Naučne publikacije akademskog osoblja

Naučne publikacije i umetničke reference akademskog osoblja

Univerzitet u Nišu

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Datum kreiranja: 27.01.2014.

Vojkan S. Davidović

Dodatne informacije

  • Lični podaci

  • Datum rođenja: 11. Decembar 1963.
  • Mesto rođenja: Svrljig

  • Obrazovanje

  • Fakultet: Elektronski fakultet Niš
  • Odsek / Grupa / Smer: Mikroelektronika
  • Godina diplomiranja: 1990.

  • Spisak publikacija

  • Monografije i poglavlja u monografijama:

    1.      Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, and Ninoslav Stojadinović “Implications of Negative Bias Temperature Instability in Power MOS Transistors” in “Micro Electronic and Mechanical Systems”, edited by Kenichi Takahata, IN-TECH Press, Boca Raton, pp. 19.319-19.342 (2009). ISBN 978-953-307-027-8, http://www.intechopen.com/books/show/title/micro-electronic-and-mechanical-systems


    2.      Ninoslav Stojadinović, Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Snežana Golubović, Zoran Prijić, “Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors” in “Bias Temperature Instability for Devices and Circuits”, Editor Tibor Grasser, Springer New York, pp. 533-559 (2014), ISBN: 978-1-4614-7908-6 (Print) 978-1-4614-7909-3 (Online), DOI: 10.1007/978-1-4614-7909-3_20, http://link.springer.com/chapter/10.1007/978-1-4614-7909-3_20


    3.      Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Vojkan Davidović, EFEKTI NAPREZANJA OKSIDA GEJTA VDMOS TRANZISTORA SNAGE, Univerzitet u Nišu, Elektronski fakultet (2006), Edicija: Monografije, ISBN 86-85195-16-0
  • Radovi u časopisima sa IMPACT faktorom:

    1.      Ninoslav Stojadinović, Snežana Djorić, Snežana Golubović, and Vojkan Davidović, “Separation of the Irradiation Induced Gate Oxide Charge and Interface Traps Effects in Power VDMOSFETs”, Electronics Letters, Vol. 30, pp. 1992-1993 (1994). ISSN: 0013-5194, DOI: 10.1049/el:20020281,  http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=30


    2.      Ninoslav Stojadinović, Momčilo Pejović, Snežana Golubović, Goran Ristić, Vojkan Davidović, and Sima Dimitrijev, “Effects of Radiation-Induced Oxide-Trapped Charge on Mobility in P-Channel MOSFETs”, Electronics Letters, Vol. 31, pp. 497-498 (1995). ISSN: 0013-5194, DOI: 10.1049/el:20020281,  http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=31


    3.      Ninoslav Stojadinović, Snežana Golubović, Vojkan Davidović, Snežana Djorić-Veljković and Sima Dimitrijev, „Modeling Radiation-Induced Mobility Degradation in MOSFETs”, Physica Status Solidi (a), Vol. 169, pp. 63-66 (1998). ISSN: 0031-8965,  DOI: 10.1002/(SICI)1521-396X(199809)169:1<63::AID-PSSA63>3.3.CO;2-W http://onlinelibrary.wiley.com/doi/10.1002/(SICI)1521-396X(199809)169:1<63::AID-PSSA63>3.0.CO;2-4/abstract


    4.      Snežana Golubović, Snežana Djorić-Veljković, Vojkan Davidović, and Ninoslav Stojadinović, “Modeling of g-Irradiation and Lowered Temperature Effects in Power VDMOS Transistors”, Japanese Journal of Applied Physics, Vol. 38, pp. 4699-4702 (1999).


    Ninoslav Stojadinović, Snežana Golubović, Snežana Djorić-Veljković, and Vojkan Davidović, “Correction to “Modeling of g-Irradiation and Lowered Temperature Effects in Power VDMOS Transistors””, Japanese Journal of App. Phys., Vol. 40 (3A), p. 1530 (2001) ISSN: 0021-4922, DOI: 10.1143/JJAP.38.4699 http://adsabs.harvard.edu/abs/1999JaJAP..38.4699G,  http://jjap.jsap.jp/link?JJAP/38/4699/


    5.      Ivica Manić, Zoran Pavlović, Zoran Prijić, Vojkan Davidović, Ninoslav Stojadinović, “Analytical Modelling of Electrical Characteristics in g-Irradiated Power VDMOS Transistors”, Microelectronics Journal, Vol. 32, pp.485-490 (2001). ISSN: 0026-2692, DOI: 10.1016/S0026-2692(01)00019-2,  http://www.sciencedirect.com/science/article/pii/S0026269201000192


    6.      Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Mechanisms of Positive Gate Bias Stress Induced Instabilities in Power VDMOSFETs”, Microelectronics Reliability, Vol. 41, pp. 1373-1378 (2001). ISSN: 0026-2714,  DOI: 10.1016/S0026-2714(01)00143-3,  http://www.sciencedirect.com/science/journal/00262714/41/9-10


    7.      Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Radiation Hardening of Power VDMOSFETs Using Electrical Stress”, Electronics Letters, Vol. 38, pp. 431-432 (2002). ISSN: 0013-5194, DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=38


    8.      Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs”, Microelectronics Reliability, Vol. 42, pp. 669-677 (2002), ISSN 0026-2714, DOI: 10.1016/S0026-2714(02)00039-2,  http://www.sciencedirect.com/science/journal/00262714/42/4-5


    9.      Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, “Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Microelectronics Reliability, Vol. 42, pp. 1465-1468 (2002), ISSN 0026-2714, DOI: 10.1016/S0026-2714(02)00171-3, http://www.sciencedirect.com/science/article/pii/S0026271402001713


    10.    Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Effects of burn-in stressing on radiation response of power VDMOSFETs”, Microelectronics Journal, Vol. 33, pp. 899-905 (2002), ISSN 0026-2692 DOI: 10.1016/S0026-2692(02)00121-0,  http://www.sciencedirect.com/science/article/pii/S0026269202001210


    11.    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs”, Microelectronics Reliability, Vol. 43, pp. 1455-1460 (2003), ISSN 0026-2714,  DOI: 10.1016/S0026-2714(03)00258-0,  http://www.sciencedirect.com/science/journal/00262714/43/9-11


