High Frequencies”, Program and the Book of Abstarcts Serbian Ceramic Society Conference – Advanced Ceramics and Application IV, New Frontiers in Multifunctional Material Science and Processig 2015, Belgrade (Serbia), September 2015, pp. 66-66.


    Miloš Marjanović, Danijel Danković, Aneta Prijić, Vesna Paunović, Zoran Prijić, “High frequency characterization and modelling of ceramic capacitors”, Proc. 12th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS ‘15), Niš (Serbia), October 2015, pp. 110-113.


    Miloš Marjanović, Aneta Prijić, Danijel Danković, Zoran Prijić, Vojkan Davidović, “PSPICE modeling of ionizing radiation effects in p-channel power VDMOS transistors”, Proc. 3rd International Conference on Electrical, Electronic and Computing Engineering (IcETRAN 2016), Zlatibor (Serbia), June 2016, MOI1.3.1-6. (nagrada za najbolji rad u stručnoj sekciji Mikroelektronika i optoelektronika)


    Aneta Prijić, Miloš Marjanović, Ljubomir Vračar, Danijel Danković, Dejan Milić, Zoran Prijić, “A Steady-State SPICE Modeling of the Thermoelectric Wireless Sensor Network Node”, Proc. 4th International Conference on Electrical, Electronics and Computing Engineering (IcETRAN 2017), Kladovo (Serbia), June 2017, MOI2.3.1-6.


    Vojkan Davidović, Albena Paskaleva, Dencho Spassov, Elzbieta Guziewicz, Tomasz Krajewski, Snežana Golubović, Snežana Djorić-Veljković, Ivica Manić, Danijel Danković, and Ninoslav Stojadinović, “Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks”, Proc. 30th International Conference on Microelectronics (MIEL 2017), Niš (Serbia), October 2017, pp. 143-146.  


    Danijel Danković, Ivica Manić, Ninoslav Stojadinović, Zoran Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Albena Paskaleva, Dencho Spassov, and Snežana Golubović, “Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs”, Proc. 30th International Conference on Microelectronics (MIEL 2017), Niš (Serbia), October 2017, pp. 147-151.


    Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Srboljub Stanković, Aneta Prijić, Zoran Prijić, Ivica Manić, Danijel Danković, “ NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Proc. 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Aalborg (Denmark), October 2018, pp. 135-1414.


     

  • Radovi na domaćim naučnim skupovima:

    Vojkan Davidović, Snežana Golubović, Ivica Manić, Danijel Danković, Ninoslav Stojadinović, Snežana Djorić-Veljković, Sima Dimitrijev, “Primena tehnika za razdvajanje efekata naelektrisanja u oksidu i površinskih stanja kod VDMOS tranzistora snage”, Zbornik radova XLVI  konferencije za ETRAN, Banja Vrućica-Teslić (Republika Srpska), 03-06 Jun 2002, sveska IV, str. 145-148.


    Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, Sima Dimitrijev, “Efekti naprezanja negativnom polarizaciojom na gejtu kod VDMOS tranzistora snage”, Zbornik radova XLVII konferencije za ETRAN, Herceg Novi, 08-13 Jun 2003, sveska IV, str. 183-186.


    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković, Sima Dimitrijev, “Turn-around efekat napona praga kod PMOS tranzistora naprezanih pozitivnim naponima na gejtu”, Zbornik radova XLIX konferencije za ETRAN, Budva, 05-10 Jun 2005, sveska IV, str. 125-128.


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, “Nestabilnosti p-kanalnog VDMOS tranzistora snage usled naponsko-temperaturnih naprezanja sa negativnom polarizacijom gejta”, Zbornik radova XLIX konferencije za ETRAN, Budva, 05-10 Jun 2005, sveska IV, str. 129-132 (nagrada za najbolji rad u stručnoj komisiji Mikroelektronika i optoelektronika). 


    Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “NBTI in p- and n-channel power VDMOSFETs”, Zbornik radova 52. konferencije za ETRAN, Palić, 08-12 Jun 2008, str. MO1.1-1-4.


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković, “Lifetime evaluation in p-channel power VDMOSFETs under NBT stress”, Zbornik radova 52. konferencije za ETRAN, Palić, 08-12 Jun 2008, str. MO1.2-1-4 (nagrada za najbolji rad u stručnoj komisiji Mikroelektronika i optoelektronika).


    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković “Instabilities in p-channel power VDMOSFETs subjected to multiple negative bias temperature stressing and annealing”, Zbornik radova 53. konferencije za ETRAN, Vrnjačka banja, 15-19 Jun 2009, str. MO1.1-1-4.


    Djordje Kostadinović, Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković “Efekti spontanog oporavka kod p-kanalnih VDMOS tranzistora snage naprezanih jakim električnim poljem u oksidu gejta”, Zbornik radova 53. konferencije za ETRAN, Vrnjačka banja, 15-19 Jun 2009, str. MO1.2-1-4.


    Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Djorić-Veljković “Instabilities in p-channel power VDMOSFETs subjected to pulsed negative bias temperature stressing”, Zbornik radova 54. konferencije za ETRAN, Donji Milanovac, 7-10 Jun 2010, str. MO1.1-1-4.


    Danijel Danković, Vladica Sinadinović, Dušan Milošević, Zoran Prijić “Realizacija “inteligentnog” semafora na bazi Nanoboard-a 3000”, Zbornik radova 8. simpozijuma za industrijsku elektroniku (INDEL 2010), Banja Luka (Republika Srpska), 4-6 Novembar 2010, str.120-124.


    Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, Snežana Djorić-Veljković “Određivanje perioda pouzdanog rada p-kanalnih VDMOS tranzistora snage podvrgnutih kontinualnim i impulsnim NBT naprezanjima”, Zbornik radova 56. konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.1-1-4.


    Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “Modelovanje napona praga p-kanalnih VDMOS tranzistora snage tokom naponsko temperaturnih naprezanja i odžarivanja”, Zbornik radova 56. konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.2-1-4.


    Danijel Danković, Aneta Prijić, Ivica Manić, Zoran Prijić, Ninoslav Stojadinović, “Naponsko temperaturna naprezanja p-kanalnih VDMOS tranzistora snage”, Zbornik radova 57. konferencije za ETRAN, Zlatibor, 3-6 Jun 2013, str. MO1.1-1-4 (nagrada za najbolji rad u stručnoj sekciji Mikroelektronika i optoelektronika).


    Snežana Đorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Uticaj odžarivanja na oporavak električno naprezanih p-kanalnih VDMOS tranzistora snage”, Zbornik radova 57. konferencije za ETRAN, Zlatibor, 3-6 Jun 2013, str. MO1.2-1-6 (nagrada – predloženi rad u stručnoj sekciji Mikroelektronika i optoelektronika za štampu u časopisu).


    Miloš Marjanović, Danijel Danković, Aneta Prijić, Zoran Prijić, Vojkan Davidović, Nebojša Janković, “Modeliranje i PSPICE simulacija NBTI efekata kod VDMOS tranzistora”, Zbornik radova 58. konferencije za ETRAN, Vrnjačka Banja, 2-5 Jun 2014, str. MO1.1.1-5 (nagrada –Najbolji rad mladog istraživača na sekciji MO).


    Aleksandar Ilić, Zoran Prijić, Aneta Prijić, Vojkan Davidović, Danijel Danković, Ninoslav Stojadinović, “Mobilna eksperimentalna postavka za određivanje napona praga VDMOS tranzistora snage”, Zbornik radova 58. konferencije za ETRAN, Vrnjačka Banja, 2-5 Jun 2014, str. MO1.2.1-4.


    Vojkan Davidović, Albena Paskaleva, Dencho Spassov, Elzbieta Guziewicz, Tomasz Krajewski, Snežana Golubović, Snežana Djoric-Veljković, Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “Ispitivanje višeslojnih HfO2/Al2O3struktura za memorijske komponente”, Zbornik radova 61. konferencije za ETRAN, Kladovo, 5-8 Jun 2017, str. MO1.1.1-4. (nagrada –Najbolji rad na sekciji MO).


    Miloš Marjanović, Vesna Paunović, Aneta Prijić, Danijel Danković, Zoran Prijić, “Analiza debljine silicijum dioksida pomoću TCAD simulatora”, Zbornik radova 61. konferencije za ETRAN, Kladovo, 5-8 Jun 2017, str. NM1.3.1-5.


    Miloš Marjanović, Danijel Danković, “ Deset godina Konferencije studentskih projekata IEEESTEC”, Zbornik radova 10th Student Projects Conference, Niš, 23 Novembar 2017, str. 1-4.


    Vojkan Davidović, Danijel Danković, Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, “Elektrohemijski procesi kod p-kanalnih VDMOS tranzistora snage pri sukcesivnom NBT naprezanju i ozračivanju”, Zbornik radova 62. konferencije za ETRAN, Palić, 11-14 Jun 2018, str. 299-303.


    Miloš Đorđević, Branislav Jovičić, Bojan Milosavljević, Vesna Paunović, Danijel Danković, “ Sistem pametne kuće zasnovan na GSM mobilnoj i IoT tehnologiji”, Zbornik radova 11th Student Projects Conference, Niš, 29 Novembar 2018, str. 29-34.

  • Tehnička rešenja:

    Danijel Danković, Aneta Prijić, Ivica Manić, Ljubomir Vračar, Zoran Prijić, and Ninoslav Stojadinović “Nova metoda za ispitivanje nestabilnosti usled naponsko temperaturnih naprezanja VDMOS tranzistora snage”, Priznato tehničko rešenje spada u kategoriju: nova metoda, softver M85 (2012). Nastavno-naučno veće Elektronskog fakulteta u Nišu, Broj 17/10-010/13-001 od 17.01.2013.

Poslednji put izmenjeno nedelja, 09 decembar 2018 18:47