    12.    Dimitrios N. Kouvatsos, Vojkan Davidović, G.J. Papaioannou, Ninoslav Stojadinović, L. Michalas, M. Exarchos, Apostolos T. Voutsas, Dimitrios Goustouridis, “Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors”, Microelectronics Reliability, Vol. 44, pp. 1631-1636 (2004), ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2004.07.082,  http://www.sciencedirect.com/science/journal/00262714/44/9-11


    13.    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Effects of electrical stressing in power VDMOSFETs” Microelectronics Reliability, vol. 45, 2005, pp. 115-122 (2005), ISSN 0026-2714,  DOI: 10.1016/j.microrel.2004.09.002,   http://www.sciencedirect.com/science/article/pii/S0026271404003786


    14.    Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica. Manić, Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs” Microelectronics Reliability, vol. 45, pp. 1343-1348 (2005), ISSN 0026-2714,   DOI: 10.1016/j.microrel.2005.07.018,  http://www.sciencedirect.com/science/article/pii/S002627140500168X


    15.    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Microelectronics Reliability, Vol. 46, pp. 1828-1833 (2006), ISSN 0026-2714, DOI: 10.1016/j.microrel.2006.07.077,  http://www.sciencedirect.com/science/article/pii/S0026271406002447


    16.    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Electrical stressing effects in commercial power VDMOSFETs” IEE Proc. Circuits, Devices & Systems, Vol. 153, pp. 281-288 (2006), ISSN 1350-2409,   DOI: 10.1049/ip-cds:20050050, http://digital-library.theiet.org/IET-CDS


    17.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Microelectronics Reliability, Vol. 47, pp. 1400-1405 (2007), DOI: 10.1016/j.microrel.2007.07.022,  http://linkinghub.elsevier.com/retrieve/pii/S0026271407002910


    18.    Vojkan Davidović, Dimitrios N. Kouvatsos, Ninoslav Stojadinović, Apostolos T. Voutsas, “Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycristalline silicon thin film transistors”, Microelectronics Reliability, Vol. 47, pp. 1841-1845 (2007),  DOI: 10.1016/j.microrel.2007.07.025,  https://www.academia.edu/15447562


    19.    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs”, IET Circuits, Devices & Systems, Vol. 2, no. 2, pp. 213-221 (2008), ISSN 1751-858X,   DOI: 10.1049/iet-cds:20070173,  http://ieeexplore.ieee.org/Xplore/login.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F4123966%2F4490219%2F04490224.pdf%3Farnumber%3D4490224&authDecision=-203


    20.    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Djorić-Veljković, Sima Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese Journal of Applied Phyics, Vol. 47, pp. 6272-6276 (2008), ISSN 1347-4065 (online) 0021-4922 (print)  DOI: 10.1143/JJAP.47.6272,  http://jjap.jsap.jp/link?JJAP/47/6272/


    21.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, Microelectronics Reliability, Vol. 48, pp. 1313-1317 (2008), ISSN 0026-2714,  DOI: 10.1016/j.microrel.2008.06.015, http://linkinghub.elsevier.com/retrieve/pii/S0026271408002023


    22.    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Effects of low gate bias annealinig in NBT stressed n-channel power VDMOSFETs”, Microelectronics Reliability, Vol. 49, pp. 1003-1007 (2009),  ISSN 0026-2714, DOI: 10.1016/j.microrel.2009.07.010,  http://linkinghub.elsevier.com/retrieve/pii/S0026271409002418


    23.    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Microelectronics Reliability, Vol. 50, pp. 1278-1282 (2010), ISSN 0026-2714, DOI: 10.1016/j.microrel.2010.07.122, http://linkinghub.elsevier.com/retrieve/pii/S0026271410003951


    24.    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, and Ninoslav Stojadinović, “Annealing of Radiation-Induced Defects in Burn-in Stressed Power VDMOSFETs”, Nuclear Technol. & Radiation Protection, Vol. 26, No. 1, pp. 18-24 (2011), ISSN 1451-3994, DOI: 10.2298/NTRP1101018D,         http://ntrp.vinca.rs/2011_1/Djoric-Veljkovic2011_1.html


    25.    Ivica Manić, Danijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions”, Microelectronics Reliability, Vol. 51, pp. 1540-1543 (2011), ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.06.004, http://www.sciencedirect.com/science/article/pii/S0026271411001946


    26.    Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs”, Informacije MIDEM, Journal of Microlectronics, Electronic Components and Materials, vol. 43, no. 1, pp. 58-66 (2013), ISSN 0352-9045, UDK: 621.3:(53+54+621+66)(05)(497.1)=00, http://www.midem-drustvo.si/Journal%20papers/MIDEM_43%282013%291p58.pdf


    27.    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, and Ninoslav Stojadinović, “The comparison of gamma-irradiation and electrical stress influences on oxide and interface defects in power VDMOSFETs”, Nuclear Techn. & Radiation Protection, Vol. 28, no. 4, pp. 406-414 (2013), ISSN 1451-3994, UDC 621.039+614.876:504.06, DOI: 0.2298/NTRP1304406D,     http://ntrp.vin.bg.ac.rs/2013_4/DjoricVeljkovic2013_4.htm


    28.    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović and Ninoslav Stojadinović, “Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors”, Japanese Journal of Applied Physics, Vol. 54, no. 6, pp. 064101-1-064101-7 (2015), ISSN 1347-4065 (online) 0021-4922 (print) DOI: 10.7567/JJAP.54.064101,  http://iopscience.iop.org/article/10.7567/JJAP.54.064101/meta;jsessionid=DFF6F0F205410326914C50155654C1E1.c1.iopscience.cld.iop.org


    29.    Danijel Danković, Ivica Manić, Aneta Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Ninoslav Stojadinović, Zoran Prijić and Snežana Golubović, “Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation”, Semiconductor Science and Technology, Vol. 30, no. 10, p. 105009 (9pp) (2015), ISSN 1361-6641, DOI: 10.1088/0268-1242/30/10/105009,  http://iopscience.iop.org/article/10.1088/0268-1242/30/10/105009


    30.    Danijel Danković, Ninoslav Stojadinović, Zoran Prijić, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković and Snežana Golubović,“ Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET”, Chinese Physics B, vol. 24, no. 10, pp. 106601-1-106601-9 (2015), ISSN 1674-1056, DOI: 10.1088/1674-1056/24/10/106601,  http://iopscience.iop.org/article/10.1088/1674-1056/24/10/106601


    31.    Vojkan Davidović, Danijel Danković, Aleksandar Ilić, Ivica Manić, Snežana Golubović, Snežana Djorić-Veljković, Zoran Prijić, Ninoslav Stojadinović, “NBT and irradiation effects in negative bias temperature instability in p-channel power VDMOSFET”, IEEE Transaction on Nuclear Science, Vol. 63, no. 2, pp. 1268-1275 (2016), ISSN 0018-9499, DOI: 10.1109/TNS.2016.2533866,   http://ieeexplore.ieee.org/document/7454831/


    32.    Danijel Danković, Ivica Manić, Vojkan Davidović, Aneta Prijić, Miloš Marjanović, Aleksandar Ilić, Zoran Prijić, Ninoslav Stojadinović, “ On the recoverable and permanent components of NBTI in p-channel power VDMOSFETs”, IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 522-531 (2016), ISSN 1530-4388, DOI: 10.1109/TDMR.2016.2598557,  http://ieeexplore.ieee.org/document/7536114/


    33.    Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Zoran Prijić, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Ninoslav Stojadinović, “A review of pulsed NBTI in P-channel power VDMOSFETs”, Microelectronics Reliability, vol. 82, pp. 28-36 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.01.003,   https://www.sciencedirect.com/science/article/pii/S0026271418300039


    34. Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Srboljub Stanković, Aneta Prijić, Zoran Prijić, Ivica Manić, Danijel Danković, “ NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Microelectronics Reliability, vol. 88-90, pp. 135-141 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.07.138,  https://www.sciencedirect.com/science/article/pii/S0026271418307224


    35. Vojkan Davidović, Danijel Danković, Aleksandar Ilić, Ivica Manić, Snežana Golubović, Snežana Djorić-Veljković, Zoran Prijić, Aneta Prijić, and Ninoslav Stojadinović, “Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors”, Japanese Journal of Applied Physics, Vol. 57, p 044101 (10pp) (2018), https://doi.org/10.7567/JJAP.57.044101


    36. Dencho Spassov, Albena Paskaleva, Elzbieta Guziewicz, Vojkan Davidović, Srboljub Stanković, Snežana Djorić-Veljković, Tzvetan Ivanov, Todor Stanchev and Ninoslav Stojadinović, “Radiation Tolerance and Charge-Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics”, MDPI Materials, 14(4):849 (February 2021),  ISSN: 1996-1944, DOI: 10.3390/ma14040849,  https://doi.org/10.3390/ma14040849,


    37. Danijel Danković, Vojkan Davidović, Snežana Golubović, Sandra Veljković, Nikola Mitrović, Snežana Djorić-Veljković, “Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs”, Microelectronics Reliability, Vol. 126(8):114273 (October 2021), pp. 114273-1- 114273-5 ISSN: 0026-2714, https://www.sciencedirect.com/science/article/abs/pii/S0026271421002390,  DOI: 10.1016/j.microrel.2021.114273,


    38. Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Srboljub Stanković, Marko Andjelković, Zoran Prijić, Ivica Manić, Aneta Prijić, Goran Ristić, Danijel Danković, “Response of Commercial p-Channel Power VDMOS Transistors to Irradiation and Bias Temperature Stress ”, Journal of Circuits, Systems and Computers, 31(18) (April 2022), Open Access, Vol. 31(18), Article number 2240003, pp. 2240003-1-25 (2022), DOI: 10.1142/S0218126622400035,


    39. Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Emilijan Živanović, Zoran Prijić, Danijel Danković, “Impact of negative bias temperture instability on p-channel power VDMOSFET used in practical applications”, Microelectronics Reliability, Vol. 138(9), Article number 114634, pp. 114634-1-114634-5 (November 2022) ISSN: 00262714, DOI: 10.1016/j.microrel.2022.114634,
  • Radovi u ostalim časopisima:

    1.      Vojkan Davidović, Angelina Midić, “Efekti gama zračenja kod CMOS tranzistora”, Naučni podmladak, Stručni časopis studenata Univerzitet u Nišu, Vol. XIX, стр. 37-43, (1987). YU ISSN 0352-583x


    2.      Ninoslav Stojadinović, Ivica. Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Effects of Gate Bias Stressing in Power VDMOSFETs“, Serbian Journal of Electrical Engineering, Vol. 1, No. 1, pp. 89-101 (2003), YU ISSN 1451-4869 (Print), 2217-7183 (Online), DOI: 10.2298/SJEE0301089S, http://www.journal.ftn.kg.ac.rs/Vol_1-1/Vol_1-1.htm


    3.      Danijel Danković, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, “Lifetime Estimation in NBT-Stressed P-Channel Power VDMOSFETs“, Facta Universitatis, Series: Automatic Control and Robotics, Vol. 11, No. 1, pp. 15-23 (2012), ISSN 1820-6417 (Print), 1820-6425 (Online), UDK: 621.3.049.77   621.3.019.3   621.382.323,  http://facta.junis.ni.ac.rs/acar/acar201201/acar20120102.pdf


    4.      Miloš Marjanović, Danijel Danković, Aneta Prijić, Zoran Prijić, Nebojša Janković, Vojkan Davidović “Modeling and PSPICE Simulation of NBTI Effects in VDMOS Transistors”, Serbian Journal of Electrical Engineering, vol. 12, no. 1, pp. 69-79 (2015), ISSN 1451-4869 (Print), 2217-7183 (Online), DOI: 10.2298/SJEE1501069M   http://www.journal.ftn.kg.ac.rs/Vol_12-1/


    5.      Ivica Manić, Danijel Danković, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić, and Ninoslav Stojadinović, “Effects of Pulsed Negative Bias Temperature Stressing in p-Channel Power VDMOSFETs”, Facta Universitatis, Series: Electronics and Energetics, (Invited paper) Vol. 29, no. 1 pp. 49-60 (2016) , ISSN 0353-3670 (Print), 2217-5997 (Online), DOI: 10.2298/FUEE1601049M   http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/1288/782


    6.      Miloš Marjanović, Danijel Danković, Vojkan Davidović, Aneta Prijić, Ninoslav Stojadinović, Zoran Prijić, Nebojša Janković,“Modeling and PSPICE simulation of radiation stress influence shifts in p-channel power VDMOS transistors”, Radiation & Applications Journal (in Physics, Chemistry, Bilogy, Medical Sciences, Engineering and Environmental Sciences), Vol. 1, no. 1, pp. 26-30 (2016), ISSN 2466-4294 (Online), DOI: 10.21175/RadJ.2016.01.05, http://www.rad-journal.org/paper.php?id=5


    7.      Vojkan Davidović, Danijel Danković, Snežana Golubović, Snežana Djorić-Veljković, Ivica Manić, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, Srboljub Stanković, “NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs”, Facta Universitatis, Series: Electronics and Energetics, Vol. 31, pp. 367-388 (2018), ISSN 0353-3670 (Print) 2217-5997 (Online), https://doi.org/10.2298/FUEE1803367D


    8.      Snežana Đorić-Veljković, Nikola Mitrović, Sandra Veljković Vojkan Davidović, Emilija Živanović, Ivica Manić, Danijel Danković, “The role of OLED devices in the development of smart cities”, Facta Universitatis - Series: Architecture and Civil Engineerings, Vol. , pp. 1-11 (2024), ISSN 0354-4605 (Online),  DOI: 10.2298/FUACE230630032D
  • Radovi na naučnim skupovima međunarodnog značaja:

    1.      Snežana Djorić-Veljković, Vojkan Davidović, “Analysis of Gamma-Irradiation Induced Oxide Charge and Interface Trap Effects in Power VDMOSFETs”, Proc. 20th International Conference on Microelectronics (MIEL 1995), Niš (Yugoslavia), September 1995, pp. 259-262.


    2.      Ninoslav Stojadinović, Snežana Golubović, Vojkan Davidović, Snežana Djorić-Veljković, Sima Dimitrijev, “Modeling of Radiation-Induced Mobility Degradation in MOSFETs”, Proc. 21st International Conference on Microelectronics (MIEL 1997), Niš (Yugoslavia), September 1997, pp. 355-356.


    3.      Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Room Temperature Relaxation of Irradiated and Cooled Power VDMOS Transistors”, Proc. 6th International Conference on Mixed Design of Integrated Circuits And Systems (MIXDES’99), Krakow (Poland), June 1999, pp. 291-294.


    4.      Snežana Djorić-Veljković, Snežana Golubović, Vojkan Davidović, Ninoslav Stojadinović, “Power VDMOS Transistors Response to Lowered Temperature Conditions”, Proc. 22nd International Conference on Microelectronics (MIEL 2000), Niš (Yugoslavia), 14-17 May 2000, pp. 383-386.


    5.      Zoran Pavlović, Ivica Manić, Zoran Prijić, Vojkan Davidović, Ninoslav Stojadinović, “Influence of Gate Oxide Charge Density on VDMOS Transistor ON-Resistance”, Proc. 22nd  International Conference on Microelectronics (MIEL 2000), Niš (Yugoslavia), 14-17 May 2000, pp. 663-666.


    6.      Ivica Manić, Zoran Pavlović, Zoran Prijić, Vojkan Davidović, Ninoslav Stojadinović, “Influence of g-Irradiation on Electrical Characteristics of Power VDMOS Transistors”, Proc. 5th International Seminar on Power Semiconductors (ISPS 2000), Prague (Czech Republic), 30 Aug.-1 Sept. 2000, pp. 203-208.


    7.      Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, and Ninoslav Stojadinović, “Radiation Effects in Low-Temperature Stressed Power VDMOS Transistors”, Proc. 23rd International Semiconductor Conference (CAS 2000), Sinaia (Romania), October 2000, pp. 337-340.


    8.      Ivica Manić, Zoran Pavlović, Snežana Golubović, Snežana Djorić-Veljković, Vojkan Davidović, Ninoslav Stojadinović, “Effects of g-Irradiation on Drain Current and Transconductance in Power VDMOS Transistors”, Proc. 8th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2001), Zakopane (Poland), 21–23 June 2001, pp. 333-338.


    9.      Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Effects of Elevated-Temperature Bias Stressing on Radiation Response in Power VDMOSFETs”, Proc. 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001), Singapore, 9 – 13 July 2001, pp. 243-248.


    10.    Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, "Gamma-Irradiation Effects in Power MOSFETs for Applications in Communications Satellites", Proc. 5th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS 2001), Niš (Yugoslavia), September 2001, pp.395-400.


    11.    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs”, Proc. 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2001), Bordeaux (France), October 2001, pp.1373-1378.


    12.    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Sima Dimitrijev, “Effects of Positive Gate Bias Stressing and Subsequent Recovery Treatment in Power VDMOSFETs”, Proc. 4th IEEE International Caracas Conference on Devices, Circuits, and Systems (ICCDCS 2002), Aruba (Dutch Caribbean), 15-17 April 2002, pp. DO50-1 ‑ DO50-8 – (invited paper).


    13.    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, “Spontaneous Recovery of Positive Gate Bias Stressed Power VDMOSFETs, Proc. 23rd International Conference on Microelectronics (MIEL 2002), Niš (Yugoslavia), 12-15 May 2002, pp. 717-722.


    14.    Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Effects of Positive Gate Bias Stress on Radiation Response in Power VDMOSFETs”, Proc. 23rd  International Conference on Microelectronics (MIEL 2002), Niš (Yugoslavia), 12-15 May 2002, pp. 723-726.


    15.    Ninoslav Stojadinović, Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Radiation Response of Elevated-Temperature Bias Stressed Power VDMOSFETs”, Proc. 6th International Seminar on Power Semiconductors (ISPS 2002), Prague (Czech Republic), September 2002, pp. 69-74.


    16.    Ninoslav Stojadinović, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, “Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Proc. 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2002), Rimini (Italy), October 2002, pp. 1465-1468.


    17.    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Sima Dimitrijev, Ninoslav Stojadinovic, “Effects of Negative Gate Bias Stressing in Thick Gate Oxides for Power VDMOSFETs”, Proc. 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002), Grenoble (France), November 2002, pp. 41-44.


    18.    Vojkan Davidović, Ivica Manić, Snežana Djorić-Veljković, Danijel Danković, Snežana Golubović, Sima Dimitrijev, Ninoslav Stojadinović, “Effects of Negative Gate Bias Stressing in Power VDMOSFETs”, Proc. 7th International Symposium on Microelectronics Technologies and Microsystems (MTM 2003), Sozopol (Bulgaria), September 2003, pp. 150-155.


    19.    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Effects of Burn-in Stressing on Post-Irradiation Annealing Response of Power VDMOSFETs”, Proc. 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2003), Grenoble (France), October 2003, pp. 1455-1460.


    20.    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Effects of Electrical Stressing in Power VDMOSFETs” Proc. 2003 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 03), Hong Kong, December 2003, pp. 291-296 (invited paper).


    21.    Michalas Exarchos, Dimitrios N. Kouvatsos, G.J. Papaioannou, Vojkan Davidović, Ninoslav Stojadinović, L. Michalas, Apostolos T. Voutsas, “Characterization of Advanced Excimer Laser Crystallized Polysilicon Thin Film Transistors”, Proc. 24th International Conference on Microelectronics (MIEL 2004), Niš (Serbia and Montenegro), May 2004, pp. 697-700.


    22.    Snežana Djorić-Veljković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Burn-in Stressing Effects on Post-Irradiation Annealing Response of Power VDMOSFETs”, Proc. 24th International Conference on Microelectronics (MIEL 2004), Niš (Serbia and Montenegro), May 2004, pp. 701-704.


    23.    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Djorić-Veljković, Snežana Golubović, Sima Dimitrijev, “Electrical Stressing Effects in Power VDMOSFETs”, Proc. 7th International. Seminar on Power Semiconductors (ISPS 2004), Prague (Czech Republic), September 2004, pp. 109-114.


    24.    Dimitrios N. Kouvatsos, Vojkan Davidovic, G.J. Papaioannou, Ninoslav Stojadinovic, L. Michalas, M. Exarchos, Apostolos T. Voutsas, Dimitris Gousturidis, “Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors”, Proc. 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2004), Zurich (Switzerland), October 2004, pp. 1631-1636.


    25.    Ninoslav Stojadinović, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”,  Proc. 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2005), Bordeaux (France), October 2005, pp. 1343-1348.


    26.    Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Danijel. Danković, Snežana Golubović, Ninoslav Stojadinović, “Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs”, Proc. 25th International Conference on Microelectronics (MIEL 2006), Belgrade (Serbia and Montenegro), May 2006, pp. 639-644.


    27.    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Lifetime Estimation in NBT Stressed p-Channel Power VDMOSFETs”, Proc. 25th International Conference on Microelectronics (MIEL 2006), Belgrade (Serbia and Montenegro), May 2006, pp. 645-648.


    28.    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica. Manić, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power VDMOS Transistors”, Proc. 8th International Seminar on Power Semiconductors (ISPS 2006), Prague (Czech Republic), September 2006, pp. 85-89.    


    29.    Danijel Danković, Ivica Manić, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs”, Proc. 17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal (Germany), October 2006, pp. 1828-1833.


    30.    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, “Impact of negative bias Temperature Instabilities on lifetime in p-channel power VDMOSFETs”, Proc. 8th International Conference on Telecommunications in Modern Satelite, Cable and Broadcasting Services (TELSIKS’07), Niš (Serbia), September 2007, pp. 275-282 – (invited paper)


    31.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Proc. 18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2007), Bordeaux (France), October 2007, pp. 1400-1405.


    32.    Vojkan Davidović, Dimitrios N. Kouvatsos, Ninoslav Stojadinović, Apostolos T. Voutsas, “Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycristalline silicon thin film transistors”, Proc. 18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2007), Bordeaux (France), October 2007, pp. 1841-1845.


    33.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs”, Proc. 26th International Conference on Microelectronics (MIEL 2008), Niš (Serbia), May 2008, pp. 599-602.


    34.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative Bias Temperature Stress and Annealing Effects in p-Channel Power VDMOSFETs”, Proc. 9th International. Seminar on Power Semiconductors (ISPS 2008), Prague (Czech Republic), August 2008, pp. 127-132.


    35.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Ninoslav Stojadinović, “Negative bias temperature instability in n-channel power VDMOSFETs”, Proc. 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2008), Maastricht (The Netherlands), September 2008, pp. 1313-1317.


    36.    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović and Ninoslav Stojadinović, “Effects of low gate bias annealinig in NBT stressed n-channel power VDMOSFETs”, Proc. 20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2009), Bordeaux (France), October 2009, pp. 1003-1007.


    37.    Snežana Djorić-Veljković, Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović “Degradation of p-channel Power VDMOSFETs under Pulsed NBT Stress”, Proc. 27th International Conference on Microelectronics (MIEL 2010), Niš (Serbia), May 2010, pp. 443-446.               


    38.    Ivica Manić, Danijel Danković, Snežana Djorić-Veljković, Aneta Prijić, Vojkan Davidović, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović “Negative Bias Temperature Instability in p-Channel Power VDMOSFETs Under Pulsed Bias Stress”, Proc. 10th International Seminar on Power Semiconductors (ISPS 2010), Prague (Czech Republic), September 2010, 173-178.


    39.    Ninoslav Stojadinović, Danijel Danković, Ivica Manić, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović and Zoran Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Proc. 21th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), Montecassino Abbey and Gaeta (Italy), October 2010, pp. 1278-1282.


    40.    Ivica Manić, Daanijel Danković, Aneta Prijić, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Zoran Prijić and Ninoslav Stojadinović, “NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static under the static and pulsed NBT stress conditions”, Proc. 22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011), Bordeaux (France), October 2011, pp. 1540-1543.


    41.    Snežana Djorić-Veljković, Vojkan Davidović, Danijel Danković, Ivica Manić, Snežana Golubović, and Ninoslav Stojadinović “Recovery Treatment Effects on Gamma Radiation Response in Electrically Stressed Power VDMOS Transistors”, Proc. 29th International Conference on Microelectronics (MIEL 2014), Belgrade (Serbia), May 2014, pp. 293-296.


    42.    Miloš Marjanović, Danijel Danković, Vojkan Davidović, Aneta Prijić, Ninoslav Stojadinović, Zoran Prijić, Nebojša Janković, “Modeling and PSPICE simulation of radiation stress influence on threshold voltage shifts in p-channel power VDMOS transistors”, Proc. 3rd International Conference on Radiation and Applications in Various Fields of Research (RAD 2015), Budva (Montenegro), 8-12 June 2015, str. 405-408.


    43.    Miloš Marjanović, Aneta Prijić, Danijel Danković, Zoran Prijić, Vojkan Davidović, “PSPICE modeling of ionizing radiation effects in p-channel power VDMOS transistors”, Proc. 3rd International Conference on Electrical, Electronic and Computing Engineering (IcETRAN 2016), Zlatibor (Serbia), June 2016, MOI1.3.1-6. (nagrada za najbolji rad u stručnoj sekciji Mikroelektronika i optoelektronika)


    44.    Vojkan Davidović, Albena Paskaleva, Dencho Spassov, Elzbieta Guziewicz, Tomasz Krajewski, Snežana Golubović, Snežana Djorić-Veljković, Ivica Manić, Danijel Danković, and Ninoslav Stojadinović, “Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks”, Proc. 30th International Conference on Microelectronics (MIEL 2017), Niš (Serbia), October 2017, pp. 143-146.


    45.    Danijel Danković, Ivica Manić, Ninoslav Stojadinović, Zoran Prijić, Snežana Djorić-Veljković, Vojkan Davidović, Aneta Prijić, Albena Paskaleva, Dencho Spassov, and Snežana Golubović, “Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs”, Proc. 30th International Conference on Microelectronics (MIEL 2017), Niš (Serbia), October 2017, pp. 147-151.


    46.    Ninoslav Stojadinović, Snežana Djorić-Veljković, Vojkan Davidović, Snežana Golubović, Srboljub Stanković, Aneta Prijić, Zoran Prijić, Ivica Manić, Danijel Danković, “ NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Proc. 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Aalborg (Denmark), October 2018, pp. 135-141, (Invited paper).


    47.  D. Spassov, A. Paskaleva, V. Davidović, S. Djorić-Veljković, S. Stanković, N. Stojadinović, Tz. Ivanov, and T. Stanchev, “Impact of g Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks”, Proc. IEEE 31st International Conference on Microelectronics (MIEL 2019), Niš (Serbia), September 2019, pp. 59-62.


    48.  S. Ilić, A. Jevtić, S. Stanković, and V. Davidović, “Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry”, Proc. IEEE 31st International Conference on Microelectronics (MIEL 2019), Niš (Serbia), September 2019, pp. 67-70.


    49.  S. Stanković, D. Nikolić, N. Kržanović, L. Nadjdjerdj, and V. Davidović, “Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma nad X Radiation”, Proc. IEEE 31st International Conference on Microelectronics (MIEL 2019), Niš (Serbia), September 2019, pp. 181-184.


    50.  D. Danković, N. Mitrović, S. Veljković, V. Davidović, S. Djorić-Veljković, Z. Prijić, A. Paskaleva, D. Spassov, and S. Golubović, “A Review of the Electric Circuits for NBTI Modeling in p-Channel Power VDMOSFETs”, Proc. IEEE 32nd International Conference on Microelectronics (MIEL 2021), Niš (Serbia), September 2021, pp. 55-62 – (invited paper).


    51.  S. Veljković, N. Mitrović, S. Djorić-Veljković, V. Davidović, I. Manić, S. Golubović, A. Paskaleva, D. Spassov, Z. Prijić, A. Prijić, S. Stanković, and D. Danković, “Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors”, Proc. IEEE 32nd International Conference on Microelectronics (MIEL 2021), Niš (Serbia), September 2021, pp. 345-350.


    52.  D. Spassov, A. Paskaleva, E. Guziewicz, Tz. Ivanov, T. Stanchev, V. Davidović, S. Veljković, N. Mitrović, D. Danković, “Characterization of the Electric Breakdowns in Metal-Insulator-Silicon Capacitor Structures with HfO2/Al2O3 Layers for Non-Volatile Memory Applications”, Proc. IEEE 33rd International Conference on Microelectronics (MIEL 2023), Niš (Serbia), October 2023, pp. 63-66.


    53.  S. Veljković, N. Mitrović, S. Djorić-Veljković, V. Davidović, I. Manić, E. Živanović, S. Stanković, M. Andjelković. G. Ristić, A. Paskaleva, D. Spassov, and D. Danković, “Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperarture Stress and Irradiation”, Proc. IEEE 33rd International Conference on Microelectronics (MIEL 2023), Niš (Serbia), October 2023, pp. 277-280.


    54. Nikola Mitrović, Sandra Veljković, Snežana Đorić-Veljković, Vojkan Davidović, Snežana Golubović, Danijel Danković, Zoran Prijić “Methods for modeling of NBTS induced threshold voltage shift in p-channel power VDMOSFETs”, Advanced Ceramics and Applications IX, Belgrade, Serbia, 20-21. September 2021, p 53, ISBN 978-86-915627-8-6, http://www.serbianceramicsociety.rs/doc/aca01-10/aca9/ACA-IX-2021-Book-of-Abstracts.pdf


    55. Sandra Veljković, Nikola Mitrović, Snežana Đorić-Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, Danijel Danković, “Gate oxide degradation of electronic components due to irradiation and bias temperature stress”, Advanced Ceramics and Applications IX, Belgrade, Serbia, 20-21. September 2021, p 62, ISBN 978-86-915627-8-6, http://www.serbianceramicsociety.rs/doc/aca01-10/aca9/ACA-IX-2021-Book-of-Abstracts.pdf


    56.  Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Djorić-Veljković, Snežana Golubović, Emilija Živanović, Zoran Prijić, Danijel Danković, “Characterization of irradiated and NBT stressed p-channel power VDMOSFETs”, International Conference on Radiation in Various Fields of Research (RAD 2022), Herceg Novi (Montenegro), 13-17 June 2022, p. 124. ISBN: 978-86-901150-4-4. DOI: 10.21175/rad.spr.abstr.book.2022.27.10


    57. Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Đorić-Veljković, Snežana Golubović, Emilija Živanović, Zoran Prijić, Danijel Danković, "Threshold voltage shift in irradiated and pulsed NBT stressed p-channel VDMOS transistors", Elicsir Project Symposium, Nis (Serbia), 25-27 January 2023 (p. 44) http://www.symp.elicsir-project.eu/book_of_abstracts.php


    58.    Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Snežana Đorić-Veljković, Snežana Golubović, Emilija Živanović, Zoran Prijić, Danijel Danković, "Experimental setup and procedure for NBT stress and irradiation of VDMOS transistors", Elicsir Project Symposium, Nis, Serbia, 25-27 January 2023, p. 50, http://www.symp.elicsir-project.eu/book_of_abstracts.php
  • Radovi na domaćim naučnim skupovima:

    1.      Vojkan Davidović, Angelina Midić, “Efekti gama zračenja kod CMOS tranzistora”, Zbornik radova VII Jugoslavenskog savjetovanja o ulozi mikroračunala u sistemima procesnog upravljanja (MIPRO 88), Rijeka (SFRJ), 18-20 Maj 1988, str. 6-51.


    2.      Nebojša Janković, Vojkan Davidović, “O pokretljivosti šupljina u degenerisanom silicijumu N-tipa”, Zbornik radova prve srpske konferencije o mikroelektronici MIOPEL’92, Beograd, oktobar 1992, str. 1.1.9


    3.      Vojkan Davidović, “Analiza koeficijenata u modelu za pokretljivost kod ozračenih NMOS tranzistora”, Zbornik radova 38. konferencije za ETRAN, Niš, jun 1994, str. 31-32.


    4.      Snežana Đorić-Veljković, Vojkan Davidović, “Analiza efekata gama zračenjem indukovanih naelektrisanja u oksidu i površinskih stanja kod VDMOS tranzistora snage”, Zbornik radova 39. konferencije za ETRAN, Zlatibor, јun 1995, str. 139-142.


    5.      Snežana Đorić-Veljković, Snežana Golubović, Vojkan Davidović, Ninoslav Stojadinović, “Uticaj različitih naprezanja na formiranje latentnih defekata tokom spontanog oporavka VDMOS tranzistora snage”, Zbornik radova 43. konferencije za ETRAN, Zlatibor, 20-22. septembar 1999, sveska IV, str. 139-141.


    6.      Snežana Đorić-Veljković, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, “Efekti niskih temperatura kod VDMOS tranzistora snage”, Zbornik radova 44. konferencije za ETRAN, Soko Banja, 26-29. jun 2000, sveska IV, str. 185-188.


    7.      Ivica Manić, Vojkan Davidović, Zoran Prijić, Ninoslav Stojadinović, Zoran Pavlović, “Uticaj g-zračenja na električne karakteristike VDMOS tranzistora”, Zbornik radova 44. konferencije za ETRAN, Soko Banja, 26-29. jun 2000, sveska IV, str. 201-204.


    8.      Ninoslav Stojadinović, Ivica Manić, Snežana Golubović, Vojkan Davidović, Snežana Đorić-Veljković, Sima Dimitrijev, “Efekti naprezanja pozitivnom polarizacijom na gejtu kod VDMOS tranzistora snage”, Zbornik radova 45. konferencije za ETRAN, Bukovička Banja, 4-7. jun 2001, sveska IV, str. 200-203.


    9.      Snežana Đorić-Veljković, Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Uticaj temperaturno-naponskih testova pouzdanosti na efekte zračenja kod VDMOS tranzistora snage”, Zbornik radova 45. konferencije za ETRAN, Bukovička Banja, 4-7. jun 2001, sveska IV, str.  204-207.


    10.    Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Snežana Golubović, Snežana Đorić-Veljković, “Uticaj električnog naprezanja na otpornost VDMOS tranzistora snage na zračenje”, Zbornik radova 46. konferencije za ETRAN, Banja Vrućica-Teslić (Republika Srpska), 3-6. jun 2002, sveska IV, str. 142-144.


    11.    Vojkan Davidović, Snežana Golubović, Ivica Manić, Danijel Danković, Ninoslav Stojadinović, Snežana Đorić-Veljković, Sima Dimitrijev, “Primena tehnika za razdvajanje efekata naelektrisanja u oksidu i površinskih stanja kod VDMOS tranzistora snage”, Zbornik radova 46. konferencije za ETRAN, Banja Vrućica-Teslić (Republika Srpska), 3-6. jun 2002, sveska IV, str. 145-148.


    12.    Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, Snežana Đorić-Veljković, Sima Dimitrijev, “Efekti naprezanja negativnom polarizacijom na gejtu kod VDMOS tranzistora snage”, Zbornik radova 47. konferencije za ETRAN, Herceg Novi, 8-13. Jun 2003, sveska IV, str. 183-186.


    13.    Snežana Đorić-Veljković, Ninoslav Stojadinović, Ivica Manić, Vojkan Davidović, Snežana Golubović, “Uticaj temperaturno-naponskih testova pouzdanosti na efekte odžarivanja kod ozračenih VDMOS tranzistora snage”, Zbornik radova 47. konferencije za ETRAN, Herceg Novi, 8-13. Jun 2003, sveska IV, str. 187-190.


    14.    Vojkan Davidović, Ninoslav Stojadinović, Dimitrios Kouvatsos, Apostolos Voutsas, “Еfekti naponskog naprezanja i jonizujućeg zračenja kod TFT MOS tranzistora”, Zbornik radova 48. konferencije za ETRAN, Čačak, 6-10. јun 2004, sveska IV, str. 121-124.


    15.    Vojkan Davidović, Ninoslav Stojadinović, Danijel Danković, Snežana Golubović, Ivica Manić, Snežana Đorić-Veljković, Sima Dimitrijev, “Turn-around efekat napona praga kod PMOS tranzistora naprezanih pozitivnim naponima na gejtu”, Zbornik radova 49. konferencije za ETRAN, Budva, 5-10 jun 2005, sveska IV, str. 125-128.


    16.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Đorić-Veljković, “Nestabilnosti P-kanalnog VDMOS tranzistora snage usled naponsko-temperaturnih naprezanja sa negativnom polarizacijom gejta”, Zbornik radova 49. konferencije za ETRAN, Budva, 5-10 jun 2005, sveska IV, str. 129-132 (nagrada za najbolji rad u stručnoj komisiji Mikroelektronika i optoelektronika).


    17.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Đorić-Veljković, “Lifetime evaluation in p-channel power VDMOSFETs under NBT stress”, Zbornik radova 52. konferencije za ETRAN, Palić, 8-12. jun 2008, str. MO1.2-1-4. (nagrada za najbolji rad u stručnoj komisiji Mikroelektronika i optoelektronika).


    18.    Snežana Đorić-Veljković, Vojkan Davidović, Snežana Golubović, “Effects of NBT stressing and annealing in p-channel power VDMOSFETs”, Zbornik radova 52. konferencije za ETRAN, Palić, 8-12. jun 2008, str. MO1.3-1-4.


    19.    Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Đorić-Veljković, “Instabilities in p-channel power VDMOSFETs subjected to multiple negative bias temperature stressing and annealing”, Zbornik radova 53. konferencije za ETRAN, Vrnjačka Banja, 15-19 jun 2009, str. MO1.1-1-4.


    20.    Đorđe Kostadinović, Danijel Danković, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Đorić-Veljković, “Efekti spontanog oporavka kod p-kanalnih VDMOS tranzistora snage naprezanih jakim električnim poljima u oksidu gejta”, Zbornik radova 53. konferencije za ETRAN, Vrnjačka Banja, 15-19 jun 2009, str.  MO1.2-1-4.


    21.    Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Ninoslav Stojadinović, Snežana Đorić-Veljković, “Instabilities in p-channel power VDMOSFETs subjected to pulsed negative bias temperature stressing”, Zbornik radova 54. konferencije za ETRAN, Donji Milanovac, 7-10 jun 2010, str. MO1.1-1-4.


    22.    Danijel Danković, Aneta Prijić, Ivica Manić, Vojkan Davidović, Snežana Golubović, Zoran Prijić, Ninoslav Stojadinović, Snežana Đorić-Veljković, “Odredjivanje perioda pouzdanog rada P-kanalnih VDMOS tranzistora snage podvrgnutih kontinualnim i impulsnim  NBT naprezanjima”, Zbornik radova 56. konferencije za ETRAN, Zlatibor, 11-14 jun 2012, str. MO1.1-1-4.


    23.    Snežana Đorić-Veljković, Ivica Manić, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Uticaj odžarivanja na oporavak električno naprezanih VDMOS tranzistora snage”, Zbornik radova 57. konferencije za ETRAN, Zlatibor, 3-6 jun 2013, str. MO1.2-1-6. (nagrada –najbolji rad u stručnoj sekciji MO predloženi za štampu u časopisu).


    24.    Miloš Marjanović, Danijel Danković, Aneta Prijić, Zoran Prijić, Nebojša Janković, Vojkan Davidović, „Modeliranje i PSPICE simulacija NBTI efekata kod VDMOS tranzistora“, Zbornik radova 58. konferencije za ETRAN, Vrnjačka Banja, 2-5 jun 2014, str. MO1.1.1-5. (nagrada –Najbolji rad mladog istraživača na sekciji MO).


    25.    Aleksandar Ilić, Zoran Prijić, Aneta Prijić, Vojkan Davidović, Danijel Danković, Ninoslav Stojadinović, „Mobilna eksperimentalna postavka za odredjivanje napona praga VDMOS tranzistora snage“, Zbornik radova 58. konferencije za ETRAN, Vrnjačka Banja, 2-5 jun 2014, str. MO1.2.1-4.


    26.    Vojkan Davidović, Albena Paskaleva, Dencho Spassov, Elzbieta Guziewicz, Tomasz Krajewski, Snežana Golubović, Snežana Djoric-Veljković, Ivica Manić, Danijel Danković, Ninoslav Stojadinović, “Ispitivanje višeslojnih HfO2/Al2O3struktura za memorijske komponente”, Zbornik radova 61. konferencije za ETRAN, Kladovo, 5-8 Jun 2017, str. MO1.1.1-4. ISBN: 978-86-7466-692-0 (nagrada –Najbolji rad na sekciji MO).


    27.    Vojkan Davidović, Danijel Danković, Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, “Elektrohemijski procesi kod p-kanalnih VDMOS tranzistora snage pri sukcesivnom NBT naprezanju i ozračivanju”, Zbornik radova 62. konferencije za ETRAN, Palić, 11-14 Jun 2018, str. 299-303, ISBN: 978-86-7466-752-1


    28.    Aleksandar Jevtić, Stefan Ilić, Vojkan Davidović,  Zoran Prijić, “Karakterizacija električno programabilnog MOS tranzistora sa plivajućim gejtom”, Zbornik radova 62. konferencije za ETRAN, Palić, 11-14 Jun 2018, str. 304-307, ISBN: 978-86-7466-752-1


    29.    Aleksandar Jevtić, Stefan Ilić, Vojkan Davidović, “Dekapsulacija i analiza EPAD-a”, Zbornik radova IEEESTEC-11th Student Project Conference, Niš, 29 Novembar 2018, str. 329-333. ISBN: 978-86-6125-204-4


    30.    Snežana Đorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović, Ninoslav Stojadinović, “Procedure merenja električnih karakteristika naprezanih p-kanalnih VDMOS tranzistora snage”, Zbornik radova 63. konferencije za ETRAN, Srebrno jezero, 3-6 jun 2019, str.601-604. ISBN:978-86-7466-785-9


    31. Sandra Veljković, Nikola Mitrović, Snežana Đorić-Veljković, Vojkan Davidović, Snežana Golubović, Danijel Danković, “Efekti zračenja i odžarivanja kod naponsko temperaturno naprezanih p-kanalnih VDMOS tranzistora snage”, Zbornik radova 65. konferencije za ETRAN, Etno selo Stanišići, Republika Srpska, 8-10 septembar, 2021, pp 321-325, https://www.etran.rs/2021/wp-content/uploads/2021/11/Zbornik_Proceedings_2021_web.pdf ISBN 978‐86‐7466‐894‐8,
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